US20090215210A1 - Method of manufacturing light emitting diode device - Google Patents

Method of manufacturing light emitting diode device Download PDF

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Publication number
US20090215210A1
US20090215210A1 US12/351,668 US35166809A US2009215210A1 US 20090215210 A1 US20090215210 A1 US 20090215210A1 US 35166809 A US35166809 A US 35166809A US 2009215210 A1 US2009215210 A1 US 2009215210A1
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Prior art keywords
layer
chip structure
led device
flip
light
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Abandoned
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US12/351,668
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English (en)
Inventor
Ben Fan
Hsin-Chuan Weng
Kuo-Kuang Yeh
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Heshan Lide Electronic Enterprise Co Ltd
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Heshan Lide Electronic Enterprise Co Ltd
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Assigned to HE SHAN LIDE ELECTRONIC ENTERPRISE COMPANY LTD. reassignment HE SHAN LIDE ELECTRONIC ENTERPRISE COMPANY LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FAN, BEN, WENG, HSIN-CHUAN, YEH, KUO-KUANG
Publication of US20090215210A1 publication Critical patent/US20090215210A1/en
Priority to US12/611,852 priority Critical patent/US7875471B2/en
Priority to US12/615,262 priority patent/US7875472B2/en
Priority to US12/776,367 priority patent/US7875473B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

