JP2012085239A5 - - Google Patents

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Publication number
JP2012085239A5
JP2012085239A5 JP2010232046A JP2010232046A JP2012085239A5 JP 2012085239 A5 JP2012085239 A5 JP 2012085239A5 JP 2010232046 A JP2010232046 A JP 2010232046A JP 2010232046 A JP2010232046 A JP 2010232046A JP 2012085239 A5 JP2012085239 A5 JP 2012085239A5
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JP
Japan
Prior art keywords
film
insulating layer
forming
semiconductor
semiconductor substrate
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Application number
JP2010232046A
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English (en)
Japanese (ja)
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JP5677016B2 (ja
JP2012085239A (ja
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Priority claimed from JP2010232046A external-priority patent/JP5677016B2/ja
Priority to JP2010232046A priority Critical patent/JP5677016B2/ja
Application filed filed Critical
Priority to US13/248,440 priority patent/US8653613B2/en
Priority to EP11184163.1A priority patent/EP2441530A3/en
Priority to CN201110310468.7A priority patent/CN102569306B/zh
Publication of JP2012085239A publication Critical patent/JP2012085239A/ja
Publication of JP2012085239A5 publication Critical patent/JP2012085239A5/ja
Priority to US14/146,853 priority patent/US8980670B2/en
Publication of JP5677016B2 publication Critical patent/JP5677016B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010232046A 2010-10-15 2010-10-15 電気機械変換装置及びその作製方法 Expired - Fee Related JP5677016B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010232046A JP5677016B2 (ja) 2010-10-15 2010-10-15 電気機械変換装置及びその作製方法
US13/248,440 US8653613B2 (en) 2010-10-15 2011-09-29 Electromechanical transducer and method of manufacturing the same
EP11184163.1A EP2441530A3 (en) 2010-10-15 2011-10-06 Electromechanical transducer and method of manufacturing the same
CN201110310468.7A CN102569306B (zh) 2010-10-15 2011-10-14 电气机械变换器及其制造方法
US14/146,853 US8980670B2 (en) 2010-10-15 2014-01-03 Electromechanical transducer and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010232046A JP5677016B2 (ja) 2010-10-15 2010-10-15 電気機械変換装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2012085239A JP2012085239A (ja) 2012-04-26
JP2012085239A5 true JP2012085239A5 (enExample) 2013-11-28
JP5677016B2 JP5677016B2 (ja) 2015-02-25

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Family Applications (1)

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JP2010232046A Expired - Fee Related JP5677016B2 (ja) 2010-10-15 2010-10-15 電気機械変換装置及びその作製方法

Country Status (4)

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US (2) US8653613B2 (enExample)
EP (1) EP2441530A3 (enExample)
JP (1) JP5677016B2 (enExample)
CN (1) CN102569306B (enExample)

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JP5581106B2 (ja) * 2009-04-27 2014-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5896665B2 (ja) * 2011-09-20 2016-03-30 キヤノン株式会社 電気機械変換装置の製造方法
NL2009757C2 (en) * 2012-11-05 2014-05-08 Micronit Microfluidics Bv Method for forming an electrically conductive via in a substrate.
CN104812504B (zh) * 2012-11-20 2018-01-26 皇家飞利浦有限公司 电容性微加工换能器和制造所述电容性微加工换能器的方法
US9499392B2 (en) 2013-02-05 2016-11-22 Butterfly Network, Inc. CMOS ultrasonic transducers and related apparatus and methods
US9721832B2 (en) 2013-03-15 2017-08-01 Kulite Semiconductor Products, Inc. Methods of fabricating silicon-on-insulator (SOI) semiconductor devices using blanket fusion bonding
EP3639937A1 (en) 2013-03-15 2020-04-22 Butterfly Network, Inc. Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same
JP6381195B2 (ja) * 2013-10-22 2018-08-29 キヤノン株式会社 静電容量型トランスデューサ及びその作製方法
JP6882890B2 (ja) * 2013-11-18 2021-06-02 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 超音波トランスデューサアセンブリ
KR20150065067A (ko) * 2013-12-04 2015-06-12 삼성전자주식회사 정전용량 미세가공 초음파 변환기 및 그 제조방법
KR102155695B1 (ko) * 2014-02-12 2020-09-21 삼성전자주식회사 전기 음향 변환기
JP6545976B2 (ja) 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
US10239093B2 (en) * 2014-03-12 2019-03-26 Koninklijke Philips N.V. Ultrasound transducer assembly and method for manufacturing an ultrasound transducer assembly
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
WO2017049278A1 (en) * 2015-09-18 2017-03-23 Vesper Technologies Inc. Plate spring
JP6917700B2 (ja) 2015-12-02 2021-08-11 株式会社半導体エネルギー研究所 半導体装置
US11039814B2 (en) 2016-12-04 2021-06-22 Exo Imaging, Inc. Imaging devices having piezoelectric transducers
WO2018236956A1 (en) 2017-06-21 2018-12-27 Butterfly Network, Inc. Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections
US10648852B2 (en) 2018-04-11 2020-05-12 Exo Imaging Inc. Imaging devices having piezoelectric transceivers
US10656007B2 (en) 2018-04-11 2020-05-19 Exo Imaging Inc. Asymmetrical ultrasound transducer array
CN112470214A (zh) 2018-05-21 2021-03-09 艾科索成像公司 具有q值突变的超声换能器
CN112805843B (zh) 2018-08-01 2024-06-14 艾科索成像公司 用于集成具有混合触点的超声换能器的系统和方法
WO2020190732A1 (en) * 2019-03-15 2020-09-24 Massachusetts Institute Of Technology Microscale and nanoscale structured electromechanical transducers employing compliant dielectric spacers
WO2021050853A1 (en) 2019-09-12 2021-03-18 Exo Imaging, Inc. Increased mut coupling efficiency and bandwidth via edge groove, virtual pivots, and free boundaries
CN115968272A (zh) * 2021-03-29 2023-04-14 艾科索成像公司 用于减少mut阵列中的串扰的沟槽
US11951512B2 (en) 2021-03-31 2024-04-09 Exo Imaging, Inc. Imaging devices having piezoelectric transceivers with harmonic characteristics
US11819881B2 (en) 2021-03-31 2023-11-21 Exo Imaging, Inc. Imaging devices having piezoelectric transceivers with harmonic characteristics
US12486159B2 (en) 2021-06-30 2025-12-02 Exo Imaging, Inc. Micro-machined ultrasound transducers with insulation layer and methods of manufacture

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US6958255B2 (en) * 2002-08-08 2005-10-25 The Board Of Trustees Of The Leland Stanford Junior University Micromachined ultrasonic transducers and method of fabrication
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JP2005109221A (ja) * 2003-09-30 2005-04-21 Toshiba Corp ウェーハレベルパッケージ及びその製造方法
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JP5436013B2 (ja) * 2009-04-10 2014-03-05 キヤノン株式会社 機械電気変化素子
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