CN102569306B - 电气机械变换器及其制造方法 - Google Patents
电气机械变换器及其制造方法 Download PDFInfo
- Publication number
- CN102569306B CN102569306B CN201110310468.7A CN201110310468A CN102569306B CN 102569306 B CN102569306 B CN 102569306B CN 201110310468 A CN201110310468 A CN 201110310468A CN 102569306 B CN102569306 B CN 102569306B
- Authority
- CN
- China
- Prior art keywords
- silicon
- insulating barrier
- single crystal
- vibrating diaphragm
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 178
- 239000004020 conductor Substances 0.000 claims abstract description 94
- 239000004065 semiconductor Substances 0.000 claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 176
- 229910052710 silicon Inorganic materials 0.000 claims description 176
- 239000010703 silicon Substances 0.000 claims description 176
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 114
- 230000004888 barrier function Effects 0.000 claims description 103
- 238000000034 method Methods 0.000 claims description 69
- 239000012528 membrane Substances 0.000 claims description 60
- 238000000926 separation method Methods 0.000 claims description 26
- 238000010276 construction Methods 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 230000001413 cellular effect Effects 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 230000011218 segmentation Effects 0.000 claims description 4
- -1 Wherein Substances 0.000 claims 1
- 210000003850 cellular structure Anatomy 0.000 abstract 1
- 230000008569 process Effects 0.000 description 30
- 238000005530 etching Methods 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- 230000003647 oxidation Effects 0.000 description 18
- 238000007254 oxidation reaction Methods 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 230000035882 stress Effects 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 238000000227 grinding Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Pressure Sensors (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010232046A JP5677016B2 (ja) | 2010-10-15 | 2010-10-15 | 電気機械変換装置及びその作製方法 |
| JP2010-232046 | 2010-10-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102569306A CN102569306A (zh) | 2012-07-11 |
| CN102569306B true CN102569306B (zh) | 2015-06-03 |
Family
ID=44907744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110310468.7A Expired - Fee Related CN102569306B (zh) | 2010-10-15 | 2011-10-14 | 电气机械变换器及其制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8653613B2 (enExample) |
| EP (1) | EP2441530A3 (enExample) |
| JP (1) | JP5677016B2 (enExample) |
| CN (1) | CN102569306B (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5581106B2 (ja) * | 2009-04-27 | 2014-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5896665B2 (ja) * | 2011-09-20 | 2016-03-30 | キヤノン株式会社 | 電気機械変換装置の製造方法 |
| NL2009757C2 (en) * | 2012-11-05 | 2014-05-08 | Micronit Microfluidics Bv | Method for forming an electrically conductive via in a substrate. |
| CN104812504B (zh) * | 2012-11-20 | 2018-01-26 | 皇家飞利浦有限公司 | 电容性微加工换能器和制造所述电容性微加工换能器的方法 |
| US9499392B2 (en) | 2013-02-05 | 2016-11-22 | Butterfly Network, Inc. | CMOS ultrasonic transducers and related apparatus and methods |
| TWI623081B (zh) | 2013-03-15 | 2018-05-01 | 蝴蝶網路公司 | 互補式金屬氧化物半導體（ｃｍｏｓ）超音波換能器以及用於形成其之方法 |
| US9721832B2 (en) * | 2013-03-15 | 2017-08-01 | Kulite Semiconductor Products, Inc. | Methods of fabricating silicon-on-insulator (SOI) semiconductor devices using blanket fusion bonding |
| JP6381195B2 (ja) * | 2013-10-22 | 2018-08-29 | キヤノン株式会社 | 静電容量型トランスデューサ及びその作製方法 |
| CN105722609B (zh) * | 2013-11-18 | 2018-03-06 | 皇家飞利浦有限公司 | 超声换能器组件 |
| KR20150065067A (ko) * | 2013-12-04 | 2015-06-12 | 삼성전자주식회사 | 정전용량 미세가공 초음파 변환기 및 그 제조방법 |
| KR102155695B1 (ko) * | 2014-02-12 | 2020-09-21 | 삼성전자주식회사 | 전기 음향 변환기 |
| JP6545976B2 (ja) | 2014-03-07 | 2019-07-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10239093B2 (en) * | 2014-03-12 | 2019-03-26 | Koninklijke Philips N.V. | Ultrasound transducer assembly and method for manufacturing an ultrasound transducer assembly |
| US9067779B1 (en) | 2014-07-14 | 2015-06-30 | Butterfly Network, Inc. | Microfabricated ultrasonic transducers and related apparatus and methods |
| CN108698812A (zh) * | 2015-09-18 | 2018-10-23 | 韦斯伯技术公司 | 板弹簧 |
| JP6917700B2 (ja) | 2015-12-02 | 2021-08-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US11039814B2 (en) | 2016-12-04 | 2021-06-22 | Exo Imaging, Inc. | Imaging devices having piezoelectric transducers |
| US10512936B2 (en) | 2017-06-21 | 2019-12-24 | Butterfly Network, Inc. | Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections |
| US10656007B2 (en) | 2018-04-11 | 2020-05-19 | Exo Imaging Inc. | Asymmetrical ultrasound transducer array |
| US10648852B2 (en) | 2018-04-11 | 2020-05-12 | Exo Imaging Inc. | Imaging devices having piezoelectric transceivers |
| WO2019226547A1 (en) | 2018-05-21 | 2019-11-28 | Exo Imaging, Inc. | Ultrasonic transducers with q spoiling |
