JP5579080B2 - 複数のビーム放射構成素子を作製する方法およびビーム放射構成素子 - Google Patents

複数のビーム放射構成素子を作製する方法およびビーム放射構成素子 Download PDF

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JP5579080B2
JP5579080B2 JP2010547042A JP2010547042A JP5579080B2 JP 5579080 B2 JP5579080 B2 JP 5579080B2 JP 2010547042 A JP2010547042 A JP 2010547042A JP 2010547042 A JP2010547042 A JP 2010547042A JP 5579080 B2 JP5579080 B2 JP 5579080B2
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JP2011512683A (ja
JP2011512683A5 (enExample
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プロイス シュテファン
イェーガー ハーラルト
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Led Device Packages (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2010547042A 2008-02-22 2009-02-19 複数のビーム放射構成素子を作製する方法およびビーム放射構成素子 Expired - Fee Related JP5579080B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008010510 2008-02-22
DE102008010510.4 2008-02-22
DE102008014927A DE102008014927A1 (de) 2008-02-22 2008-03-19 Verfahren zur Herstellung einer Mehrzahl von strahlungsemittierenden Bauelementen und strahlungsemittierendes Bauelement
DE102008014927.6 2008-03-19
PCT/DE2009/000249 WO2009103283A1 (de) 2008-02-22 2009-02-19 Verfahren zur herstellung einer mehrzahl von strahlungsemittierenden bauelementen und strahlungsemittierendes bauelement

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JP2011512683A JP2011512683A (ja) 2011-04-21
JP2011512683A5 JP2011512683A5 (enExample) 2011-12-15
JP5579080B2 true JP5579080B2 (ja) 2014-08-27

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JP2010547042A Expired - Fee Related JP5579080B2 (ja) 2008-02-22 2009-02-19 複数のビーム放射構成素子を作製する方法およびビーム放射構成素子

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US (1) US8790939B2 (enExample)
EP (1) EP2255396B1 (enExample)
JP (1) JP5579080B2 (enExample)
KR (1) KR101525638B1 (enExample)
CN (1) CN101946339B (enExample)
DE (1) DE102008014927A1 (enExample)
TW (1) TW200947765A (enExample)
WO (1) WO2009103283A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012008637A1 (de) 2012-05-02 2013-11-07 Heraeus Noblelight Gmbh Optisches Modul mit Ausformung zur Montage
DE102012025826B3 (de) * 2012-05-02 2020-09-24 Heraeus Noblelight Gmbh Optisches Modul mit Ausformung zur Montage
JP6176302B2 (ja) * 2015-01-30 2017-08-09 日亜化学工業株式会社 発光装置の製造方法
DE102015105661B4 (de) 2015-04-14 2022-04-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Vorrichtung mit einer Mischung aufweisend ein Silikon und ein fluor-organisches Additiv
JP6925100B2 (ja) * 2015-05-21 2021-08-25 日亜化学工業株式会社 発光装置
TWI585844B (zh) * 2015-09-25 2017-06-01 光寶光電（常州）有限公司 發光二極體封裝結構及其製造方法
DE102017117548A1 (de) * 2017-08-02 2019-02-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017117550A1 (de) * 2017-08-02 2019-02-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
CN114242601B (zh) * 2021-11-30 2025-09-05 北京卫星制造厂有限公司 一种用于igbt模块的密封方法

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JP3497722B2 (ja) * 1998-02-27 2004-02-16 富士通株式会社 半導体装置及びその製造方法及びその搬送トレイ
JP2000183218A (ja) * 1998-12-14 2000-06-30 Mitsumi Electric Co Ltd Ｉｃパッケージの製造方法
JP3455762B2 (ja) * 1999-11-11 2003-10-14 カシオ計算機株式会社 半導体装置およびその製造方法
DE10008203B4 (de) * 2000-02-23 2008-02-07 Vishay Semiconductor Gmbh Verfahren zum Herstellen elektronischer Halbleiterbauelemente
US6345903B1 (en) * 2000-09-01 2002-02-12 Citizen Electronics Co., Ltd. Surface-mount type emitting diode and method of manufacturing same
MY131962A (en) * 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
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JP3844196B2 (ja) * 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
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JP2004319530A (ja) * 2003-02-28 2004-11-11 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
JP2005051150A (ja) * 2003-07-31 2005-02-24 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
WO2005106978A1 (ja) * 2004-04-28 2005-11-10 Matsushita Electric Industrial Co., Ltd. 発光装置およびその製造方法
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JP4747704B2 (ja) 2005-07-20 2011-08-17 豊田合成株式会社 蛍光体層付き発光装置の製造方法
US7842526B2 (en) * 2004-09-09 2010-11-30 Toyoda Gosei Co., Ltd. Light emitting device and method of producing same
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TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Industrial Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
JP2007165789A (ja) * 2005-12-16 2007-06-28 Olympus Corp 半導体装置の製造方法
JP2007184426A (ja) * 2006-01-06 2007-07-19 Shinko Electric Ind Co Ltd 半導体装置の製造方法
JP4838005B2 (ja) * 2006-02-20 2011-12-14 京セラ株式会社 発光装置
JP2007324205A (ja) 2006-05-30 2007-12-13 Toyoda Gosei Co Ltd 発光装置
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US7923846B2 (en) * 2007-11-16 2011-04-12 Stats Chippac Ltd. Integrated circuit package-in-package system with wire-in-film encapsulant

Also Published As

Publication number Publication date
JP2011512683A (ja) 2011-04-21
CN101946339B (zh) 2012-08-29
TW200947765A (en) 2009-11-16
KR20100127220A (ko) 2010-12-03
EP2255396A1 (de) 2010-12-01
WO2009103283A1 (de) 2009-08-27
EP2255396B1 (de) 2018-08-29
US8790939B2 (en) 2014-07-29
KR101525638B1 (ko) 2015-06-03
CN101946339A (zh) 2011-01-12
US20110127564A1 (en) 2011-06-02
DE102008014927A1 (de) 2009-08-27

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