DE112013005934A8 - Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements - Google Patents

Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements Download PDF

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Publication number
DE112013005934A8
DE112013005934A8 DE112013005934.7T DE112013005934T DE112013005934A8 DE 112013005934 A8 DE112013005934 A8 DE 112013005934A8 DE 112013005934 T DE112013005934 T DE 112013005934T DE 112013005934 A8 DE112013005934 A8 DE 112013005934A8
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Germany
Prior art keywords
semiconductor component
optoelectronic semiconductor
producing
optoelectronic
component
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DE112013005934.7T
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English (en)
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DE112013005934A5 (de
DE112013005934B4 (de
Inventor
Britta Göötz
Wolfgang Mönch
Norwin Von Malm
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of DE112013005934A8 publication Critical patent/DE112013005934A8/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
DE112013005934.7T 2012-12-12 2013-12-11 Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements Active DE112013005934B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012112149.4 2012-12-12
DE102012112149.4A DE102012112149A1 (de) 2012-12-12 2012-12-12 Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
PCT/EP2013/076265 WO2014090893A1 (de) 2012-12-12 2013-12-11 Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements

Publications (3)

Publication Number Publication Date
DE112013005934A5 DE112013005934A5 (de) 2015-09-10
DE112013005934A8 true DE112013005934A8 (de) 2016-05-04
DE112013005934B4 DE112013005934B4 (de) 2022-02-03

Family

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Family Applications (2)

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DE102012112149.4A Withdrawn DE102012112149A1 (de) 2012-12-12 2012-12-12 Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE112013005934.7T Active DE112013005934B4 (de) 2012-12-12 2013-12-11 Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

Family Applications Before (1)

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DE102012112149.4A Withdrawn DE102012112149A1 (de) 2012-12-12 2012-12-12 Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

Country Status (3)

Country Link
US (2) US9614131B2 (de)
DE (2) DE102012112149A1 (de)
WO (1) WO2014090893A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11160148B2 (en) * 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
DE102012112149A1 (de) * 2012-12-12 2014-06-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
WO2016087600A1 (en) * 2014-12-04 2016-06-09 Osram Sylvania Inc. Method for producing a ceramic conversion element, ceramic conversion element and optoelectronic device
DE102015103055A1 (de) * 2014-12-04 2016-06-09 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102015104220A1 (de) * 2015-03-20 2016-09-22 Osram Opto Semiconductors Gmbh Optoelektronische Leuchtvorrichtung
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
JP6692682B2 (ja) * 2016-04-21 2020-05-13 スタンレー電気株式会社 面発光レーザ装置及びその製造方法
US10222681B2 (en) * 2016-11-07 2019-03-05 Limileds LLC Segmented light or optical power emitting device with fully converting wavelength converting material and methods of operation
DE102017114011B4 (de) 2017-06-22 2021-09-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
WO2019028314A1 (en) 2017-08-03 2019-02-07 Cree, Inc. HIGH DENSITY PIXELIZED LED CHIPS AND NETWORK DEVICES AND METHODS OF MANUFACTURE
US11054112B2 (en) 2017-12-22 2021-07-06 Lumileds Llc Ceramic phosphor with lateral light barriers
US10529773B2 (en) 2018-02-14 2020-01-07 Cree, Inc. Solid state lighting devices with opposing emission directions
DE102018117591A1 (de) * 2018-07-20 2020-01-23 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Anzeigevorrichtung
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
DE102019121515A1 (de) * 2019-08-09 2021-02-11 Schott Ag Lichtkonversionseinrichtung und Verfahren zur Herstellung einer Lichtkonversionseinrichtung
US11817526B2 (en) 2019-10-29 2023-11-14 Creeled, Inc. Texturing for high density pixelated-LED chips and chip array devices
KR20210081475A (ko) 2019-12-23 2021-07-02 서울반도체 주식회사 헤드 램프 장치
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods
KR20220125618A (ko) * 2021-03-05 2022-09-14 주식회사 루멘스 마이크로 엘이디 패널 및 이의 제조 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7554258B2 (en) 2002-10-22 2009-06-30 Osram Opto Semiconductors Gmbh Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body
JP5490407B2 (ja) 2005-03-14 2014-05-14 コーニンクレッカ フィリップス エヌ ヴェ 多結晶セラミック構造の蛍光体、及び前記蛍光体を有する発光素子
JP2007242324A (ja) 2006-03-07 2007-09-20 Rohm Co Ltd 有機ｅｌ表示装置
US9640737B2 (en) * 2011-01-31 2017-05-02 Cree, Inc. Horizontal light emitting diodes including phosphor particles
US8461613B2 (en) * 2008-05-27 2013-06-11 Interlight Optotech Corporation Light emitting device
DE102008025923B4 (de) 2008-05-30 2020-06-18 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
JP5227135B2 (ja) * 2008-10-10 2013-07-03 スタンレー電気株式会社 半導体発光装置およびその製造方法
DE102008052751A1 (de) 2008-10-22 2010-04-29 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Lumineszenzkonversionselements, Lumineszenzkonversionselement und optoelektronisches Bauteil
US9196653B2 (en) * 2009-07-30 2015-11-24 3M Innovative Properties Company Pixelated LED
DE102009037186A1 (de) 2009-08-12 2011-02-17 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauteil
JP5379615B2 (ja) * 2009-09-09 2013-12-25 パナソニック株式会社 照明装置
JP2011108588A (ja) * 2009-11-20 2011-06-02 Koito Mfg Co Ltd 発光モジュールおよび車両用灯具
JP5720887B2 (ja) * 2011-03-30 2015-05-20 ソニー株式会社 表示装置および電子機器
US8748202B2 (en) * 2012-09-14 2014-06-10 Bridgelux, Inc. Substrate free LED package
DE102012112149A1 (de) * 2012-12-12 2014-06-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

Also Published As

Publication number Publication date
US9614131B2 (en) 2017-04-04
US20170207373A1 (en) 2017-07-20
US20150311407A1 (en) 2015-10-29
US10236426B2 (en) 2019-03-19
DE102012112149A1 (de) 2014-06-26
DE112013005934A5 (de) 2015-09-10
WO2014090893A1 (de) 2014-06-19
DE102012112149A8 (de) 2014-09-04
DE112013005934B4 (de) 2022-02-03

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