CN101946339B - 用于制造多个发射辐射的器件的方法以及发射辐射的器件 - Google Patents

用于制造多个发射辐射的器件的方法以及发射辐射的器件 Download PDF

Info

Publication number
CN101946339B
CN101946339B CN2009801060204A CN200980106020A CN101946339B CN 101946339 B CN101946339 B CN 101946339B CN 2009801060204 A CN2009801060204 A CN 2009801060204A CN 200980106020 A CN200980106020 A CN 200980106020A CN 101946339 B CN101946339 B CN 101946339B
Authority
CN
China
Prior art keywords
layer
separation
radiation
intermediate layer
hardness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009801060204A
Other languages
English (en)
Chinese (zh)
Other versions
CN101946339A (zh
Inventor
斯特凡·普雷乌斯
哈拉尔德·雅格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN101946339A publication Critical patent/CN101946339A/zh
Application granted granted Critical
Publication of CN101946339B publication Critical patent/CN101946339B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Led Device Packages (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CN2009801060204A 2008-02-22 2009-02-19 用于制造多个发射辐射的器件的方法以及发射辐射的器件 Expired - Fee Related CN101946339B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008010510 2008-02-22
DE102008010510.4 2008-02-22
DE102008014927A DE102008014927A1 (de) 2008-02-22 2008-03-19 Verfahren zur Herstellung einer Mehrzahl von strahlungsemittierenden Bauelementen und strahlungsemittierendes Bauelement
DE102008014927.6 2008-03-19
PCT/DE2009/000249 WO2009103283A1 (de) 2008-02-22 2009-02-19 Verfahren zur herstellung einer mehrzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement

Publications (2)

Publication Number Publication Date
CN101946339A CN101946339A (zh) 2011-01-12
CN101946339B true CN101946339B (zh) 2012-08-29

Family

ID=40896796

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801060204A Expired - Fee Related CN101946339B (zh) 2008-02-22 2009-02-19 用于制造多个发射辐射的器件的方法以及发射辐射的器件

Country Status (8)

Country Link
US (1) US8790939B2 (enExample)
EP (1) EP2255396B1 (enExample)
JP (1) JP5579080B2 (enExample)
KR (1) KR101525638B1 (enExample)
CN (1) CN101946339B (enExample)
DE (1) DE102008014927A1 (enExample)
TW (1) TW200947765A (enExample)
WO (1) WO2009103283A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012008637A1 (de) 2012-05-02 2013-11-07 Heraeus Noblelight Gmbh Optisches Modul mit Ausformung zur Montage
DE102012025826B3 (de) * 2012-05-02 2020-09-24 Heraeus Noblelight Gmbh Optisches Modul mit Ausformung zur Montage
JP6176302B2 (ja) * 2015-01-30 2017-08-09 日亜化学工業株式会社 発光装置の製造方法
DE102015105661B4 (de) 2015-04-14 2022-04-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Vorrichtung mit einer Mischung aufweisend ein Silikon und ein fluor-organisches Additiv
JP6925100B2 (ja) * 2015-05-21 2021-08-25 日亜化学工業株式会社 発光装置
TWI585844B (zh) * 2015-09-25 2017-06-01 光寶光電（常州）有限公司 發光二極體封裝結構及其製造方法
DE102017117548A1 (de) * 2017-08-02 2019-02-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017117550A1 (de) * 2017-08-02 2019-02-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
CN114242601B (zh) * 2021-11-30 2025-09-05 北京卫星制造厂有限公司 一种用于igbt模块的密封方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1393942A (zh) * 2001-06-11 2003-01-29 株式会社西铁城电子 发光器件及其制造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3604108B2 (ja) 1997-02-17 2004-12-22 株式会社シチズン電子 チップ型光半導体の製造方法
JPH1174410A (ja) * 1997-08-28 1999-03-16 Citizen Electron Co Ltd 表面実装型チップ部品及びその製造方法
JP3497722B2 (ja) * 1998-02-27 2004-02-16 富士通株式会社 半導体装置及びその製造方法及びその搬送トレイ
JP2000183218A (ja) * 1998-12-14 2000-06-30 Mitsumi Electric Co Ltd Ｉｃパッケージの製造方法
JP3455762B2 (ja) * 1999-11-11 2003-10-14 カシオ計算機株式会社 半導体装置およびその製造方法
DE10008203B4 (de) * 2000-02-23 2008-02-07 Vishay Semiconductor Gmbh Verfahren zum Herstellen elektronischer Halbleiterbauelemente
US6345903B1 (en) * 2000-09-01 2002-02-12 Citizen Electronics Co., Ltd. Surface-mount type emitting diode and method of manufacturing same
MY131962A (en) * 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
JP2003179269A (ja) * 2001-01-24 2003-06-27 Nichia Chem Ind Ltd 光半導体素子
JP3844196B2 (ja) * 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
JP2003031526A (ja) * 2001-07-16 2003-01-31 Mitsumi Electric Co Ltd モジュールの製造方法及びモジュール
US6743699B1 (en) * 2003-01-21 2004-06-01 Micron Technology, Inc. Method of fabricating semiconductor components
JP2004319530A (ja) * 2003-02-28 2004-11-11 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
JP2005051150A (ja) * 2003-07-31 2005-02-24 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
WO2005106978A1 (ja) * 2004-04-28 2005-11-10 Matsushita Electric Industrial Co., Ltd. 発光装置およびその製造方法
US7087463B2 (en) * 2004-08-04 2006-08-08 Gelcore, Llc Laser separation of encapsulated submount
JP4747704B2 (ja) 2005-07-20 2011-08-17 豊田合成株式会社 蛍光体層付き発光装置の製造方法
US7842526B2 (en) * 2004-09-09 2010-11-30 Toyoda Gosei Co., Ltd. Light emitting device and method of producing same
JP5128047B2 (ja) 2004-10-07 2013-01-23 Ｔｏｗａ株式会社 光デバイス及び光デバイスの生産方法
TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Industrial Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
JP2007165789A (ja) * 2005-12-16 2007-06-28 Olympus Corp 半導体装置の製造方法
JP2007184426A (ja) * 2006-01-06 2007-07-19 Shinko Electric Ind Co Ltd 半導体装置の製造方法
JP4838005B2 (ja) * 2006-02-20 2011-12-14 京セラ株式会社 発光装置
JP2007324205A (ja) 2006-05-30 2007-12-13 Toyoda Gosei Co Ltd 発光装置
US7816769B2 (en) * 2006-08-28 2010-10-19 Atmel Corporation Stackable packages for three-dimensional packaging of semiconductor dice
US7883810B2 (en) * 2006-11-09 2011-02-08 GM Global Technology Operations LLC Slow purge for improved water removal, freeze durability, purge energy efficiency and voltage degradation due to shutdown/startup cycling
JP4343962B2 (ja) * 2007-01-19 2009-10-14 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法及び半導体装置
US7923846B2 (en) * 2007-11-16 2011-04-12 Stats Chippac Ltd. Integrated circuit package-in-package system with wire-in-film encapsulant