Definitions

  • the present invention relates to a light emitting diode, especially to a method of manufacturing light emitting diode device that isolates a light-emitting side from other regions of the semi-manufactured LED device, such as a wire-bonding region, for coating phosphors on the light-emitting side alone.
  • Light-emitting diodes are forward-biased P-N junction diodes made of semiconductor materials. When terminals of the PN junction diodes are biased in a forward direction, the recombination of non-equilibrium carriers (electron-hole pairs) causes an emission of light. Foregoing light-emitting process primarily corresponds to a spontaneous light-emitting process. Materials for manufacturing the LED are heavily doped and therefore form a PN junction wherein an n-type region has an excess of free electrons and a p-type region an excess of holes under a thermal equilibrium condition. A depletion region forms spontaneously across a P-N junction and prevents electrons and holes from recombining.
  • the depletion region When the p-n junction is forward-biased with a sufficient voltage, the depletion region will be narrowed and electrons can overcome a resistivity of the depletion region to cross the PN junction and inject into a side of the PN junction near the p-type region. Electrons then meet and recombine with holes and the recombination thereby results in light emission.
  • a conventional light-emitting diode is manufactured by forming a laminated structure mounted on a substrate wherein the laminated structure comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer.
  • the conventional LED may adopt different materials and structures to meet different desired wavelengths of emitted lights.
  • blue and green LEDs usually use sapphire as a substrate and GaInN epitaxial structure as a laminated structure. Because the sapphire is used as the substrate, an anode and a cathode of the conventional light-emitting diode are formed at the same side of the substrate.
  • FIG. 1 As reference to FIG.
  • an n-type GaN layer ( 5 ), a light-emitting layer ( 4 ), a p-type GaN layer ( 3 ) and a transparent electrode layer ( 2 ) are sequentially formed on a sapphire substrate ( 6 ).
  • An anode ( 1 ) and a cathode ( 7 ) are respectively formed on the transparent electrode layer ( 2 ) and the n-type GaN layer ( 5 ).
  • the sapphire substrate ( 6 ) is weak at heat dissipating and a heat-conductive structure is disposed at a distance from the light-emitting layer ( 4 ). Therefore the conventional LEDs are limited to be manufactured into small-area ones with low power, such as one LED having an area of 0.3 mm ⁇ 0.3 mm with an operating current at 20 mA.
  • a conventional LED device having a flip chip structure gradually replaces foregoing conventional LED device as a high power LED device.
  • a back side of a flip-chip ( 8 ) functions as a light-emitting side, and electrodes at a front side of the flip-chip ( 8 ) is attached to a heat-sink side of a silicon substrate ( 9 ) wherein the silicon substrate ( 9 ) functions as a heat-conductive structure. Since the flip-chip ( 8 ) are close to the silicon substrate ( 9 ), a heat-dissipating efficiency is enhanced. Therefore, area of an LED device can be increased to 1 mm ⁇ 1 mm, operating current can be achieved to 300 or 500 mA and then the LED device can be provided with a power up to 1 Watt.
  • High power LED devices are mainly applied to white light illumination.
  • a technique of manufacturing white LED devices usually requires a package technique of packaging phosphors.
  • phosphor coating is hard to control and uneven white light illumination may occur to influence color temperature and coordinate of emitted white lights, and thereby lead to a package yield decrease.
  • package defect is particularly obvious to a high power white LED device.
  • the present invention provides a method of manufacturing light-emitting diode device to mitigate or obviate the aforementioned problems.
  • the main objective of the invention is to provide a method of manufacturing light-emitting diode (LED) device.
  • the method in accordance with the present invention comprises steps of:
  • the LED device is a high-power white LED device.
  • the LED device has a flip-chip structure or a vertical chip structure.
  • Another objective of the invention is to provide a method of manufacturing light-emitting diode device having a flip-chip structure.
  • the method in accordance with the present invention comprises steps of:
  • each of the at least one flip-chip structure comprising
  • a roughened layer having a rough surface is disposed between the transparent electrode layer and the phosphor layer.
  • the LED device is a high-power white LED device.
  • Another objective of the invention is to provide a method of manufacturing light-emitting diode device having a flip chip structure.
  • the method in accordance with the present invention comprises steps of:
  • a metal joint layer is disposed between the at least one flip-chip structure and the top of the base, and a periphery part of the metal joint layer surrounds the at least one flip-chip structure, each of the at least one flip-chip structure comprising
  • a roughened layer having a rough surface is disposed between the n-type semiconductor layer and the phosphor layer.
  • the LED device is a high-power white LED device.
  • the other objective of the invention is to provide a method of manufacturing light-emitting diode device having a vertical chip structure.
  • the method in accordance with the present invention comprises steps of:
  • each of the at least one vertical chip structure comprising a p side electrode, a p-type semiconductor layer, a light-emitting layer, a n-type semiconductor layer and a transparent electrode layer being sequentially disposed on the base, wherein the transparent electrode layer functions as a light-emitting side and a wire-bonding region is disposed on a part of the transparent electrode layer;
  • a roughened layer having a rough surface is disposed between the transparent electrode layer and the phosphor layer.
  • the LED device is a high-power white LED device.
  • the method of the present invention uses partition panels to isolate the light-emitting side from other regions, such as the wire-bonding region or the metal joint layer, for coating phosphors on the light-emitting side alone. Therefore, the white LED device can be directly manufactured without using a phosphor package technique, and thereby the whole manufacturing process of white LED device is simplified.
  • FIG. 1 is a schematic cross sectional side view of a conventional blue and green light-emitting diode in accordance with the prior art
  • FIG. 2 is a schematic cross sectional side view of a conventional light-emitting diode device adopting a flip-chip structure in accordance with the prior art
  • FIG. 3 is a schematic plane view of a partition panel that is used when applying a first embodiment of a method in accordance with the present invention to manufacture a light-emitting diode device having a flip chip structure;
  • FIG. 4 is a schematic cross sectional side view of manufacturing the light-emitting diode device having a flip chip structure with the partition panel shown in FIG. 3 by the first embodiment of the method;
  • FIG. 5 is a schematic plane view of a partition panel that is used when applying a second embodiment of the method in accordance with the present invention to manufacture a light-emitting diode device having another flip chip structure;
  • FIG. 6 is a schematic cross sectional side view of manufacturing the light-emitting diode device having the another flip chip structure with the partition panel shown in FIG. 5 by the second embodiment of the method in accordance with the present invention
  • FIG. 7 is a schematic cross sectional side view of a partition panel that is used when applying a third embodiment of the method in accordance with the present invention to manufacture a light-emitting diode device having a vertical chip structure;
  • FIG. 8 is a schematic cross sectional side view of manufacturing the light-emitting diode device having a vertical chip structure with the partition panel shown in FIG. 7 by the third embodiment of the method in accordance with the present invention.
  • a partition panel to isolate a light-emitting side of a light-emitting diode (LED) device from other regions like a wire-bonding region and coating phosphors alone on the light-emitting side during a phosphor-coating process can improve uniformity of the phosphor coating and omit a phosphor package technique of a package process.
  • the present invention can be applied in manufacturing LED device having a flip chip structure or a vertical chip structure.
  • FIG. 3 is a schematic plane view of a partition panel that is used when applying a first embodiment of a method in accordance with the present invention to manufacture a light-emitting diode device having a flip chip structure.
  • FIG. 4 is a schematic cross sectional side view of manufacturing the light-emitting diode device having a flip chip structure with the partition panel shown in FIG. 3 by the first embodiment of the method.
