DE112014002166A5 - Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip - Google Patents

Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip Download PDF

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Publication number
DE112014002166A5
DE112014002166A5 DE112014002166.0T DE112014002166T DE112014002166A5 DE 112014002166 A5 DE112014002166 A5 DE 112014002166A5 DE 112014002166 T DE112014002166 T DE 112014002166T DE 112014002166 A5 DE112014002166 A5 DE 112014002166A5
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DE
Germany
Prior art keywords
semiconductor chip
optoelectronic semiconductor
producing
optoelectronic
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112014002166.0T
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English (en)
Inventor
Andreas Plössl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112014002166A5 publication Critical patent/DE112014002166A5/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Led Devices (AREA)
DE112014002166.0T 2013-04-26 2014-03-19 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip Withdrawn DE112014002166A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE201310104270 DE102013104270A1 (de) 2013-04-26 2013-04-26 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102013104270.8 2013-04-26
PCT/EP2014/055528 WO2014173590A1 (de) 2013-04-26 2014-03-19 Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip

Publications (1)

Publication Number Publication Date
DE112014002166A5 true DE112014002166A5 (de) 2016-01-07

Family

ID=50289690

Family Applications (2)

Application Number Title Priority Date Filing Date
DE201310104270 Withdrawn DE102013104270A1 (de) 2013-04-26 2013-04-26 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE112014002166.0T Withdrawn DE112014002166A5 (de) 2013-04-26 2014-03-19 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE201310104270 Withdrawn DE102013104270A1 (de) 2013-04-26 2013-04-26 Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Country Status (4)

Country Link
US (1) US9680049B2 (de)
CN (1) CN105122472B (de)
DE (2) DE102013104270A1 (de)
WO (2) WO2014173590A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014110071A1 (de) 2014-07-17 2016-01-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
JP6265175B2 (ja) * 2015-06-30 2018-01-24 日亜化学工業株式会社 半導体素子の製造方法
JP2017135246A (ja) * 2016-01-27 2017-08-03 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102016111058A1 (de) 2016-06-16 2017-12-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Laserdiodenbarrens und Laserdiodenbarren
DE102016124526A1 (de) * 2016-12-15 2018-06-21 Osram Opto Semiconductors Gmbh Bauteil mit einem optoelektronischen Bauelement
JP6669144B2 (ja) * 2016-12-16 2020-03-18 日亜化学工業株式会社 発光素子の製造方法
DE102017100997A1 (de) * 2017-01-19 2018-07-19 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
JP6504194B2 (ja) * 2017-03-31 2019-04-24 日亜化学工業株式会社 発光素子の製造方法
US10497838B2 (en) * 2018-04-12 2019-12-03 Osram Opto Semiconductors Gmbh Method for producing an optic device, optic device and assembly comprising such an optic device
DE102018111319A1 (de) * 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102021119999A1 (de) 2021-08-02 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser und projektor

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10148227B4 (de) 2001-09-28 2015-03-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
TWI327340B (en) * 2004-10-07 2010-07-11 Showa Denko Kk Production method for semiconductor device
DE102005041064B4 (de) * 2005-08-30 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zu dessen Herstellung
US20070298529A1 (en) * 2006-05-31 2007-12-27 Toyoda Gosei, Co., Ltd. Semiconductor light-emitting device and method for separating semiconductor light-emitting devices
JP4903179B2 (ja) 2007-04-23 2012-03-28 サムソン エルイーディー カンパニーリミテッド． 発光装置及びその製造方法
DE102008010512A1 (de) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils
US20100015782A1 (en) 2008-07-18 2010-01-21 Chen-Hua Yu Wafer Dicing Methods
US8216867B2 (en) * 2009-06-10 2012-07-10 Cree, Inc. Front end scribing of light emitting diode (LED) wafers and resulting devices
JP2012016726A (ja) * 2010-07-08 2012-01-26 Mitsubishi Chemicals Corp 窒化物材料の加工方法、半導体機能素子の製造方法、半導体発光素子の製造方法、半導体発光素子アレイ、半導体発光素子およびレーザ加工装置
JP5643036B2 (ja) * 2010-09-14 2014-12-17 株式会社ディスコ 光デバイスウエーハの加工方法
KR101249924B1 (ko) 2010-11-03 2013-04-03 (주)버티클 반도체 소자 및 그 제조 방법
CN102130253B (zh) * 2011-01-27 2012-12-26 广东银雨芯片半导体有限公司 一种高出光效率的led晶片及其制造方法
KR101222489B1 (ko) * 2011-03-09 2013-01-15 한국기계연구원 레이저를 이용한 웨이퍼의 국부적 비정질화를 선행한 이방성 에칭방법 및 이를 이용한 다이싱 방법 및 드릴링 방법
JP2013042119A (ja) * 2011-07-21 2013-02-28 Hamamatsu Photonics Kk 発光素子の製造方法
US8912025B2 (en) * 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process

Also Published As

Publication number Publication date
CN105122472B (zh) 2018-06-05
CN105122472A (zh) 2015-12-02
DE102013104270A1 (de) 2014-10-30
WO2014173590A1 (de) 2014-10-30
US20160027959A1 (en) 2016-01-28
WO2014173589A1 (de) 2014-10-30
US9680049B2 (en) 2017-06-13

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