JP2009102218A - 化合物半導体基板の製造方法 - Google Patents
化合物半導体基板の製造方法 Download PDFInfo
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- JP2009102218A JP2009102218A JP2008190934A JP2008190934A JP2009102218A JP 2009102218 A JP2009102218 A JP 2009102218A JP 2008190934 A JP2008190934 A JP 2008190934A JP 2008190934 A JP2008190934 A JP 2008190934A JP 2009102218 A JP2009102218 A JP 2009102218A
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- compound semiconductor
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- gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
Abstract
【解決手段】基板10上に複数の球形のボール20をコーティングする工程と、球形のボール20がコーティングされた基板上10に化合物半導体エピ層30を成長させつつ、球形のボール20下部にボイド35を形成する工程と、ボイド35に沿って基板10と化合物半導体エピ層30とが自家分離されるように、化合物半導体エピ層30が成長した基板10を冷却させる工程と、を含む化合物半導体基板の製造方法。球形のボール処理により転位減少効果を持つ。また、自家分離を利用するので、基板と化合物半導体エピ層との分離にレーザーリフト・オフ工程を適用しなくてもよい。
【選択図】図3
Description
20 球形のボール
30 化合物半導体エピ層
35、55 ボイド
40 転位
50 第1化合物半導体エピ層
60 第2化合物半導体エピ層
Claims (7)
- 基板上に複数の球形のボールをコーティングする工程と、
前記球形のボールがコーティングされた基板上に化合物半導体エピ層を成長させつつ、前記球形のボール下部にボイドを形成する工程と、
前記ボイドに沿って前記基板と前記化合物半導体エピ層とが自家分離されるように、前記化合物半導体エピ層が成長した基板を冷却させる工程と、を含む化合物半導体基板の製造方法。 - 前記冷却する工程以後に前記球形のボールを除去する工程をさらに含むことを特徴とする請求項1に記載の化合物半導体基板の製造方法。
- 基板上に複数の球形のボールをコーティングする工程と、
前記球形のボールがコーティングされた基板上に前記球形のボールサイズより小さな厚さに第1化合物半導体エピ層を成長させる工程と、
前記第1化合物半導体エピ層が成長した基板から前記球形のボールを除去してボイドを形成する工程と、
前記ボイドを含有する前記第1化合物半導体エピ層上に第2化合物半導体エピ層を成長させる工程と、
前記ボイドに沿って前記第2化合物半導体エピ層と前記第1化合物半導体エピ層とが自家分離されるように、前記第1及び第2化合物半導体エピ層が成長した基板を冷却させる工程と、を含む化合物半導体基板の製造方法。 - 前記球形のボールは、シリカボール、サファイアボール、ジルコニアボールまたはイットリア−ジルコニアボールであることを特徴とする請求項1ないし3のうちいずれか一項に記載の化合物半導体基板の製造方法。
- 前記球形のボールはシリカボールであり、前記球形のボールは化学的エッチングにより除去することを特徴とする請求項2または3に記載の化合物半導体基板の製造方法。
- 前記化合物半導体は、窒化ガリウム(GaN)、窒化アルミニウム(AlN)、窒化インジウム(InN)、またはこれらの組み合わせ(Ga1−xAl1−yIn1−zN,0≦x,y,z≦1)を含むことを特徴とする請求項1ないし3のうちいずれか一項に記載の化合物半導体基板の製造方法。
- 前記基板は、サファイア、SiC、またはシリコンからなることを特徴とする請求項1ないし3のうちいずれか一項に記載の化合物半導体基板の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070107090A KR100921789B1 (ko) | 2007-10-24 | 2007-10-24 | 화합물 반도체 기판 제조 방법 |
Publications (1)
Publication Number | Publication Date |
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JP2009102218A true JP2009102218A (ja) | 2009-05-14 |
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ID=40130585
Family Applications (1)
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JP2008190934A Pending JP2009102218A (ja) | 2007-10-24 | 2008-07-24 | 化合物半導体基板の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7816241B2 (ja) |
EP (2) | EP2333817B1 (ja) |
JP (1) | JP2009102218A (ja) |
KR (1) | KR100921789B1 (ja) |
CN (1) | CN101436531B (ja) |
TW (1) | TWI442454B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012206927A (ja) * | 2011-03-29 | 2012-10-25 | Qinghua Univ | エピタキシャル構造体の製造方法 |
