CN101640240A - 发光二极管制造方法 - Google Patents
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Abstract
一种发光二极管制造方法,包括以下步骤:提供一发光二极管晶片,于该发光二极管晶片的衬底上形成若干发光二极管晶粒;于发光二极管晶粒的周围形成一保护层;于保护层上沉积一电极层;去除发光二极管晶片的衬底,并于每一发光二极管晶粒上形成第二电极;去除每一发光二极管晶粒周围的保护层;于每一发光二极管晶粒的外围开设一通槽;提供一基座,将该基座组装于该电极层上;打线、密封及切割。与现有技术相比较,本发明的发光二极管制造方法无须导电架,也无须逐个取放发光二极管晶粒,采用晶片结合法及剥离法使得多个发光二极管晶粒一体式同步封装,制造方法简便且成本较低。
Description
技术领域
本发明涉及一种发光元件制造方法,尤指一种发光二极管制造方法。
背景技术
发光二极管(Light Emitting Diode,LED)具有环保、亮度高、省电、寿命长等诸多特点,将渐渐成为主要照明光源。单个发光二极管晶粒的亮度有限,需组合多个发光二极管才能满足高亮度照明需求。业内通常是将发光二极管晶粒从发光二极管晶片中切割后取出并放入导电架中,然后经过打线、灌胶等封装工艺后形成单颗发光二极管,然发光二极管晶粒的体积小,取放发光二极管晶粒过程中吸附发光二极管晶粒较为困难。
发明内容
鉴于此,有必要提供一种制造简便且成本较低的发光二极管制造方法。
一种发光二极管制造方法,包括以下步骤:提供一发光二极管晶片,该发光二极管晶片包括一衬底,于该衬底上形成若干发光二极管晶粒;于发光二极管晶粒的周围形成一保护层;于保护层上沉积一电极层,电极层与每一发光二极管晶粒电连接并作为每一发光二极管晶粒的第一电极;提供一导电板,将该导电板组装于电极层上;去除发光二极管晶片的衬底,并于每一发光二极管晶粒上形成第二电极;去除每一发光二极管晶粒周围的保护层;于每一发光二极管晶粒的外围开设一通槽,每一通槽分别上下贯通电极层及导电板;提供一基座,将该基座组装于电极层上,该基座上开设若干通孔,该若干通孔与该若干发光二极管晶粒一一对应,每一发光二极管晶粒收容于相对应的通孔中;把每一发光二极管晶粒的第二电极电连接于电极层上,并向基座的通孔内填充透光材料,该透光材料分别包覆每一发光二极管晶粒;切割使该若干发光二极管晶粒相互分离,每一发光二极管晶粒分别形成一发光二极管,该发光二极管包括一通槽、一电极层及一导电板,发光二极管的通槽使发光二极管的电极层分为相互绝缘的第一部分及第二部分,并使导电板分为相互绝缘的第一外电极及第二外电极。
与现有技术相比较,本发明的发光二极管制造方法,使得同一发光二极管晶片上的所有发光二极管晶粒一体式同步封装,无须逐个取放发光二极管晶粒,制造方法简便且成本较低。
附图说明
图1为本发明的发光二极管制造方法的一较佳实施例的流程图。
图2为图1所示方法中形成发光二极管晶粒后的局部剖面示意图。
图3为图1所示方法中形成保护层后的局部剖面示意图。
图4为图1所示方法中形成电极层后的局部剖面示意图。
图5为图1所示方法中导电板组装于电极层的局部剖面示意图。
图6为图1所示方法中翻转并去除衬底后的局部剖面示意图。
图7为图1所示方法中形成第二电极后的局部剖面示意图。
图8为图1所示方法中去除保护层后的局部剖面示意图。
图9为图1所示方法中于电极层及导电板上开通槽后的局部剖面示意图。
图10为图1所示方法中所提供的基座的局部剖面示意图。
图11为图1所示方法中将基座组装于电极层后的局部剖面示意图。
图12为图1所示方法中打线及密封后的局部剖面示意图。
图13为图12的局部俯视示意图。
图14为图1所示方法中切割后的单个发光二极管的局部剖面示意图。
图15为本发明的发光二极管制造方法的又一较佳实施例中打线及密封后的局部剖面示意图。
具体实施方式
如图1所示,本发明的发光二极管制造方法包括以下步骤:
提供一发光二极管晶片1,该发光二极管晶片1包括一衬底11,于该发光二极管晶片1上形成若干发光二极管晶粒12;
于发光二极管晶粒12周围形成一保护层13;
于保护层13上形成一电极层14;
提供一导电板15,将该导电板15组装于电极层14上;
去除发光二极管晶片1的衬底11,并于每一发光二极管晶粒12上形成第二电极122;
去除每一发光二极管晶粒12周围的保护层13;
于每一发光二极管晶粒12的外围开设通槽161,通槽161上下贯通电极层14及导电板15;
提供一基座17,将该基座17组装于该电极层14上,并使发光二极管晶粒12收容于基座17的通孔中;
打线及密封;
