JP5581106B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5581106B2 JP5581106B2 JP2010099455A JP2010099455A JP5581106B2 JP 5581106 B2 JP5581106 B2 JP 5581106B2 JP 2010099455 A JP2010099455 A JP 2010099455A JP 2010099455 A JP2010099455 A JP 2010099455A JP 5581106 B2 JP5581106 B2 JP 5581106B2
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- 239000004065 semiconductor Substances 0.000 title claims description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 58
- 239000000853 adhesive Substances 0.000 claims description 18
- 230000001070 adhesive effect Effects 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 158
- 239000010408 film Substances 0.000 description 57
- 238000000926 separation method Methods 0.000 description 25
- 238000004380 ashing Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
本実施の形態を、図1(A)〜図1(D)、図2(A)〜図2(C)を用いて説明する。
本実施の形態を、図3(A)〜図3(B)、図8(A)〜図8(B)、図9(A)〜図9(D)を用いて説明する。
302 半導体素子層
303 平坦化膜
304 下地層
305 保護層
306 配線
307 絶縁膜
308 接着剤
309 支持基板
311 第1の層
312 第2の層
315 スルーホール
316a 配線
316b 配線
316c 配線
321 島状半導体膜
322 ゲート絶縁膜
323a サイドウォール
323b サイドウォール
324 ゲート電極
325a TFT
325b TFT
331 島状半導体膜
332 ゲート絶縁膜
333a サイドウォール
333b サイドウォール
334 ゲート電極
341 積層構造体
342 異方性導電接着剤
343 積層構造体
345 フレキシブル基板
350 基板
351 第1の層
352 第2の層
355 スルーホール
356 配線
358 接着剤
359 支持基板
360 半導体素子層
366a 配線
366b 配線
366c 配線
401 基板
402 第1の層
403 第2の層
405 絶縁層
406 スルーホール
406a スルーホール
406b スルーホール
407 配線
408 絶縁層
409 平坦化膜
411 支持基板
421 領域
421a 領域
421b 領域
427 配線
428 絶縁層
Claims (1)
- 基板上に、タングステンまたはモリブデンを有する第1の層を形成し、
前記第1の層上に、酸化珪素を有する第2の層を形成し、
前記第2の層上に、半導体素子を形成し、
前記半導体素子上に、第1の絶縁層を形成し、
前記第1の絶縁層を貫通し、前記第1の層に達するスルーホールを形成し、
前記スルーホールの底部において露出した前記第1の層を酸化させ、
前記第1の絶縁層上及び前記スルーホール内部に、前記半導体素子と電気的に接続され、アルミニウム、または、チタンとアルミニウムの積層、または、銅を有する配線を形成した後、
前記第1の層と前記第2の層とを、前記第1の層と前記第2の層との界面から分離することによって、前記スルーホールの底部において前記配線の一部の領域を露出させ、
前記領域に接するように、異方性導電接着材を設けることを特徴とする半導体装置の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010099455A JP5581106B2 (ja) | 2009-04-27 | 2010-04-23 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009108129 | 2009-04-27 | ||
JP2009108129 | 2009-04-27 | ||
JP2010099455A JP5581106B2 (ja) | 2009-04-27 | 2010-04-23 | 半導体装置の作製方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014142057A Division JP5917618B2 (ja) | 2009-04-27 | 2014-07-10 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010278425A JP2010278425A (ja) | 2010-12-09 |
JP2010278425A5 JP2010278425A5 (ja) | 2013-03-14 |
JP5581106B2 true JP5581106B2 (ja) | 2014-08-27 |
Family
ID=42992518
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2010099455A Expired - Fee Related JP5581106B2 (ja) | 2009-04-27 | 2010-04-23 | 半導体装置の作製方法 |
JP2014142057A Active JP5917618B2 (ja) | 2009-04-27 | 2014-07-10 | 半導体装置の作製方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014142057A Active JP5917618B2 (ja) | 2009-04-27 | 2014-07-10 | 半導体装置の作製方法 |
Country Status (2)
Country | Link |
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US (1) | US8435870B2 (ja) |
JP (2) | JP5581106B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2996682B1 (fr) | 2012-10-10 | 2014-11-28 | Commissariat Energie Atomique | Procede ameliore d'interconnexion pour micro-imageur |
US9252047B2 (en) | 2014-01-23 | 2016-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd | Interconnect arrangement with stress-reducing structure and method of fabricating the same |
JP6545976B2 (ja) | 2014-03-07 | 2019-07-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6917700B2 (ja) | 2015-12-02 | 2021-08-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10586817B2 (en) * | 2016-03-24 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and separation apparatus |
US10181424B2 (en) * | 2016-04-12 | 2019-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and manufacturing method of flexible device |
KR102327117B1 (ko) * | 2016-04-22 | 2021-11-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 분리 방법 및 플렉시블 디바이스의 제작 방법 |
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JP2012216812A (ja) * | 2011-03-31 | 2012-11-08 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8481353B2 (en) * | 2011-04-14 | 2013-07-09 | Opto Tech Corporation | Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation |
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2010
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JP2010278425A (ja) | 2010-12-09 |
JP5917618B2 (ja) | 2016-05-18 |
US8435870B2 (en) | 2013-05-07 |
US20100273319A1 (en) | 2010-10-28 |
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