JP2018111644A (ja) * | 2014-08-12 | 2018-07-19 | Tdk株式会社 | アルミナ基板の製造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7776152B2 (en) * | 2006-11-01 | 2010-08-17 | Raytheon Company | Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth |
KR101101780B1 (ko) * | 2008-09-08 | 2012-01-05 | 서울대학교산학협력단 | 질화물 박막 구조 및 그 형성 방법 |
US8680510B2 (en) | 2010-06-28 | 2014-03-25 | International Business Machines Corporation | Method of forming compound semiconductor |
US20150087137A1 (en) * | 2011-03-07 | 2015-03-26 | Snu R&Db Foundation | Nitride thin film stucture and method of forming the same |
CN102817074B (zh) * | 2012-07-23 | 2015-09-30 | 北京燕园中镓半导体工程研发中心有限公司 | 基于原位应力控制的iii族氮化物厚膜自分离方法 |
CN104603959B (zh) * | 2013-08-21 | 2017-07-04 | 夏普株式会社 | 氮化物半导体发光元件 |
KR102099877B1 (ko) | 2013-11-05 | 2020-04-10 | 삼성전자 주식회사 | 질화물 반도체 디바이스의 제조 방법 |
KR101636140B1 (ko) * | 2014-08-22 | 2016-07-07 | 한양대학교 산학협력단 | 발광 소자 및 그 제조 방법 |
JP6503819B2 (ja) * | 2015-03-23 | 2019-04-24 | Tdk株式会社 | アルミナ基板 |
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2007
- 2007-10-24 KR KR1020070107090A patent/KR100921789B1/ko active IP Right Grant
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2008
- 2008-07-18 EP EP11002687.9A patent/EP2333817B1/en active Active
- 2008-07-18 EP EP08013037A patent/EP2053637A3/en not_active Withdrawn
- 2008-07-23 US US12/177,917 patent/US7816241B2/en active Active
- 2008-07-24 JP JP2008190934A patent/JP2009102218A/ja active Pending
- 2008-09-26 CN CN2008102114942A patent/CN101436531B/zh not_active Expired - Fee Related
- 2008-10-07 TW TW097138559A patent/TWI442454B/zh active
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2010
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JP2003178984A (ja) * | 2001-03-27 | 2003-06-27 | Nec Corp | Iii族窒化物半導体基板およびその製造方法 |
JP2006253628A (ja) * | 2005-03-09 | 2006-09-21 | Siltron Inc | 化合物半導体装置及びその製造方法 |
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JP2012206927A (ja) * | 2011-03-29 | 2012-10-25 | Qinghua Univ | エピタキシャル構造体の製造方法 |
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Also Published As
Publication number | Publication date |
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TWI442454B (zh) | 2014-06-21 |
EP2053637A3 (en) | 2010-04-28 |
CN101436531A (zh) | 2009-05-20 |
EP2333817A2 (en) | 2011-06-15 |
US20090111250A1 (en) | 2009-04-30 |
TW200919551A (en) | 2009-05-01 |
US8158496B2 (en) | 2012-04-17 |
US20100330784A1 (en) | 2010-12-30 |
CN101436531B (zh) | 2012-07-04 |
EP2053637A2 (en) | 2009-04-29 |
KR100921789B1 (ko) | 2009-10-15 |
KR20090041536A (ko) | 2009-04-29 |
EP2333817B1 (en) | 2015-04-15 |
US7816241B2 (en) | 2010-10-19 |
EP2333817A3 (en) | 2012-05-23 |
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