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1393942A (zh) * 2001-06-11 2003-01-29 株式会社西铁城电子 发光器件及其制造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开平10-229097A 1998.08.25
JP特开平11-74410A 1999.03.16

Also Published As

Publication number Publication date
JP2011512683A (ja) 2011-04-21
JP5579080B2 (ja) 2014-08-27
TW200947765A (en) 2009-11-16
KR20100127220A (ko) 2010-12-03
EP2255396A1 (de) 2010-12-01
WO2009103283A1 (de) 2009-08-27
EP2255396B1 (de) 2018-08-29
US8790939B2 (en) 2014-07-29
KR101525638B1 (ko) 2015-06-03
CN101946339A (zh) 2011-01-12
US20110127564A1 (en) 2011-06-02
DE102008014927A1 (de) 2009-08-27

Similar Documents

Publication Publication Date Title
CN101946339B (zh) 用于制造多个发射辐射的器件的方法以及发射辐射的器件
CN100334711C (zh) 用于与散热器有效热接触的、微电子管芯侧面上的背面金属化
US6884646B1 (en) Method for forming an LED device with a metallic substrate
CN100487890C (zh) 用以由发光二极管移除热量的系统及方法
CN103839910B (zh) 包括芯片载体的半导体器件组件、半导体晶片和制造半导体器件的方法
US12094837B2 (en) Method of manufacturing semiconductor devices by filling grooves formed in a front side surface of a wafer with a side face protection material
JP2005005380A (ja) 半導体装置の製造方法
US20250157857A1 (en) Component and method of manufacturing a component using an ultrathin carrier
CN103889643A (zh) 用于分割半导体器件复合件的方法
KR102407430B1 (ko) 광전자 반도체 부품 및 광전자 반도체 부품의 제조 방법
US20070099317A1 (en) Method for manufacturing vertical structure light emitting diode
CN105140139B (zh) 厚金属焊盘的处理
US10115877B2 (en) Method for manufacturing semiconductor device
JP2013058707A (ja) 半導体発光素子の製造方法
JP2008140872A (ja) Ｉｉｉ−ｖ族半導体素子、およびその製造方法
KR102198918B1 (ko) 엘이디 금속 기판
US20250079240A1 (en) Semiconductor device and manufacturing method thereof
US20230197518A1 (en) Semiconductor device and method for manufacturing same
JP4559787B2 (ja) サブマウントチップ貼付シートの製造方法
US20220376133A1 (en) Method for Producing an Optoelectronic Semiconductor Component and Optoelectronic Semiconductor Component
CN100580875C (zh) 半导体元件的制造方法以及半导体元件
JP2001176761A (ja) 薄層基板半導体装置及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120829

Termination date: 20200219

CF01 Termination of patent right due to non-payment of annual fee