  • At least one flip chip structure having a transparent substrate ( 8 ) is mounted on a top of a base ( 9 ) with a topside of the at least one flip chip structure facing the base ( 9 ).
  • the base ( 9 ) may be composed of materials selected from the group consisting of silicon, aluminum nitride, copper, gallium nitride, zinc oxide and combinations.
  • the transparent substrate ( 8 ) is mounted on a backside of the flip chip structure and may be made of sapphire.
  • a transparent electrode layer ( 10 ) functioning as a light-emitting side of the at least one flip chip structure is disposed on a back surface of the transparent substrate ( 8 ).
  • a roughened layer ( 14 ) having a rough surface may be selectively disposed on the transparent electrode layer ( 10 ) to enhance adhesion of phosphors when coating the phosphors to the at least one flip chip structure.
  • a wire-bonding region ( 13 ) is disposed on the top of the base ( 9 ) and surrounds the flip chip structure.
  • a partition panel ( 12 ) is disposed on the wire-bonding region ( 13 ) to isolate the transparent electrode layer ( 10 ) functioning as a light-emitting side from the wire-bonding region ( 13 ).
  • FIG. 3 shows a plane view of a partition panel ( 12 ) being applied in multiple flip chip structures.
  • the partition panel ( 12 ) has multiple openings being respectively aligned to the multiple flip chip structures. Each opening has a gauge corresponding to a size of each flip chip structure.
  • Slurry of phosphors is directly coated on the transparent electrode layer ( 10 ) and may be on the roughened layer ( 14 ) by spin coating or instillation coating. Evaporating solvents of the slurry by heating solidifies the phosphors and thereby forms a phosphor layer ( 11 ).
  • the phosphors can be evenly coated and solidified on the light-emitting side of the flip chip structure. Therefore adopting a phosphor package technique during a package process can be avoided.
  • the partition panel ( 12 ) will be removed and then the base ( 9 ) will be cut into sections to form at least one single-unit LED device having a flip chip structure.
  • the first embodiment of the method in accordance with the present invention comprises steps of:
  • each of the at least one flip chip structure comprising a transparent substrate and a transparent electrode layer being mounted on a back surface of the transparent substrate;
  • FIG. 5 is a schematic plane view of a partition panel that is used when applying a second embodiment of the method in accordance with the present invention to manufacture a light-emitting diode device having another flip chip structure.
  • FIG. 6 is a schematic cross sectional side view of manufacturing the light-emitting diode device having the another flip chip structure with the partition panel shown in FIG. 5 by the second embodiment of the method in accordance with the present invention.
  • At least one flip chip structure is mounted on a top of a base ( 20 ) through a metal joint layer ( 21 ).
  • the base ( 20 ) may be composed of materials selected from the group consisting of silicon, aluminum nitride, copper, gallium nitride, zinc oxide and combinations.
  • a periphery part of the metal joint layer ( 22 ) surrounds the at least one flip chip structure.
  • the at least one flip chip structure comprises a reflective metal layer ( 22 ) being opposite to the metal joint layer ( 21 ) and a light-emitting laminated structure.
  • the light-emitting structure comprises a p-type semiconductor layer ( 23 ), a quantum-well emission layer ( 24 ) and an n-type semiconductor layer ( 25 ) being sequentially disposed on the reflective metal layer ( 22 ).
  • the p-type semiconductor layer ( 23 ) may be implemented as p-type gallium nitride.
  • the n-type semiconductor layer ( 25 ) may be implemented as n-type gallium nitride.
  • the flip chip structure in FIG. 6 differs from the flip chip structure in FIG. 4 by having the transparent substrate removed.
  • a roughened layer ( 28 ) having a rough surface may be selectively disposed on the n-type semiconductor layer ( 25 ) to enhance adhesion of phosphors when coating the phosphors to the at least one flip chip structure.
  • a partition panel ( 27 ) is disposed on the periphery part of the metal joint layer ( 22 ) to isolate the n-type semiconductor layer ( 25 ) functioning as a light-emitting side from the periphery part of the metal joint layer ( 22 ).
  • the partition panel ( 27 ) has multiple openings being respectively aligned to the at least one flip chip structure. Each opening has a gauge corresponding to a plane size of the n-type semiconductor layer ( 25 ).
  • Slurry of phosphors is directly coating on the n-type semiconductor layer ( 25 ) and may be on the roughened layer ( 28 ) by spin coating or instillation coating. Evaporating solvents of the slurry by heating solidifies the phosphors and thereby forms a phosphor layer ( 26 ). After forming the phosphor layer ( 26 ), the partition panel ( 27 ) will be removed and then the base ( 20 ) will be cut into sections to form at least one single-unit LED device having a flip chip structure.
  • the phosphors can be evenly coated and solidified on the light-emitting side of the flip chip structure. Therefore adopting a phosphor package technique during a package process can be avoided.
  • the second embodiment of the method in accordance with the present invention comprises steps of:
  • each of the at least one flip chip structure comprising a reflective metal layer being opposite to the metal joint layer and a n-type semiconductor layer being disposed on the reflective metal layer;
  • FIG. 7 is a schematic cross sectional side view of a partition panel that is used when applying a third embodiment of the method in accordance with the present invention to manufacture a light-emitting diode device having a vertical chip structure.
  • FIG. 8 is a schematic cross sectional side view of manufacturing the light-emitting diode device having a vertical chip structure with the partition panel shown in FIG. 7 by the third embodiment of the method in accordance with the present invention.
  • At least one vertical chip structure comprises a p side electrode ( 33 ), a p-type semiconductor layer ( 34 ), a light-emitting layer ( 41 ), a n-type semiconductor layer ( 35 ) and a transparent electrode layer ( 36 ) being disposed on a base ( 32 ) in sequence.
  • the transparent electrode layer ( 36 ) functions as a light-emitting side of the vertical structure.
  • a roughened layer ( 40 ) having a rough surface may be selectively disposed on the transparent electrode layer ( 36 ) to enhance adhesion of phosphors when coating the phosphors to the at least one vertical chip structure.
  • a wire-bonding region ( 39 ) is disposed on a part of the transparent electrode layer ( 36 ) and may be on a part of the rough surface of the roughened layer ( 40 ).
  • FIG. 7 shows a plane view of a partition panel ( 38 ) being applied in multiple vertical chip structures mounted on the base ( 32 ).
  • the partition panel ( 38 ) differs from the partition panel ( 12 , 27 ) by having extensions (A) for respectively covering each wire-bonding region ( 39 ) to isolate each wire-bonding region ( 39 ) from the rest of the transparent electrode layer ( 36 ).
  • the partition panel ( 38 ) has multiple openings being respectively aligned to the multiple vertical chip structures. Each opening corresponds in shape and in size to the light-emitting side of each flip chip structure.
  • Slurry of phosphors is directly coating on the light-emitting side by spin coating or instillation coating. Evaporating solvents of the slurry by heating solidifies the phosphors and thereby forms a phosphor layer ( 37 ). After forming the phosphor layer ( 37 ), the partition panel ( 38 ) will be removed and then the base ( 32 ) will be cut into sections to form at least one single-unit LED device having a vertical chip structure. Through foregoing step, the phosphors can be evenly coated and solidified on the light-emitting side of the vertical chip structure. Therefore adopting a phosphor package technique during a package process can be avoided.
  • the third embodiment of the method in accordance with the present invention comprises steps of:
  • each of the at least one vertical chip structure comprising a p side electrode, a p-type semiconductor layer, a light-emitting layer, a n-type semiconductor layer and a transparent electrode layer being sequentially disposed on the base, wherein a wire-bonding region is disposed on a part of the transparent electrode layer;
  • the present invention can also be applied in other LED device having other kind of chip structure, especially can be applied in high power LED device having a phosphor layer.
  • a partition panel to isolate a light-emitting side of a light-emitting diode (LED) device from other regions like a wire-bonding region and thereby coating phosphors alone on the light-emitting side during a phosphor-coating process can improve uniformity of the phosphors.
  • uniformity of color temperature and coordinate of white lights can be effectively controlled. Therefore, the white LED devices can be directly manufactured without adopting a phosphor package technique, and thereby a package process of the white LED device is simplified.

