DE102012212611A8 - Halbleiterpackung und Verfahren zur Herstellung derselben - Google Patents

Halbleiterpackung und Verfahren zur Herstellung derselben Download PDF

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Publication number
DE102012212611A8
DE102012212611A8 DE102012212611A DE102012212611A DE102012212611A8 DE 102012212611 A8 DE102012212611 A8 DE 102012212611A8 DE 102012212611 A DE102012212611 A DE 102012212611A DE 102012212611 A DE102012212611 A DE 102012212611A DE 102012212611 A8 DE102012212611 A8 DE 102012212611A8
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making
same
semiconductor package
package
semiconductor
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DE102012212611A
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DE102012212611A1 (de
Inventor
YoungLyong KIM
Taehoon Kim
ChulYong JANG
Jongho Lee
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR1020120029739A external-priority patent/KR101936788B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE102012212611A1 publication Critical patent/DE102012212611A1/de
Publication of DE102012212611A8 publication Critical patent/DE102012212611A8/de
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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    • H01L2924/181Encapsulation
DE102012212611A 2011-07-18 2012-07-18 Halbleiterpackung und Verfahren zur Herstellung derselben Withdrawn DE102012212611A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20110071016 2011-07-18
KR10-2011-0071016 2011-07-18
KR1020120029739A KR101936788B1 (ko) 2011-07-18 2012-03-23 반도체 패키지 및 그 제조 방법
KR10-2012-0029739 2012-03-23

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DE102012212611A1 DE102012212611A1 (de) 2013-03-07
DE102012212611A8 true DE102012212611A8 (de) 2013-05-08

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US (2) US8970046B2 (de)
JP (1) JP2013026625A (de)
CN (1) CN102891136B (de)
DE (1) DE102012212611A1 (de)

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CN104409448A (zh) * 2014-11-21 2015-03-11 三星半导体(中国)研究开发有限公司 半导体封装及其制造方法
JP6560496B2 (ja) * 2015-01-26 2019-08-14 株式会社ジェイデバイス 半導体装置
US10486548B2 (en) * 2016-01-13 2019-11-26 Ford Global Technologies, Llc Power inverter for a vehicle
US9875993B2 (en) 2016-01-14 2018-01-23 Micron Technology, Inc. Semiconductor devices with duplicated die bond pads and associated device packages and methods of manufacture
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