JP6219905B2 - 半導体薄膜構造及びその形成方法 - Google Patents
半導体薄膜構造及びその形成方法 Download PDFInfo
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- JP6219905B2 JP6219905B2 JP2015220153A JP2015220153A JP6219905B2 JP 6219905 B2 JP6219905 B2 JP 6219905B2 JP 2015220153 A JP2015220153 A JP 2015220153A JP 2015220153 A JP2015220153 A JP 2015220153A JP 6219905 B2 JP6219905 B2 JP 6219905B2
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- 239000010409 thin film Substances 0.000 title claims description 178
- 239000004065 semiconductor Substances 0.000 title claims description 122
- 238000000034 method Methods 0.000 title claims description 69
- 239000000758 substrate Substances 0.000 claims description 154
- 150000004767 nitrides Chemical class 0.000 claims description 72
- 239000010408 film Substances 0.000 claims description 22
- 229910052594 sapphire Inorganic materials 0.000 claims description 20
- 239000010980 sapphire Substances 0.000 claims description 20
- 239000002105 nanoparticle Substances 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- 238000000348 solid-phase epitaxy Methods 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 description 29
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 28
- 230000035882 stress Effects 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 2
- -1 InN Chemical compound 0.000 description 2
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 229950011008 tetrachloroethylene Drugs 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
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- 239000002245 particle Substances 0.000 description 1
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- 239000004038 photonic crystal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
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- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Description
20 犠牲層パターン
30 無機物薄膜
100 半導体薄膜構造
C 空間
d 犠牲層パターンの厚さ
w 犠牲層パターンの幅
Claims (5)
- 基板上に犠牲層パターンを形成する段階と、
前記犠牲層パターン上に、非晶質または多結晶であり、少なくとも一部は前記基板に直接接触する無機物薄膜を形成して、前記基板、前記犠牲層パターンおよび前記無機物薄膜を備える半導体薄膜前駆体構造を形成する段階と、
前記犠牲層パターンを取り除き、該犠牲層パターンの取り除かれた箇所に空間(cavity)を形成し、固相エピタキシャル成長(solid phase epitaxy)法で前記無機物薄膜のうち前記基板に直接接触している部分が前記基板の結晶方向に沿って結晶化するようにする段階と、を含む半導体薄膜構造の形成方法。 - 前記基板上に窒化物半導体薄膜を形成する段階をさらに含み、前記窒化物半導体薄膜にかかる応力、前記窒化物半導体薄膜からの光抽出量及び放出パターンのうち少なくともいずれか一つを調節するために、前記空間の形状とサイズ、及び2次元的な配列のうち少なくともいずれか一つを調節することを特徴とする請求項1に記載の半導体薄膜構造の形成方法。
- 基板と、
前記基板上に形成された犠牲層パターンと、
前記犠牲層パターン上に、前記基板との間に互いに分離された複数の空間(cavity)が制御された形状とサイズ、及び2次元的な配列を持つように定義されるように、前記基板上に形成された無機物薄膜と、を備え、
前記無機物薄膜の少なくとも一部は、前記基板に直接接触し、
前記犠牲層パターンの少なくとも一部は、前記基板に直接接触し、
前記無機物薄膜のうち前記基板に直接接触している部分は、前記基板の結
晶方向に沿って結晶化している、
半導体薄膜前駆体構造。 - 前記基板はサファイアであり、前記無機物薄膜はAl2O3であることを特徴とする請求項3に記載の半導体薄膜前駆体構造。
- 前記犠牲層パターンは、感光膜、ナノインプリント樹脂または有機物ナノ粒子であることを特徴とする請求項3に記載の半導体薄膜前駆体構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020110047692A KR101235239B1 (ko) | 2011-05-20 | 2011-05-20 | 반도체 박막 구조 및 그 형성 방법 |
KR10-2011-0047692 | 2011-05-20 |
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JP2014509253A Division JP5944489B2 (ja) | 2011-05-20 | 2012-05-15 | 半導体薄膜構造及びその形成方法 |
