DE112016000691A5 - Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements - Google Patents

Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements Download PDF

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Publication number
DE112016000691A5
DE112016000691A5 DE112016000691.8T DE112016000691T DE112016000691A5 DE 112016000691 A5 DE112016000691 A5 DE 112016000691A5 DE 112016000691 T DE112016000691 T DE 112016000691T DE 112016000691 A5 DE112016000691 A5 DE 112016000691A5
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Prior art keywords
semiconductor component
optoelectronic semiconductor
producing
optoelectronic
component
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Application number
DE112016000691.8T
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English (en)
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DE112016000691B4 (de
Inventor
Thomas Lehnhardt
Martin Mandl
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
DE112016000691.8T 2015-02-10 2016-01-11 Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements Active DE112016000691B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015101888.8 2015-02-10
DE102015101888.8A DE102015101888A1 (de) 2015-02-10 2015-02-10 Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
PCT/EP2016/050388 WO2016128158A1 (de) 2015-02-10 2016-01-11 Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements

Publications (2)

Publication Number Publication Date
DE112016000691A5 true DE112016000691A5 (de) 2017-11-16
DE112016000691B4 DE112016000691B4 (de) 2023-11-16

Family

ID=55083424

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102015101888.8A Withdrawn DE102015101888A1 (de) 2015-02-10 2015-02-10 Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE112016000691.8T Active DE112016000691B4 (de) 2015-02-10 2016-01-11 Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102015101888.8A Withdrawn DE102015101888A1 (de) 2015-02-10 2015-02-10 Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

Country Status (3)

Country Link
US (1) US10497830B2 (de)
DE (2) DE102015101888A1 (de)
WO (1) WO2016128158A1 (de)

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US11961875B2 (en) 2017-12-20 2024-04-16 Lumileds Llc Monolithic segmented LED array architecture with islanded epitaxial growth
US20190198720A1 (en) 2017-12-22 2019-06-27 Lumileds Llc Particle systems and patterning for monolithic led arrays
EP3782187A1 (de) 2018-04-16 2021-02-24 Lumileds Holding B.V. Effiziente weisslampe für fahrzeugscheinwerfer
US10964845B2 (en) 2018-09-27 2021-03-30 Lumileds Llc Micro light emitting devices
US10923628B2 (en) 2018-09-27 2021-02-16 Lumileds Llc Micrometer scale light emitting diode displays on patterned templates and substrates
US11271033B2 (en) 2018-09-27 2022-03-08 Lumileds Llc Micro light emitting devices
US10811460B2 (en) 2018-09-27 2020-10-20 Lumileds Holding B.V. Micrometer scale light emitting diode displays on patterned templates and substrates
US11923398B2 (en) 2019-12-23 2024-03-05 Lumileds Llc III-nitride multi-wavelength LED arrays
US11404473B2 (en) 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays
US11848402B2 (en) 2020-03-11 2023-12-19 Lumileds Llc Light emitting diode devices with multilayer composite film including current spreading layer
US11942507B2 (en) 2020-03-11 2024-03-26 Lumileds Llc Light emitting diode devices
US11735695B2 (en) 2020-03-11 2023-08-22 Lumileds Llc Light emitting diode devices with current spreading layer
US11569415B2 (en) 2020-03-11 2023-01-31 Lumileds Llc Light emitting diode devices with defined hard mask opening
US11901491B2 (en) 2020-10-29 2024-02-13 Lumileds Llc Light emitting diode devices
US11626538B2 (en) 2020-10-29 2023-04-11 Lumileds Llc Light emitting diode device with tunable emission
US11631786B2 (en) 2020-11-12 2023-04-18 Lumileds Llc III-nitride multi-wavelength LED arrays with etch stop layer
US11955583B2 (en) 2020-12-01 2024-04-09 Lumileds Llc Flip chip micro light emitting diodes
US11705534B2 (en) 2020-12-01 2023-07-18 Lumileds Llc Methods of making flip chip micro light emitting diodes
US11600656B2 (en) 2020-12-14 2023-03-07 Lumileds Llc Light emitting diode device
US11935987B2 (en) 2021-11-03 2024-03-19 Lumileds Llc Light emitting diode arrays with a light-emitting pixel area

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US5231049A (en) * 1990-11-05 1993-07-27 California Institute Of Technology Method of manufacturing a distributed light emitting diode flat-screen display for use in televisions
US6780696B1 (en) * 2000-09-12 2004-08-24 Alien Technology Corporation Method and apparatus for self-assembly of functional blocks on a substrate facilitated by electrode pairs
US7427782B2 (en) 2004-03-29 2008-09-23 Articulated Technologies, Llc Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
US8889216B2 (en) * 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US8872214B2 (en) * 2009-10-19 2014-10-28 Sharp Kabushiki Kaisha Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device
KR101244926B1 (ko) * 2011-04-28 2013-03-18 피에스아이 주식회사 초소형 ｌｅｄ 소자 및 그 제조방법
KR101209449B1 (ko) * 2011-04-29 2012-12-07 피에스아이 주식회사 풀－칼라 ｌｅｄ 디스플레이 장치 및 그 제조방법
US20150249069A1 (en) 2012-09-25 2015-09-03 Sharp Kabushiki Kaisha Display device and method for manufacturing display device
US9548411B2 (en) 2013-03-15 2017-01-17 Sandia Corporation Photoelectrochemically driven self-assembly method
DE102014107167B4 (de) 2014-05-21 2022-04-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiterbauelements mit einer Strukturschicht mit einer Mehrzahl von dreidimensionalen Strukturelementen und strahlungsemittierendes Halbleiterbauelement mit einer Strukturschicht mit einer Mehrzahl von dreidimensionalen Strukturelementen

Also Published As

Publication number Publication date
DE102015101888A1 (de) 2016-08-11
DE112016000691B4 (de) 2023-11-16
DE102015101888A9 (de) 2016-10-06
US10497830B2 (en) 2019-12-03
WO2016128158A1 (de) 2016-08-18
US20180019373A1 (en) 2018-01-18

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