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US12/611,852 US7875471B2 (en) 2008-02-25 2009-11-03 Method of manufacturing light emitting diode device
US12/615,262 US7875472B2 (en) 2008-02-25 2009-11-09 Method of manufacturing light emitting diode device
US12/776,367 US7875473B2 (en) 2008-02-25 2010-05-07 Method of manufacturing light emitting diode device

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CNB2008100264790A CN100483762C (zh) 2008-02-25 2008-02-25 一种发光二极管器件的制造方法
CN200810026479.0 2008-02-25

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US12/615,262 Division US7875472B2 (en) 2008-02-25 2009-11-09 Method of manufacturing light emitting diode device
US12/776,367 Division US7875473B2 (en) 2008-02-25 2010-05-07 Method of manufacturing light emitting diode device

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US12/611,852 Expired - Fee Related US7875471B2 (en) 2008-02-25 2009-11-03 Method of manufacturing light emitting diode device
US12/615,262 Expired - Fee Related US7875472B2 (en) 2008-02-25 2009-11-09 Method of manufacturing light emitting diode device
US12/776,367 Expired - Fee Related US7875473B2 (en) 2008-02-25 2010-05-07 Method of manufacturing light emitting diode device

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US12/615,262 Expired - Fee Related US7875472B2 (en) 2008-02-25 2009-11-09 Method of manufacturing light emitting diode device
US12/776,367 Expired - Fee Related US7875473B2 (en) 2008-02-25 2010-05-07 Method of manufacturing light emitting diode device

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US (4) US20090215210A1 (enExample)
EP (1) EP2249403A4 (enExample)
JP (1) JP2011513946A (enExample)
CN (1) CN100483762C (enExample)
WO (1) WO2009105923A1 (enExample)

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