切割使该若干发光二极管晶粒12相互分离,每一发光二极管晶粒12分别形成一发光二极管10。
下面结合具体图示具体描述该发光二极管的制备过程。
首先,如图2所示,提供一发光二极管晶片1,该发光二极管晶片1包括一衬底11,该衬底11上生长外延层,外延层为构成p-n结的半导体,外延层的材料可为砷化镓、磷砷化镓、砷化铝镓等,衬底11的材料可为蓝宝石等,切割该外延层从而于衬底11上形成若干发光二极管晶粒12,该若干发光二极管晶粒12间隔分布于衬底11上,相邻发光二极管晶粒12之间形成间隙111。
其次,如图3所示,于发光二极管晶片1上涂布一保护层13,该保护层13可为光阻,涂布方法可采用旋布法(spin coating),采用光学微影方法于该保护层13上与发光二极管晶粒12相对应的位置处形成微孔131,该保护层13用于定义发光二极管晶粒12的第一电极图案。保护层13填充发光二极管晶粒12之间的间隙111,保护层13的顶面呈凹凸不平状且高于发光二极管晶粒12,微孔131的孔径小于发光二极管晶粒12的尺寸,从而每一发光二极管晶粒12的四周部分为保护层13所覆盖,仅有中央的部分顶面透过微孔131与外界空气接触。
再次,如图4所示,于保护层13上沉积一电极层14,该电极层14对应保护层13的微孔131所在位置向下突出并填满微孔131,电极层14的顶面为一平面,电极层14与每一发光二极管晶粒12电连接从而作为每一发光二极管晶粒12的第一电极,沉积方式可采用电子束蒸发、热蒸发或溅射法。该电极层14上进一步沉积由导电材料制成的第一结合层141,第一结合层141可由共晶合金制成,如铝硅合金或硅铜合金等。
接着,如图5所示,提供一导电板15,该导电板15由导电材料制成,该导电板15的下表面上进一步形成由导电材料制成的第二结合层151,第二结合层151可由共晶合金制成,如铝硅合金或硅铜合金等,之后将该导电板15组装于电极层14上。其中,可采用晶片接合(wafer bonding)方法将导电板15组装于电极层14上,使第一结合层141及第二结合层151作为黏合层,通过其二者表面的化学键与化学键之间结合,从而将导电板15组装于电极层14上。
再接着,如图6及图7所示,将发光二极管晶片1倒置,去除发光二极管晶片1的衬底11,使得该若干发光二极管晶粒12的底面露出,并于每一发光二极管晶粒12的底面上(即图6及图7所示的顶部)分别沉积一电极122,电极122分别与相对应的发光二极管晶粒12电连接从而作为发光二极管晶粒12的第二电极。去除衬底11的方法可采用晶片剥离法,例如激光剥离法或湿式剥离法。电极122的沉积方式可采用电镀、磁控溅射等方法。
紧接着,如图8所示,去除每一发光二极管晶粒12周围的保护层13,露出电极层14,每一发光二极管晶粒12周围于去除保护层13后形成间隙123。
接下来,如图9所示,于电极层14上开设若干通槽161,该若干通槽161与该若干发光二极管晶粒12的数量对应,每一通槽161形成于相对应发光二极管晶粒12的外侧并紧邻该发光二极管晶粒12,该若干通槽161均上下依次贯通电极层14及导电板15,通槽161内可填充绝缘材料。
然后,如图10及图11所示,提供一基座17,基座17由绝缘材料制成,将该基座17组装于该电极层14上,该基座17上开设若干通孔171,该若干通孔171与该若干发光二极管晶粒12一一对应,每一发光二极管晶粒12收容于相对应的通孔171中,每一通孔171外围的侧壁172上形成一导电柱173,每一导电柱173贯通基座17并电连接于电极层14;
之后为打线及密封,如图12所示,打线是指利用导线18把每一发光二极管晶粒12的电极122电连接于基座17的导电柱173,进而电连接于电极层14,导线18可采用金线或铝线等导电材料。密封是指向基座17的通孔171内填充透光材料19,该透光材料19分别包覆每一发光二极管晶粒12,使发光二极管晶粒12与外界隔离,还可作为透镜以提高出光率,透光材料19可采用环氧树脂、压克力、硅胶等高透光、高机械强度、强耐湿性材料,透光材料19中还可参杂荧光粉,密封时可采用模具一体式灌胶密封,适合大批量生产。
最后,如图12至图14所示,切割基座17、电极层14及导电板15,使该若干发光二极管晶粒12相互分离,每一发光二极管晶粒12分别形成一发光二极管2。发光二极管2包括一导电板21、一电极层22、一发光二极管晶粒12及一基座23,其中导电板21由导电板15切割分离而成,电极层22由电极层14切割分离而成,基座23由基座17切割分离而成。通槽161将电极层22及导电板21均一分为二,即把导电板21分为相互绝缘的第一外电极211及第二外电极212,把电极层22分为相互绝缘的第一部分221及第二部分222,其中导电板21的第一外电极211及第二外电极212分别作为发光二极管2的外接电源端,电极层22的第一部分221作为发光二极管晶粒12的第一电极并电连接于第一外电极211,发光二极管晶粒12的电极122作为发光二极管晶粒12的第二电极,电极122依次通过导线18、基座23的导电柱233(即基座17的导电柱173)、电极层22的第二部分222电连接至第二外电极212。
