JP2011513946A - Ｌｅｄ装置の製造方法 - Google Patents

Ｌｅｄ装置の製造方法 Download PDF

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Publication number
JP2011513946A
JP2011513946A JP2010547023A JP2010547023A JP2011513946A JP 2011513946 A JP2011513946 A JP 2011513946A JP 2010547023 A JP2010547023 A JP 2010547023A JP 2010547023 A JP2010547023 A JP 2010547023A JP 2011513946 A JP2011513946 A JP 2011513946A
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JP
Japan
Prior art keywords
layer
phosphor
led device
flip chip
chip structure
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Pending
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JP2010547023A
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English (en)
Japanese (ja)
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JP2011513946A5 (enExample
Inventor
樊邦弘
翁新川
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鶴山麗得電子實業有限公司
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Application filed by 鶴山麗得電子實業有限公司 filed Critical 鶴山麗得電子實業有限公司
Publication of JP2011513946A publication Critical patent/JP2011513946A/ja
Publication of JP2011513946A5 publication Critical patent/JP2011513946A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
JP2010547023A 2008-02-25 2008-05-27 Ｌｅｄ装置の製造方法 Pending JP2011513946A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNB2008100264790A CN100483762C (zh) 2008-02-25 2008-02-25 一种发光二极管器件的制造方法
PCT/CN2008/001024 WO2009105923A1 (zh) 2008-02-25 2008-05-27 一种发光二极管器件的制造方法

Publications (2)

Publication Number Publication Date
JP2011513946A true JP2011513946A (ja) 2011-04-28
JP2011513946A5 JP2011513946A5 (enExample) 2011-07-28

Family

ID=39920466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010547023A Pending JP2011513946A (ja) 2008-02-25 2008-05-27 Ｌｅｄ装置の製造方法

Country Status (5)

Country Link
US (4) US20090215210A1 (enExample)
EP (1) EP2249403A4 (enExample)
JP (1) JP2011513946A (enExample)
CN (1) CN100483762C (enExample)
WO (1) WO2009105923A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015012143A (ja) * 2013-06-28 2015-01-19 日亜化学工業株式会社 半導体発光装置およびその製造方法

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* Cited by examiner, † Cited by third party
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CN102201426B (zh) * 2010-03-23 2016-05-04 展晶科技(深圳)有限公司 发光二极管及其制作方法
US9178107B2 (en) 2010-08-03 2015-11-03 Industrial Technology Research Institute Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same
WO2012016377A1 (en) 2010-08-03 2012-02-09 Industrial Technology Research Institute Light emitting diode chip, light emitting diode package structure, and method for forming the same
EP2633554A1 (en) * 2010-10-27 2013-09-04 Koninklijke Philips Electronics N.V. Laminate support film for fabrication of light emitting devices and method its fabrication
US8349628B2 (en) 2011-03-22 2013-01-08 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode devices
CN102829416B (zh) * 2011-06-14 2015-07-22 财团法人工业技术研究院 具有多种光形输出的发光二极管的灯具光源
TWI606618B (zh) * 2012-01-03 2017-11-21 Ｌｇ伊諾特股份有限公司 發光裝置
KR102282141B1 (ko) 2014-09-02 2021-07-28 삼성전자주식회사 반도체 발광소자
TWI657593B (zh) * 2015-04-15 2019-04-21 晶元光電股份有限公司 發光元件及其製造方法
CN107946441A (zh) * 2016-10-12 2018-04-20 亿光电子工业股份有限公司 发光装置及发光二极管封装结构
KR102611980B1 (ko) * 2016-12-14 2023-12-08 삼성전자주식회사 멀티 컬러를 구현할 수 있는 발광 소자
CN108172591B (zh) * 2018-01-05 2024-09-27 广东迅扬科技股份有限公司 一种Micro LED彩色显示阵列结构
CN112086548A (zh) * 2018-07-16 2020-12-15 厦门三安光电有限公司 微发光装置及其显示器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004363343A (ja) * 2003-06-05 2004-12-24 Nichia Chem Ind Ltd 発光装置およびその形成方法
JP2005123238A (ja) * 2003-10-14 2005-05-12 Matsushita Electric Ind Co Ltd 半導体発光装置の製造方法および半導体発光装置
JP2006041479A (ja) * 2004-06-24 2006-02-09 Toyoda Gosei Co Ltd 発光素子およびその製造方法
JP2006222288A (ja) * 2005-02-10 2006-08-24 Toshiba Corp 白色ｌｅｄ及びその製造方法

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US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6650044B1 (en) * 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
DE10296494D2 (de) * 2002-02-14 2005-07-07 Infineon Technologies Ag Optoelektronische Baugruppe mit Peltierkühlung
EP1658642B1 (en) * 2003-08-28 2014-02-26 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
JP2006024745A (ja) * 2004-07-08 2006-01-26 Matsushita Electric Ind Co Ltd Ｌｅｄ光源
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
JP2006156837A (ja) * 2004-11-30 2006-06-15 Matsushita Electric Ind Co Ltd 半導体発光装置、発光モジュール、および照明装置
US7195944B2 (en) * 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
JP2007123438A (ja) * 2005-10-26 2007-05-17 Toyoda Gosei Co Ltd 蛍光体板及びこれを備えた発光装置
JP4828226B2 (ja) * 2005-12-28 2011-11-30 新光電気工業株式会社 発光装置及びその製造方法
JP4907253B2 (ja) * 2006-08-03 2012-03-28 シャープ株式会社 注入装置、製造装置、および半導体発光装置の製造方法
TWI418054B (zh) * 2006-08-08 2013-12-01 Ｌｇ電子股份有限公司 發光裝置封裝與製造此封裝之方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004363343A (ja) * 2003-06-05 2004-12-24 Nichia Chem Ind Ltd 発光装置およびその形成方法
JP2005123238A (ja) * 2003-10-14 2005-05-12 Matsushita Electric Ind Co Ltd 半導体発光装置の製造方法および半導体発光装置
JP2006041479A (ja) * 2004-06-24 2006-02-09 Toyoda Gosei Co Ltd 発光素子およびその製造方法
JP2006222288A (ja) * 2005-02-10 2006-08-24 Toshiba Corp 白色ｌｅｄ及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015012143A (ja) * 2013-06-28 2015-01-19 日亜化学工業株式会社 半導体発光装置およびその製造方法

Also Published As

Publication number Publication date
US20090215210A1 (en) 2009-08-27
EP2249403A1 (en) 2010-11-10
US20100216265A1 (en) 2010-08-26
HK1122650A1 (zh) 2009-05-22
US7875473B2 (en) 2011-01-25
EP2249403A4 (en) 2013-03-06
US20100055814A1 (en) 2010-03-04
US7875472B2 (en) 2011-01-25
CN100483762C (zh) 2009-04-29
US20100047940A1 (en) 2010-02-25
CN101237015A (zh) 2008-08-06
US7875471B2 (en) 2011-01-25
WO2009105923A1 (zh) 2009-09-03

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