JP5244487B2 - 窒化ガリウム成長用基板及び窒化ガリウム基板の製造方法 - Google Patents
窒化ガリウム成長用基板及び窒化ガリウム基板の製造方法 Download PDFInfo
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- JP5244487B2 JP5244487B2 JP2008190935A JP2008190935A JP5244487B2 JP 5244487 B2 JP5244487 B2 JP 5244487B2 JP 2008190935 A JP2008190935 A JP 2008190935A JP 2008190935 A JP2008190935 A JP 2008190935A JP 5244487 B2 JP5244487 B2 JP 5244487B2
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- 239000000758 substrate Substances 0.000 title claims description 91
- 229910002601 GaN Inorganic materials 0.000 title claims description 87
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 87
- 238000000034 method Methods 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 230000008569 process Effects 0.000 claims description 24
- 238000004140 cleaning Methods 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 11
- 238000011065 in-situ storage Methods 0.000 claims description 8
- 208000012868 Overgrowth Diseases 0.000 claims description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 239000013078 crystal Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101000661807 Homo sapiens Suppressor of tumorigenicity 14 protein Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101000661808 Mus musculus Suppressor of tumorigenicity 14 protein homolog Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 102100037942 Suppressor of tumorigenicity 14 protein Human genes 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Description
30 マイクロマスク
40 窒化ガリウム層
Claims (5)
- シリコン基板の表面をサーマルクリーニングする工程と、
前記基板の表面にインサイチュ方式のSi3N4マイクロマスクを形成する工程であり、
前記基板の表面にNH 3 を供給してSi 3 N 4 層を形成する工程と、
前記基板の表面にH 2 を供給して前記Si 3 N 4 層を部分的にエッチングする工程と
を含む、マイクロマスクを形成する工程と、
前記マイクロマスクの開口部を通じるエピタキシャル横方向過度成長(ELO)方法で窒化ガリウム層を成長させる工程と、を含むことを特徴とする窒化ガリウム成長用基板の製造方法。 - 前記サーマルクリーニングする工程は、前記基板の表面の自然酸化膜を除去する工程であることを特徴とする請求項1に記載の窒化ガリウム成長用基板の製造方法。
- 前記マイクロマスクを形成する工程の工程温度は900〜1100℃であることを特徴とする請求項1又は2に記載の窒化ガリウム成長用基板の製造方法。
- 前記窒化ガリウム層を成長させる工程は、
前記基板の表面にGaを含むMOソースを供給する工程と、
前記基板の表面に窒素含有ガスを供給する工程と、を含むことを特徴とする請求項1乃至3の何れか一項に記載の窒化ガリウム成長用基板の製造方法。 - シリコン基板の表面をサーマルクリーニングする工程と、
前記基板の表面にインサイチュ方式のSi3N4マイクロマスクを形成する工程であり、
前記基板の表面にNH 3 を供給してSi 3 N 4 層を形成する工程と、
前記基板の表面にH 2 を供給して前記Si 3 N 4 層を部分的にエッチングする工程と
を含む、マイクロマスクを形成する工程と、
前記マイクロマスクの開口部を通じるエピタキシャル横方向過度成長(ELO)方法で窒化ガリウム層を成長させる工程と、
前記窒化ガリウム層の成長を中止して成長炉から基板付着窒化ガリウム層を取り出して、前記基板及びマイクロマスクを除去して窒化ガリウム基板を得る工程と、を含むことを特徴とする窒化ガリウム基板の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0091899 | 2007-09-11 | ||
KR1020070091899A KR100901822B1 (ko) | 2007-09-11 | 2007-09-11 | 질화갈륨 성장용 기판 및 질화갈륨 기판 제조 방법 |
Publications (2)
Publication Number | Publication Date |
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JP2009071279A JP2009071279A (ja) | 2009-04-02 |
JP5244487B2 true JP5244487B2 (ja) | 2013-07-24 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2008190935A Active JP5244487B2 (ja) | 2007-09-11 | 2008-07-24 | 窒化ガリウム成長用基板及び窒化ガリウム基板の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7708832B2 (ja) |
EP (1) | EP2037013B1 (ja) |
JP (1) | JP5244487B2 (ja) |
KR (1) | KR100901822B1 (ja) |
CN (1) | CN101388338B (ja) |
TW (1) | TWI426162B (ja) |
Families Citing this family (14)
