JP5944489B2 - 半導体薄膜構造及びその形成方法 - Google Patents
半導体薄膜構造及びその形成方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 207
- 239000004065 semiconductor Substances 0.000 title claims description 145
- 238000000034 method Methods 0.000 title claims description 90
- 239000000758 substrate Substances 0.000 claims description 160
- 150000004767 nitrides Chemical class 0.000 claims description 82
- 239000010408 film Substances 0.000 claims description 21
- 239000002105 nanoparticle Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 9
- 238000000206 photolithography Methods 0.000 claims description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 239000005751 Copper oxide Substances 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 3
- 208000012868 Overgrowth Diseases 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 29
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 28
- 229910052594 sapphire Inorganic materials 0.000 description 19
- 239000010980 sapphire Substances 0.000 description 19
- 230000035882 stress Effects 0.000 description 18
- 239000002243 precursor Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
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- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000348 solid-phase epitaxy Methods 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
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- 230000003287 optical effect Effects 0.000 description 3
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- 239000000843 powder Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- -1 InN Chemical compound 0.000 description 2
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 229950011008 tetrachloroethylene Drugs 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
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- 230000008646 thermal stress Effects 0.000 description 1
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Lasers (AREA)
Description
20 犠牲層パターン
30 無機物薄膜
100 半導体薄膜構造
C 空間
d 犠牲層パターンの厚さ
w 犠牲層パターンの幅
Claims (18)
- 基板上に犠牲層パターンを形成する段階と、
前記犠牲層パターン上に無機物薄膜を形成する段階と、
前記基板及び無機物薄膜で定義される互いに分離された複数の空間が形成されるように、前記無機物薄膜が形成された基板から前記犠牲層パターンを取り除く段階と、
前記基板と無機物薄膜上に窒化物半導体薄膜を形成する段階と、を含み、
前記窒化物半導体薄膜にかかる応力、前記窒化物半導体薄膜からの光抽出量及び放出パターンのうち少なくともいずれか一つを調節するために、前記空間の形状とサイズ、及び2次元的な配列のうち少なくともいずれか一つを調節することを特徴とする半導体薄膜構造の形成方法。 - 前記窒化物半導体薄膜を形成する段階は、前記基板上の前記空間のない部分を土台にして前記窒化物半導体薄膜が形成されるように、ELO(epitaxial lateral overgrowth)方法で行うことを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記無機物薄膜は前記基板と異なる物質であり、前記基板上の前記空間のない部分が露出するように前記無機物薄膜をパターニングする段階をさらに含むことを特徴とする請求項2に記載の半導体薄膜構造の形成方法。
- 前記基板の熱膨脹係数を前記窒化物半導体薄膜に比べて大きく選択し、前記窒化物半導体薄膜を形成する段階以後に冷却させる過程で、前記窒化物半導体薄膜によって前記空間を面方向に圧縮させて前記基板の反りを低減させることを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記基板の熱膨脹係数を前記窒化物半導体薄膜に比べて小さく選択し、前記窒化物半導体薄膜を形成する段階以後に冷却させる過程で、前記窒化物半導体薄膜によって前記空間を面方向に引張って前記基板の反りを低減させることを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記犠牲層パターンを形成する段階は、前記基板上に感光膜を塗布した後でフォトリソグラフィ法で形成することを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記犠牲層パターンを形成する段階は、前記基板上にナノインプリント用樹脂を塗布した後でナノインプリント法で形成することを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記犠牲層パターンを形成する段階は、前記基板上に有機物ナノ粒子を付けて形成することを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記犠牲層パターンの厚さは0.01〜10μmであり、前記犠牲層パターンの幅は0.01〜10μmあることを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記無機物薄膜を形成する段階は、前記犠牲層パターンが変形されない温度限度内で行うことを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記無機物薄膜は、シリカ(SiO2)、アルミナ(Al2O3)、チタニア(TiO2)、ジルコニア(ZrO2)、イットリア(Y2O3)−ジルコニア、酸化銅(CuO、Cu2O)及び酸化タンタル(Ta2O5)のうち少なくともいずれか一つであることを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 基板上に犠牲層パターンを形成する段階と、
前記犠牲層パターン上に無機物薄膜を形成する段階と、
前記基板及び無機物薄膜で定義される互いに分離された複数の空間が形成されるように、前記無機物薄膜が形成された基板から前記犠牲層パターンを取り除く段階と、
前記基板と無機物薄膜上に窒化物半導体薄膜を形成する段階と、を含み、
前記窒化物半導体薄膜にかかる応力を調節するために、前記無機物薄膜の組成、強度及び厚さのうち少なくともいずれか一つを調節することを特徴とする半導体薄膜構造の形成方法。 - 前記空間が制御された形状とサイズ、及び2次元的な配列を持つように定義されるように、前記犠牲層パターンの形状とサイズ、及び2次元的な配列を定めることを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記空間の形状を調節するために、前記犠牲層パターンの形状を調節することを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記犠牲層パターンの形状を変形させるためのリフロー段階をさらに含むことを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記犠牲層パターンは、前記基板全体に同じパターンで均一に形成することを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記犠牲層パターンは、前記基板に局所的に異なるパターンで形成することを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 前記犠牲層パターンを取り除く段階は、加熱、酸素を含むガスとの化学反応、溶媒との化学反応のうち少なくともいずれか一つを用いることを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
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KR1020110047692A KR101235239B1 (ko) | 2011-05-20 | 2011-05-20 | 반도체 박막 구조 및 그 형성 방법 |
KR10-2011-0047692 | 2011-05-20 | ||
PCT/KR2012/003782 WO2012161451A2 (ko) | 2011-05-20 | 2012-05-15 | 반도체 박막 구조 및 그 형성 방법 |
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US (1) | US9793359B2 (ja) |
JP (2) | JP5944489B2 (ja) |
KR (1) | KR101235239B1 (ja) |
CN (1) | CN103608897B (ja) |
DE (1) | DE112012002182B4 (ja) |
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