JP2011513946A5 - - Google Patents

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Publication number
JP2011513946A5
JP2011513946A5 JP2010547023A JP2010547023A JP2011513946A5 JP 2011513946 A5 JP2011513946 A5 JP 2011513946A5 JP 2010547023 A JP2010547023 A JP 2010547023A JP 2010547023 A JP2010547023 A JP 2010547023A JP 2011513946 A5 JP2011513946 A5 JP 2011513946A5
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JP
Japan
Prior art keywords
layer
phosphor
led device
base
transparent electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010547023A
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English (en)
Japanese (ja)
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JP2011513946A (ja
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Publication date
Priority claimed from CNB2008100264790A external-priority patent/CN100483762C/zh
Application filed filed Critical
Publication of JP2011513946A publication Critical patent/JP2011513946A/ja
Publication of JP2011513946A5 publication Critical patent/JP2011513946A5/ja
Pending legal-status Critical Current

Links

JP2010547023A 2008-02-25 2008-05-27 Led装置の製造方法 Pending JP2011513946A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNB2008100264790A CN100483762C (zh) 2008-02-25 2008-02-25 一种发光二极管器件的制造方法
PCT/CN2008/001024 WO2009105923A1 (zh) 2008-02-25 2008-05-27 一种发光二极管器件的制造方法

Publications (2)

Publication Number Publication Date
JP2011513946A JP2011513946A (ja) 2011-04-28
JP2011513946A5 true JP2011513946A5 (enExample) 2011-07-28

Family

ID=39920466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010547023A Pending JP2011513946A (ja) 2008-02-25 2008-05-27 Led装置の製造方法

Country Status (5)

Country Link
US (4) US20090215210A1 (enExample)
EP (1) EP2249403A4 (enExample)
JP (1) JP2011513946A (enExample)
CN (1) CN100483762C (enExample)
WO (1) WO2009105923A1 (enExample)

Families Citing this family (14)

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Publication number Priority date Publication date Assignee Title
CN102201426B (zh) * 2010-03-23 2016-05-04 展晶科技(深圳)有限公司 发光二极管及其制作方法
US9178107B2 (en) 2010-08-03 2015-11-03 Industrial Technology Research Institute Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same
WO2012016377A1 (en) * 2010-08-03 2012-02-09 Industrial Technology Research Institute Light emitting diode chip, light emitting diode package structure, and method for forming the same
JP2013541220A (ja) * 2010-10-27 2013-11-07 コーニンクレッカ フィリップス エヌ ヴェ 発光デバイスの製造用のラミネート支持フィルム、及びその製造方法
US8349628B2 (en) 2011-03-22 2013-01-08 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode devices
CN102829416B (zh) * 2011-06-14 2015-07-22 财团法人工业技术研究院 具有多种光形输出的发光二极管的灯具光源
TWI606618B (zh) * 2012-01-03 2017-11-21 Lg伊諾特股份有限公司 發光裝置
JP6248431B2 (ja) * 2013-06-28 2017-12-20 日亜化学工業株式会社 半導体発光装置の製造方法
KR102282141B1 (ko) 2014-09-02 2021-07-28 삼성전자주식회사 반도체 발광소자
TWI657593B (zh) * 2015-04-15 2019-04-21 晶元光電股份有限公司 發光元件及其製造方法
CN107946441A (zh) 2016-10-12 2018-04-20 亿光电子工业股份有限公司 发光装置及发光二极管封装结构
KR102611980B1 (ko) * 2016-12-14 2023-12-08 삼성전자주식회사 멀티 컬러를 구현할 수 있는 발광 소자
CN108172591B (zh) * 2018-01-05 2024-09-27 广东迅扬科技股份有限公司 一种Micro LED彩色显示阵列结构
CN109037405B (zh) * 2018-07-16 2020-11-13 厦门三安光电有限公司 微发光装置及其显示器

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6650044B1 (en) * 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
AU2002244626A1 (en) * 2002-02-14 2003-09-04 Infineon Technologies Ag Optoelectronic component with a peltier cooler
JP4374913B2 (ja) * 2003-06-05 2009-12-02 日亜化学工業株式会社 発光装置
US7675075B2 (en) * 2003-08-28 2010-03-09 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
JP2005123238A (ja) * 2003-10-14 2005-05-12 Matsushita Electric Ind Co Ltd 半導体発光装置の製造方法および半導体発光装置
JP4857596B2 (ja) * 2004-06-24 2012-01-18 豊田合成株式会社 発光素子の製造方法
JP2006024745A (ja) * 2004-07-08 2006-01-26 Matsushita Electric Ind Co Ltd Led光源
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
JP2006156837A (ja) * 2004-11-30 2006-06-15 Matsushita Electric Ind Co Ltd 半導体発光装置、発光モジュール、および照明装置
US7195944B2 (en) * 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
JP2006222288A (ja) * 2005-02-10 2006-08-24 Toshiba Corp 白色led及びその製造方法
JP2007123438A (ja) * 2005-10-26 2007-05-17 Toyoda Gosei Co Ltd 蛍光体板及びこれを備えた発光装置
JP4828226B2 (ja) * 2005-12-28 2011-11-30 新光電気工業株式会社 発光装置及びその製造方法
JP4907253B2 (ja) * 2006-08-03 2012-03-28 シャープ株式会社 注入装置、製造装置、および半導体発光装置の製造方法
TWI418054B (zh) * 2006-08-08 2013-12-01 Lg電子股份有限公司 發光裝置封裝與製造此封裝之方法

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