DE112018001984A5 - Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement - Google Patents

Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement Download PDF

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Publication number
DE112018001984A5
DE112018001984A5 DE112018001984.5T DE112018001984T DE112018001984A5 DE 112018001984 A5 DE112018001984 A5 DE 112018001984A5 DE 112018001984 T DE112018001984 T DE 112018001984T DE 112018001984 A5 DE112018001984 A5 DE 112018001984A5
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Prior art keywords
optoelectronic component
producing
optoelectronic
component
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Granted
Application number
DE112018001984.5T
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English (en)
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DE112018001984B4 (de
Inventor
Britta Göötz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of DE112018001984A5 publication Critical patent/DE112018001984A5/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/12—Electrophoretic coating characterised by the process characterised by the article coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
DE112018001984.5T 2017-04-12 2018-04-10 Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement Active DE112018001984B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102017107939.4 2017-04-12
DE102017107939.4A DE102017107939A1 (de) 2017-04-12 2017-04-12 Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
PCT/EP2018/059169 WO2018189183A1 (de) 2017-04-12 2018-04-10 Verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement

Publications (2)

Publication Number Publication Date
DE112018001984A5 true DE112018001984A5 (de) 2019-12-24
DE112018001984B4 DE112018001984B4 (de) 2023-11-02

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
DE102017107939.4A Withdrawn DE102017107939A1 (de) 2017-04-12 2017-04-12 Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE112018001984.5T Active DE112018001984B4 (de) 2017-04-12 2018-04-10 Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102017107939.4A Withdrawn DE102017107939A1 (de) 2017-04-12 2017-04-12 Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement

Country Status (3)

Country Link
US (1) US11171129B2 (de)
DE (2) DE102017107939A1 (de)
WO (1) WO2018189183A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI707491B (zh) 2019-12-04 2020-10-11 錼創顯示科技股份有限公司 微型發光二極體顯示面板
DE102017119872A1 (de) * 2017-08-30 2019-02-28 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102019101417A1 (de) * 2019-01-21 2020-07-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauteils und strahlungsemittierendes Halbleiterbauteil
FR3099295A1 (fr) * 2019-07-23 2021-01-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Formulation de resine photosensible pour la conversion de couleurs
CN110896121B (zh) * 2019-12-04 2021-09-07 錼创显示科技股份有限公司 微型发光二极管显示面板
US20230087120A1 (en) * 2021-09-20 2023-03-23 Osram Opto Semiconductiors Gmbh Method for Producing a Structured Wavelength Conversion Layer and Optoelectronic Device with a Structured Wavelength Conversion Layer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7674847B2 (en) * 2003-02-21 2010-03-09 Promerus Llc Vinyl addition polycyclic olefin polymers prepared with non-olefinic chain transfer agents and uses thereof
WO2006068141A1 (ja) * 2004-12-24 2006-06-29 Kabushiki Kaisha Toshiba 白色ｌｅｄおよびそれを用いたバックライト並びに液晶表示装置
KR20070042730A (ko) * 2005-10-19 2007-04-24 엘지마이크론 주식회사 칼라필터 제조방법
TWI407250B (zh) * 2005-11-01 2013-09-01 Fujifilm Corp 負型含染料之硬化性組成物、彩色濾光片及其製法
DE102007053286A1 (de) * 2007-09-20 2009-04-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
US9117981B2 (en) * 2010-11-22 2015-08-25 Ube Material Industries, Ltd. Silicate phosphor exhibiting high light emission characteristics and moisture resistance, and light emitting device
DE102012106859B4 (de) 2012-07-27 2019-01-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines mehrfarbigen LED-Displays
DE102013209369A1 (de) * 2013-05-21 2014-11-27 Osram Gmbh Leuchtvorrichtung mit auf lichtemittierender Oberfläche aufliegender Konversionsschicht
DE102013109031B4 (de) 2013-08-21 2021-11-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
JP6367001B2 (ja) * 2014-05-26 2018-08-01 株式会社ジャパンディスプレイ 表示装置及び液晶表示装置
DE102014112769A1 (de) * 2014-09-04 2016-03-10 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
CN107431114B (zh) * 2015-03-06 2020-05-22 住友大阪水泥股份有限公司 光散射复合体形成用组合物、光散射复合体及其制造方法
WO2017094461A1 (ja) * 2015-12-01 2017-06-08 シャープ株式会社 画像形成素子

Also Published As

Publication number Publication date
DE102017107939A1 (de) 2018-10-18
DE112018001984B4 (de) 2023-11-02
US11171129B2 (en) 2021-11-09
WO2018189183A1 (de) 2018-10-18
US20200051963A1 (en) 2020-02-13

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