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JP2016074596A JP2016074596A (ja) | 2016-05-12 |
JP6219905B2 true JP6219905B2 (ja) | 2017-10-25 |
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JP2014509253A Active JP5944489B2 (ja) | 2011-05-20 | 2012-05-15 | 半導体薄膜構造及びその形成方法 |
JP2015220153A Active JP6219905B2 (ja) | 2011-05-20 | 2015-11-10 | 半導体薄膜構造及びその形成方法 |
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Country Status (7)
Country | Link |
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US (1) | US9793359B2 (ja) |
JP (2) | JP5944489B2 (ja) |
KR (1) | KR101235239B1 (ja) |
CN (1) | CN103608897B (ja) |
DE (1) | DE112012002182B4 (ja) |
TW (1) | TWI557939B (ja) |
WO (1) | WO2012161451A2 (ja) |
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KR101547546B1 (ko) * | 2013-09-17 | 2015-08-28 | 서울대학교산학협력단 | 박막 구조체 및 그 제조방법 |
KR101557083B1 (ko) * | 2013-10-07 | 2015-10-05 | 주식회사 헥사솔루션 | 반도체 적층 구조 및 그 형성 방법 |
KR20150086127A (ko) | 2014-01-17 | 2015-07-27 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR101590475B1 (ko) * | 2014-07-10 | 2016-02-01 | 주식회사 헥사솔루션 | 반도체 적층 구조 및 그 형성 방법 |
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KR20160008382A (ko) | 2014-07-14 | 2016-01-22 | 서울대학교산학협력단 | 반도체 적층 구조, 이를 이용한 질화물 반도체층 분리방법 및 장치 |
TWI550921B (zh) | 2014-07-17 | 2016-09-21 | 嘉晶電子股份有限公司 | 氮化物半導體結構 |
CN105428481B (zh) * | 2015-12-14 | 2018-03-16 | 厦门市三安光电科技有限公司 | 氮化物底层及其制作方法 |
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KR101809252B1 (ko) | 2017-02-24 | 2017-12-14 | 서울대학교산학협력단 | 반도체 적층 구조, 이를 이용한 질화물 반도체층 분리방법 및 장치 |
CN110710072B (zh) * | 2017-04-12 | 2022-07-22 | 感应光子公司 | 具有结合光束转向的超小型垂直腔表面发射激光发射器的器件 |
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JP3631724B2 (ja) * | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Iii族窒化物半導体基板およびその製造方法 |
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FR2895419B1 (fr) | 2005-12-27 | 2008-02-22 | Commissariat Energie Atomique | Procede de realisation simplifiee d'une structure epitaxiee |
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JP5396911B2 (ja) | 2009-02-25 | 2014-01-22 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
WO2010123165A1 (en) * | 2009-04-24 | 2010-10-28 | Snu R&Db Foundation | Method of fabricating substrate where patterns are formed |
KR101154596B1 (ko) * | 2009-05-21 | 2012-06-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
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KR20120129439A (ko) | 2012-11-28 |
DE112012002182T8 (de) | 2014-04-10 |
DE112012002182T5 (de) | 2014-02-13 |
KR101235239B1 (ko) | 2013-02-21 |
WO2012161451A3 (ko) | 2013-03-21 |
WO2012161451A2 (ko) | 2012-11-29 |
CN103608897B (zh) | 2017-10-31 |
US20140070372A1 (en) | 2014-03-13 |
TW201251111A (en) | 2012-12-16 |
CN103608897A (zh) | 2014-02-26 |
JP2014519188A (ja) | 2014-08-07 |
WO2012161451A9 (ko) | 2013-05-16 |
TWI557939B (zh) | 2016-11-11 |
JP2016074596A (ja) | 2016-05-12 |
US9793359B2 (en) | 2017-10-17 |
DE112012002182B4 (de) | 2023-07-27 |
JP5944489B2 (ja) | 2016-07-05 |
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