为了清楚说明切割过程,于图12及图13中用虚线示出切割道4以表示切割轨迹。切割道4包括若干横向切割道421、422及纵向切割道411、412,相邻的二横向切割道421、422及相邻的二纵向切割道411、412分布于每一发光二极管晶粒12的外围并构成一正方形24,该正方形24为单颗发光二极管区域,每一发光二极管晶粒12所对应的导电柱173、透光材料19及导线18均位于该正方形24内。沿切割道4切割后,相邻的二横向切割道421、422及相邻的二纵向切割道411、412使得相邻的发光二极管晶粒12相互分离,每一发光二极管晶粒12分别形成一发光二极管2。每一发光二极管晶粒12的通槽161贯通相邻的二横向切割道421、422,则通槽161使得发光二极管2的导电板21分为相互绝缘的第一外电极211及第二外电极212,亦使得发光二极管2的电极层22分为相互绝缘的第一部分221及第二部分222。
在本发明中,同一发光二极管晶片1上的所有发光二极管晶粒12无须切割后逐一取放于导电架中进行封装,而是一体式同步形成导电板15、基座17、打线及密封后,再进行切割形成完整的单颗发光二极管2,相对于现有技术而言,本发明无须吸附发光二极管晶粒12,减少工序,缩短制造时间,更适用于批量生产,降低制造成本。
图15示出本发明又一较佳实施方式,与上一实施方式不同之处在于,基座37的侧壁372上没有开设导电柱,在打线步骤中,直接利用导线18将发光二极管晶粒12的电极122电连接于电极层14。
Claims (10)
1.一种发光二极管制造方法,包括以下步骤:
提供一发光二极管晶片,该发光二极管晶片包括一衬底,于该衬底上形成若干发光二极管晶粒;
于发光二极管晶粒的周围形成一保护层;
于保护层上沉积一电极层,电极层与每一发光二极管晶粒电连接并作为每一发光二极管晶粒的第一电极;
提供一导电板,将该导电板组装于电极层上;
去除发光二极管晶片的衬底,并于每一发光二极管晶粒上形成第二电极;
去除每一发光二极管晶粒周围的保护层;
于每一发光二极管晶粒的外围开设一通槽,每一通槽上下贯通电极层及导电板;
提供一基座,将该基座组装于电极层上,该基座上开设若干通孔,该若干通孔与该若干发光二极管晶粒一一对应,每一发光二极管晶粒收容于相对应的通孔中;
把每一发光二极管晶粒的第二电极电连接于电极层上,并向基座的通孔内填充透光材料,该透光材料分别包覆每一发光二极管晶粒;
切割使该若干发光二极管晶粒相互分离,每一发光二极管晶粒分别形成一发光二极管,该发光二极管包括一通槽、一电极层及一导电板,发光二极管的通槽使发光二极管的电极层分为相互绝缘的第一部分及第二部分,并使导电板分为相互绝缘的第一外电极及第二外电极。
2.根据权利要求1所述的发光二极管制造方法,其特征在于,保护层的材料为光阻,采用旋布法及光学微影法形成保护层。
3.根据权利要求1所述的发光二极管制造方法,其特征在于,导电板通过晶片接合方法组装于电极层上。
4.根据权利要求1或3所述的发光二极管制造方法,其特征在于,还包括于电极层上沉积第一结合层,于导电板上沉积第二结合层,通过第一结合层与第二结合层相互结合而将导电板组装于电极层上,第一结合层与第二结合层均为导电材料制成。
5.根据权利要求1所述的发光二极管制造方法,其特征在于,去除衬底采用晶片剥离法。
6.根据权利要求5所述的发光二极管制造方法,其特征在于,晶片剥离法为激光剥离法或湿式剥离法。
7.根据权利要求1所述的发光二极管制造方法,其特征在于,该若干通槽中填充绝缘材料。
8.根据权利要求1所述的发光二极管制造方法,其特征在于,该基座的每一通孔的侧壁上开设一导电柱,每一导电柱电连接于电极层上,发光二极管晶粒的第二电极电通过导线电连接于与其对应的导电柱上。
9.根据权利要求1所述的发光二极管制造方法,其特征在于,发光二极管晶粒的第二电极通过导线直接电连接于电极层上。
10.根据权利要求1所述的发光二极管制造方法,其特征在于,于发光二极管晶粒的周围形成一保护层时,该保护层上与发光二极管晶粒相对应的位置处形成微孔,于保护层上沉积电极层时,该电极层一并填充微孔。
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