DE112014005954A5 - Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils - Google Patents

Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils Download PDF

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Publication number
DE112014005954A5
DE112014005954A5 DE112014005954.4T DE112014005954T DE112014005954A5 DE 112014005954 A5 DE112014005954 A5 DE 112014005954A5 DE 112014005954 T DE112014005954 T DE 112014005954T DE 112014005954 A5 DE112014005954 A5 DE 112014005954A5
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DE
Germany
Prior art keywords
semiconductor component
optoelectronic semiconductor
producing
optoelectronic
component
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Application number
DE112014005954.4T
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English (en)
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DE112014005954B4 (de
Inventor
Martin Mandl
Tilman Schimpke
Ion Stoll
Barbara Huckenbeck
Dr. Zwaschka Franz
Martin Strassburg
Daniel Bichler
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
DE112014005954.4T 2013-12-19 2014-12-18 Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils Active DE112014005954B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102013114466.7 2013-12-19
DE102013114466.7A DE102013114466A1 (de) 2013-12-19 2013-12-19 Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
PCT/EP2014/078404 WO2015091754A1 (de) 2013-12-19 2014-12-18 Optoelektronisches halbleiterbauteil und verfahren zur herstellung eines optoelektronischen halbleiterbauteils

Publications (2)

Publication Number Publication Date
DE112014005954A5 true DE112014005954A5 (de) 2016-09-29
DE112014005954B4 DE112014005954B4 (de) 2022-03-31

Family

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Family Applications (2)

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DE102013114466.7A Withdrawn DE102013114466A1 (de) 2013-12-19 2013-12-19 Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE112014005954.4T Active DE112014005954B4 (de) 2013-12-19 2014-12-18 Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils

Family Applications Before (1)

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DE102013114466.7A Withdrawn DE102013114466A1 (de) 2013-12-19 2013-12-19 Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils

Country Status (3)

Country Link
US (1) US9966503B2 (de)
DE (2) DE102013114466A1 (de)
WO (1) WO2015091754A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3015772B1 (fr) * 2013-12-19 2017-10-13 Aledia Dispositif optoelectronique a diodes electroluminescentes a extraction de lumiere amelioree
DE102014117803A1 (de) * 2014-12-03 2016-06-09 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Leuchtdiode
DE102014117892A1 (de) 2014-12-04 2016-06-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement sowie optoelektronisches Bauteil
DE102014117995A1 (de) 2014-12-05 2016-06-09 Osram Opto Semiconductors Gmbh Halbleiterschichtenfolge zur Erzeugung von sichtbarem Licht und Leuchtdiode
DE102016102876A1 (de) 2016-02-18 2017-08-24 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102016104616B4 (de) 2016-03-14 2021-09-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlichtquelle
DE102016117189A1 (de) 2016-09-13 2018-03-15 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
FR3055944B1 (fr) * 2016-09-15 2020-11-13 Valeo Vision Conversion lumineuse pour une source lumineuse de haute resolution
FR3058572A1 (fr) * 2016-11-10 2018-05-11 Valeo Vision Module d'emission lumineuse a batonnets electroluminescents ameliore, notamment pour vehicule automobile
FR3061607B1 (fr) * 2016-12-29 2019-05-31 Aledia Dispositif optoelectronique a diodes electroluminescentes
US10923635B2 (en) * 2016-12-30 2021-02-16 Lumileds Llc Phosphor deposition system for LEDs
EP3352228B1 (de) 2017-01-24 2019-09-25 OSRAM Opto Semiconductors GmbH Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
WO2018170531A1 (en) * 2017-03-21 2018-09-27 Newsouth Innovations Pty Ltd A light emitting device
US10451751B2 (en) * 2017-06-19 2019-10-22 Ohio State Innovation Foundation Charge generating devices and methods of making and use thereof
DE102017113741A1 (de) 2017-06-21 2018-12-27 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
KR20200088948A (ko) * 2019-01-15 2020-07-24 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
US12055737B2 (en) * 2022-05-18 2024-08-06 GE Precision Healthcare LLC Aligned and stacked high-aspect ratio metallized structures

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DE102006024165A1 (de) * 2006-05-23 2007-11-29 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
EP2080235B1 (de) * 2006-10-12 2013-12-04 Panasonic Corporation Lichtemittierendes Bauelement
JP5158472B2 (ja) * 2007-05-24 2013-03-06 スタンレー電気株式会社 半導体発光装置
KR100973238B1 (ko) * 2008-03-26 2010-07-30 서울반도체 주식회사 형광체 코팅방법 및 장치 그리고 형광체 코팅층을 포함하는ｌｅｄ
CN103022282B (zh) * 2008-07-07 2016-02-03 格罗有限公司 纳米结构led
US20110220920A1 (en) * 2010-03-09 2011-09-15 Brian Thomas Collins Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices
DE102010051286A1 (de) * 2010-11-12 2012-05-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
US20120205695A1 (en) * 2011-02-16 2012-08-16 Tzu-Han Lin Light-emitting diode device
CN102916095A (zh) 2011-07-31 2013-02-06 华新丽华股份有限公司 发光二极管
DE102011111980A1 (de) 2011-08-29 2013-02-28 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Leuchtdiode und Leuchtdiode
DE102011113962B4 (de) * 2011-09-21 2024-02-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines keramischen Konversionselements
DE102011085645B4 (de) 2011-11-03 2014-06-26 Osram Gmbh Leuchtdiodenmodul und Verfahren zum Betreiben eines Leuchtdiodenmoduls
US9444024B2 (en) * 2011-11-10 2016-09-13 Cree, Inc. Methods of forming optical conversion material caps
TW201320406A (zh) * 2011-11-11 2013-05-16 Unity Opto Technology Co Ltd 提升混光效果之白光二極體封裝改良結構
DE102012101718A1 (de) 2012-03-01 2013-09-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
AT13372U1 (de) * 2012-04-30 2013-11-15 Tridonic Jennersdorf Gmbh LED-Modul mit hoher Lichtstromdichte
DE102012104035A1 (de) 2012-05-08 2013-11-14 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauelements und derart hergestelltes Halbleiterbauelement
DE102012105691B4 (de) 2012-06-28 2018-10-25 Osram Opto Semiconductors Gmbh Verfahren zur Abscheidung einer elektrophoretisch abgeschiedenen partikulären Schicht, strahlungsemittierendes Halbleiterbauelement und optisches Element
DE102013100291B4 (de) 2013-01-11 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US8916896B2 (en) * 2013-02-22 2014-12-23 Cree, Inc. Light emitter components and methods having improved performance

Also Published As

Publication number Publication date
DE112014005954B4 (de) 2022-03-31
US20160300983A1 (en) 2016-10-13
US9966503B2 (en) 2018-05-08
DE102013114466A1 (de) 2015-06-25
WO2015091754A1 (de) 2015-06-25

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