KR101525638B1 - 복수 개의 복사 방출 소자들 제조 방법 및 복사 방출 소자 - Google Patents

복수 개의 복사 방출 소자들 제조 방법 및 복사 방출 소자 Download PDF

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KR101525638B1
KR101525638B1 KR1020107020192A KR20107020192A KR101525638B1 KR 101525638 B1 KR101525638 B1 KR 101525638B1 KR 1020107020192 A KR1020107020192 A KR 1020107020192A KR 20107020192 A KR20107020192 A KR 20107020192A KR 101525638 B1 KR101525638 B1 KR 101525638B1
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layer
separation
intermediate layer
potting
radiation emitting
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KR20100127220A (ko
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스테판 프레우스
해럴드 얘거
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Led Device Packages (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
KR1020107020192A 2008-02-22 2009-02-19 복수 개의 복사 방출 소자들 제조 방법 및 복사 방출 소자 Expired - Fee Related KR101525638B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008010510 2008-02-22
DE102008010510.4 2008-02-22
DE102008014927A DE102008014927A1 (de) 2008-02-22 2008-03-19 Verfahren zur Herstellung einer Mehrzahl von strahlungsemittierenden Bauelementen und strahlungsemittierendes Bauelement
DE102008014927.6 2008-03-19
PCT/DE2009/000249 WO2009103283A1 (de) 2008-02-22 2009-02-19 Verfahren zur herstellung einer mehrzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement

Publications (2)

Publication Number Publication Date
KR20100127220A KR20100127220A (ko) 2010-12-03
KR101525638B1 true KR101525638B1 (ko) 2015-06-03

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KR1020107020192A Expired - Fee Related KR101525638B1 (ko) 2008-02-22 2009-02-19 복수 개의 복사 방출 소자들 제조 방법 및 복사 방출 소자

Country Status (8)

Country Link
US (1) US8790939B2 (enExample)
EP (1) EP2255396B1 (enExample)
JP (1) JP5579080B2 (enExample)
KR (1) KR101525638B1 (enExample)
CN (1) CN101946339B (enExample)
DE (1) DE102008014927A1 (enExample)
TW (1) TW200947765A (enExample)
WO (1) WO2009103283A1 (enExample)

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* Cited by examiner, † Cited by third party
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DE102012008637A1 (de) 2012-05-02 2013-11-07 Heraeus Noblelight Gmbh Optisches Modul mit Ausformung zur Montage
DE102012025826B3 (de) * 2012-05-02 2020-09-24 Heraeus Noblelight Gmbh Optisches Modul mit Ausformung zur Montage
JP6176302B2 (ja) * 2015-01-30 2017-08-09 日亜化学工業株式会社 発光装置の製造方法
DE102015105661B4 (de) 2015-04-14 2022-04-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Vorrichtung mit einer Mischung aufweisend ein Silikon und ein fluor-organisches Additiv
JP6925100B2 (ja) * 2015-05-21 2021-08-25 日亜化学工業株式会社 発光装置
TWI585844B (zh) * 2015-09-25 2017-06-01 光寶光電（常州）有限公司 發光二極體封裝結構及其製造方法
DE102017117548A1 (de) * 2017-08-02 2019-02-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017117550A1 (de) * 2017-08-02 2019-02-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
CN114242601B (zh) * 2021-11-30 2025-09-05 北京卫星制造厂有限公司 一种用于igbt模块的密封方法

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JPH1174410A (ja) * 1997-08-28 1999-03-16 Citizen Electron Co Ltd 表面実装型チップ部品及びその製造方法
JP2000183218A (ja) * 1998-12-14 2000-06-30 Mitsumi Electric Co Ltd Ｉｃパッケージの製造方法
JP2003179269A (ja) * 2001-01-24 2003-06-27 Nichia Chem Ind Ltd 光半導体素子
JP2007221044A (ja) * 2006-02-20 2007-08-30 Kyocera Corp 発光装置