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FI105969B (fi) * | 1998-08-10 | 2000-10-31 | Nokia Networks Oy | Palvelunlaadun hallinta matkaviestinjärjestelmässä |
CN101877377B (zh) | 2009-04-30 | 2011-12-14 | 比亚迪股份有限公司 | 一种分立发光二极管的外延片及其制造方法 |
TWI458109B (zh) * | 2010-10-27 | 2014-10-21 | Just Innovation Corp | 紫外光檢測器的製造方法 |
US20120119184A1 (en) * | 2010-11-12 | 2012-05-17 | Kung-Hsieh Hsu | Vertical Light Emitting Diode (VLED) Die Having N-Type Confinement Structure With Etch Stop Layer And Method Of Fabrication |
US20130026480A1 (en) * | 2011-07-25 | 2013-01-31 | Bridgelux, Inc. | Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow |
KR101843513B1 (ko) * | 2012-02-24 | 2018-03-29 | 서울바이오시스 주식회사 | 질화갈륨계 발광 다이오드 |
JP6155866B2 (ja) * | 2012-07-10 | 2017-07-05 | 日立金属株式会社 | 高融点材料単結晶基板への識別マークの形成方法、及び高融点材料単結晶基板 |
US10262855B2 (en) | 2014-12-22 | 2019-04-16 | Globalwafers Co., Ltd. | Manufacture of Group IIIA-nitride layers on semiconductor on insulator structures |
US9917156B1 (en) | 2016-09-02 | 2018-03-13 | IQE, plc | Nucleation layer for growth of III-nitride structures |
KR102680861B1 (ko) * | 2016-12-15 | 2024-07-03 | 삼성전자주식회사 | 질화 갈륨 기판의 제조 방법 |
CN108977887B (zh) * | 2018-07-20 | 2023-11-17 | 深圳市科创数字显示技术有限公司 | 单晶氮化铟的生长方法 |
CN109524293B (zh) * | 2018-10-30 | 2021-10-19 | 江苏晶曌半导体有限公司 | 一种SiC衬底上生长高质量GaN外延膜的方法 |
CN109599462A (zh) * | 2018-11-30 | 2019-04-09 | 中国科学院半导体研究所 | 基于Si衬底的N极性面富In组分氮化物材料生长方法 |
CN112864001B (zh) * | 2020-12-31 | 2024-08-16 | 镓特半导体科技(上海)有限公司 | 半导体结构、自支撑氮化镓层及其制备方法 |
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JP3473063B2 (ja) * | 1993-11-15 | 2003-12-02 | 松下電器産業株式会社 | シリコン基板の洗浄方法 |
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US5616513A (en) * | 1995-06-01 | 1997-04-01 | International Business Machines Corporation | Shallow trench isolation with self aligned PSG layer |
US5872045A (en) * | 1997-07-14 | 1999-02-16 | Industrial Technology Research Institute | Method for making an improved global planarization surface by using a gradient-doped polysilicon trench--fill in shallow trench isolation |
US7118929B2 (en) * | 2000-07-07 | 2006-10-10 | Lumilog | Process for producing an epitaxial layer of gallium nitride |
KR100290852B1 (ko) * | 1999-04-29 | 2001-05-15 | 구자홍 | 에칭 방법 |
JP3555500B2 (ja) * | 1999-05-21 | 2004-08-18 | 豊田合成株式会社 | Iii族窒化物半導体及びその製造方法 |
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2007
- 2007-09-11 KR KR1020070091899A patent/KR100901822B1/ko active IP Right Grant
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2008
- 2008-07-18 EP EP08013036.2A patent/EP2037013B1/en active Active
- 2008-07-22 US US12/177,490 patent/US7708832B2/en active Active
- 2008-07-24 JP JP2008190935A patent/JP5244487B2/ja active Active
- 2008-09-08 TW TW097134450A patent/TWI426162B/zh active
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TWI426162B (zh) | 2014-02-11 |
CN101388338B (zh) | 2013-03-06 |
EP2037013A2 (en) | 2009-03-18 |
CN101388338A (zh) | 2009-03-18 |
JP2009071279A (ja) | 2009-04-02 |
EP2037013A3 (en) | 2009-10-07 |
EP2037013B1 (en) | 2014-08-20 |
TW200912054A (en) | 2009-03-16 |
US7708832B2 (en) | 2010-05-04 |
KR100901822B1 (ko) | 2009-06-09 |
US20090068822A1 (en) | 2009-03-12 |
KR20090026857A (ko) | 2009-03-16 |
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