| EP3830877A4 (en) | 2018-08-01 | 2021-10-20 | Exo Imaging Inc. | SYSTEMS AND PROCEDURES FOR THE INTEGRATION OF ULTRASONIC CONVERTERS WITH HYBRID CONTACTS |
| WO2020190732A1 (en) * | 2019-03-15 | 2020-09-24 | Massachusetts Institute Of Technology | Microscale and nanoscale structured electromechanical transducers employing compliant dielectric spacers |
| TW202519098A (zh) | 2019-09-12 | 2025-05-01 | 美商艾克索影像股份有限公司 | 經由邊緣溝槽、虛擬樞軸及自由邊界而增強的微加工超音波傳感器(mut)耦合效率及頻寬 |
| WO2022211778A1 (en) * | 2021-03-29 | 2022-10-06 | Exo Imaging, Inc. | Trenches for the reduction of cross-talk in mut arrays |
| US11951512B2 (en) | 2021-03-31 | 2024-04-09 | Exo Imaging, Inc. | Imaging devices having piezoelectric transceivers with harmonic characteristics |
| US11819881B2 (en) | 2021-03-31 | 2023-11-21 | Exo Imaging, Inc. | Imaging devices having piezoelectric transceivers with harmonic characteristics |
| US12486159B2 (en) | 2021-06-30 | 2025-12-02 | Exo Imaging, Inc. | Micro-machined ultrasound transducers with insulation layer and methods of manufacture |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110825A (en) * | 1997-11-26 | 2000-08-29 | Stmicroelectronics, S.R.L. | Process for forming front-back through contacts in micro-integrated electronic devices |
| US6225651B1 (en) * | 1997-06-25 | 2001-05-01 | Commissariat A L'energie Atomique | Structure with a micro-electronic component made of a semi-conductor material difficult to etch and with metallized holes |
| US6836020B2 (en) * | 2003-01-22 | 2004-12-28 | The Board Of Trustees Of The Leland Stanford Junior University | Electrical through wafer interconnects |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6430109B1 (en) * | 1999-09-30 | 2002-08-06 | The Board Of Trustees Of The Leland Stanford Junior University | Array of capacitive micromachined ultrasonic transducer elements with through wafer via connections |
| CN1545484A (zh) * | 2001-08-24 | 2004-11-10 | Ф�ء�����˹��˾ | 制造微机电构件的方法 |
| US6958255B2 (en) * | 2002-08-08 | 2005-10-25 | The Board Of Trustees Of The Leland Stanford Junior University | Micromachined ultrasonic transducers and method of fabrication |
| JP2005109221A (ja) * | 2003-09-30 | 2005-04-21 | Toshiba Corp | ウェーハレベルパッケージ及びその製造方法 |
| JP4347885B2 (ja) * | 2004-06-03 | 2009-10-21 | オリンパス株式会社 | 静電容量型超音波振動子の製造方法、当該製造方法によって製造された静電容量型超音波振動子を備えた超音波内視鏡装置、静電容量型超音波プローブおよび静電容量型超音波振動子 |
| US7393758B2 (en) * | 2005-11-03 | 2008-07-01 | Maxim Integrated Products, Inc. | Wafer level packaging process |
| US8372680B2 (en) * | 2006-03-10 | 2013-02-12 | Stc.Unm | Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays |
| US7741686B2 (en) | 2006-07-20 | 2010-06-22 | The Board Of Trustees Of The Leland Stanford Junior University | Trench isolated capacitive micromachined ultrasonic transducer arrays with a supporting frame |
| JP5188188B2 (ja) * | 2008-01-15 | 2013-04-24 | キヤノン株式会社 | 容量型超音波トランスデューサの製造方法 |
| JP2009291514A (ja) * | 2008-06-09 | 2009-12-17 | Canon Inc | 静電容量型トランスデューサの製造方法、及び静電容量型トランスデューサ |
| JP5376982B2 (ja) * | 2008-06-30 | 2013-12-25 | キヤノン株式会社 | 機械電気変換素子と機械電気変換装置および機械電気変換装置の作製方法 |
| JP5436013B2 (ja) * | 2009-04-10 | 2014-03-05 | キヤノン株式会社 | 機械電気変化素子 |
| US8445304B2 (en) * | 2009-06-02 | 2013-05-21 | Micralyne Inc. | Semi-conductor sensor fabrication |
-
2010
- 2010-10-15 JP JP2010232046A patent/JP5677016B2/ja not_active Expired - Fee Related
-
2011
- 2011-09-29 US US13/248,440 patent/US8653613B2/en not_active Expired - Fee Related
- 2011-10-06 EP EP11184163.1A patent/EP2441530A3/en not_active Withdrawn
- 2011-10-14 CN CN201110310468.7A patent/CN102569306B/zh not_active Expired - Fee Related
-
2014
- 2014-01-03 US US14/146,853 patent/US8980670B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225651B1 (en) * | 1997-06-25 | 2001-05-01 | Commissariat A L'energie Atomique | Structure with a micro-electronic component made of a semi-conductor material difficult to etch and with metallized holes |
| US6110825A (en) * | 1997-11-26 | 2000-08-29 | Stmicroelectronics, S.R.L. | Process for forming front-back through contacts in micro-integrated electronic devices |
| US6836020B2 (en) * | 2003-01-22 | 2004-12-28 | The Board Of Trustees Of The Leland Stanford Junior University | Electrical through wafer interconnects |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140120646A1 (en) | 2014-05-01 |
| JP2012085239A (ja) | 2012-04-26 |
| EP2441530A2 (en) | 2012-04-18 |
| CN102569306A (zh) | 2012-07-11 |
| EP2441530A3 (en) | 2016-04-27 |
| JP5677016B2 (ja) | 2015-02-25 |
| US8653613B2 (en) | 2014-02-18 |
| US20120091543A1 (en) | 2012-04-19 |
| US8980670B2 (en) | 2015-03-17 |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150603 Termination date: 20211014 |
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| CF01 | Termination of patent right due to non-payment of annual fee |