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JP3604108B2 (ja) 1997-02-17 2004-12-22 株式会社シチズン電子 チップ型光半導体の製造方法
JP3497722B2 (ja) * 1998-02-27 2004-02-16 富士通株式会社 半導体装置及びその製造方法及びその搬送トレイ
JP3455762B2 (ja) * 1999-11-11 2003-10-14 カシオ計算機株式会社 半導体装置およびその製造方法
DE10008203B4 (de) * 2000-02-23 2008-02-07 Vishay Semiconductor Gmbh Verfahren zum Herstellen elektronischer Halbleiterbauelemente
US6345903B1 (en) * 2000-09-01 2002-02-12 Citizen Electronics Co., Ltd. Surface-mount type emitting diode and method of manufacturing same
MY131962A (en) * 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
JP4789350B2 (ja) * 2001-06-11 2011-10-12 シチズン電子株式会社 発光ダイオードの製造方法
JP3844196B2 (ja) * 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
JP2003031526A (ja) * 2001-07-16 2003-01-31 Mitsumi Electric Co Ltd モジュールの製造方法及びモジュール
US6743699B1 (en) * 2003-01-21 2004-06-01 Micron Technology, Inc. Method of fabricating semiconductor components
JP2004319530A (ja) * 2003-02-28 2004-11-11 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
JP2005051150A (ja) * 2003-07-31 2005-02-24 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
WO2005106978A1 (ja) * 2004-04-28 2005-11-10 Matsushita Electric Industrial Co., Ltd. 発光装置およびその製造方法
US7087463B2 (en) * 2004-08-04 2006-08-08 Gelcore, Llc Laser separation of encapsulated submount
JP4747704B2 (ja) 2005-07-20 2011-08-17 豊田合成株式会社 蛍光体層付き発光装置の製造方法
US7842526B2 (en) * 2004-09-09 2010-11-30 Toyoda Gosei Co., Ltd. Light emitting device and method of producing same
JP5128047B2 (ja) 2004-10-07 2013-01-23 Ｔｏｗａ株式会社 光デバイス及び光デバイスの生産方法
TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Industrial Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
JP2007165789A (ja) * 2005-12-16 2007-06-28 Olympus Corp 半導体装置の製造方法
JP2007184426A (ja) * 2006-01-06 2007-07-19 Shinko Electric Ind Co Ltd 半導体装置の製造方法
JP2007324205A (ja) 2006-05-30 2007-12-13 Toyoda Gosei Co Ltd 発光装置
US7816769B2 (en) * 2006-08-28 2010-10-19 Atmel Corporation Stackable packages for three-dimensional packaging of semiconductor dice
US7883810B2 (en) * 2006-11-09 2011-02-08 GM Global Technology Operations LLC Slow purge for improved water removal, freeze durability, purge energy efficiency and voltage degradation due to shutdown/startup cycling
JP4343962B2 (ja) * 2007-01-19 2009-10-14 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法及び半導体装置
US7923846B2 (en) * 2007-11-16 2011-04-12 Stats Chippac Ltd. Integrated circuit package-in-package system with wire-in-film encapsulant

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1174410A (ja) * 1997-08-28 1999-03-16 Citizen Electron Co Ltd 表面実装型チップ部品及びその製造方法
JP2000183218A (ja) * 1998-12-14 2000-06-30 Mitsumi Electric Co Ltd Ｉｃパッケージの製造方法
JP2003179269A (ja) * 2001-01-24 2003-06-27 Nichia Chem Ind Ltd 光半導体素子
JP2007221044A (ja) * 2006-02-20 2007-08-30 Kyocera Corp 発光装置

Also Published As

Publication number Publication date
JP2011512683A (ja) 2011-04-21
JP5579080B2 (ja) 2014-08-27
CN101946339B (zh) 2012-08-29
TW200947765A (en) 2009-11-16
KR20100127220A (ko) 2010-12-03
EP2255396A1 (de) 2010-12-01
WO2009103283A1 (de) 2009-08-27
EP2255396B1 (de) 2018-08-29
US8790939B2 (en) 2014-07-29
CN101946339A (zh) 2011-01-12
US20110127564A1 (en) 2011-06-02
DE102008014927A1 (de) 2009-08-27

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