Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/851—Wavelength conversion means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/10—Bump connectors ; Manufacturing methods related thereto
  • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
  • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/12—Passive devices, e.g. 2 terminal devices
  • H01L2924/1203—Rectifying Diode
  • H01L2924/12036—PN diode
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/12—Passive devices, e.g. 2 terminal devices
  • H01L2924/1204—Optical Diode
  • H01L2924/12041—LED
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/01—Manufacture or treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/01—Manufacture or treatment
  • H10H20/036—Manufacture or treatment of packages
  • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

Definitions

• This invention relates to a method of fabricating a light emitting diode device, and more particularly to a method of fabricating a light emitting diode device in which a light emitting surface is separated from other regions such as a bonding wire region by a spacer to coat only phosphor on the light emitting surface.
• LEDs Light-emitting diodes
• the luminescence mechanism is that when a forward current is injected at both ends of the PN junction, the injected unbalanced carriers (electron-hole pairs) recombine in the diffusion process, and the emission process mainly corresponds to the spontaneous emission process of the light.
• the material for fabricating the semiconductor light-emitting diode is heavily doped, and the N region in the thermal equilibrium state has many electrons with high mobility, and the P region has more holes with lower mobility. Due to the limitation of the PN junction barrier layer, under normal conditions, the two cannot naturally recombine.
• the electrons in the conduction band of the trench region can escape the barrier of the PN junction and enter the side of the P region. Then, in the vicinity of the PN junction slightly to the side of the P region, when the electrons in the high energy state meet the holes, a luminescent composite is generated. The light emitted by this luminescent composite is spontaneous radiation.
• a conventional light emitting diode is fabricated by epitaxially growing a stacked structure including a layer of an n-type semiconductor material, a layer of a light-emitting layer, and a layer of a P-type semiconductor material on a substrate.
• the materials and structures used for the light emitting diode are also different.
• sapphire is usually used as the substrate, and gallium indium nitride epitaxial structure is used as the stacked structure.
• the cathode and the anode of the light emitting diode are both disposed on the front side.
• an n-type gallium nitride layer 5, a light-emitting layer 4, a p-type gallium nitride layer 3, and a transparent electrode 2 are sequentially formed on the sapphire substrate 6.
• the anode 1 and the cathode 7 are formed on the transparent electrode 2 and the n-type gallium nitride layer 5, respectively.
• the conventional light emitting diode can only be manufactured to a small area and low power, for example, 0.3 mm ⁇ 0.3 mm and 20 mA. The current used.
• flip-chip LED devices Due to the ever-increasing requirements for the luminous efficiency and brightness of light-emitting diodes, flip-chip LED devices have gradually replaced the conventional types of light-emitting diode devices described above as high-power LED devices.
• the back surface of the flip chip 8 is used as a light emitting surface, and the electrode on the front surface of the chip 8 is bonded to the heat sink region of the silicon substrate 9 as a heat conductive structure. Therefore, the heat sinking regions of the flip chip 8 and the substrate 9 are close to each other, and the heat dissipation effect is increased.
• the area of the device can be increased to 1 sec X I mm and the current can be used up to 300 or 500 mA with a power of 1 W.
• High-power LED devices are mainly used for white light illumination.
• the manufacturing process of white light emitting diode devices is usually required
• a method of fabricating a light emitting diode device which separates a light emitting surface of a light emitting diode from other regions such as a squall line region by using a partitioning baffle, thereby only illuminating the phosphor in a process step of coating the phosphor Coating on the light emitting surface makes it possible to omit the phosphor packaging process in the packaging process.
• the light emitting diode device is a high power white light emitting diode device.
• the present invention can be applied to a light emitting diode device of a flip chip structure or a vertical structure.
• a method of fabricating a light emitting diode device wherein the light emitting diode device is a flip chip structure, the method comprising: attaching at least one flip chip to a front surface of the substrate, and separating the baffle Provided on the ⁇ line region such that the wire bonding region is separated from the back surface of the transparent substrate of the chip as the light emitting surface, the bonding wire region is disposed on the front surface of the substrate and located at the periphery of the chip; Directly coated on the light-emitting surface by a coating method; curing the phosphor by heating the solvent in the slurry containing the phosphor; removing the separation barrier; and dividing the substrate to form a separate flip-chip structure light-emitting diode Device.
• a method of fabricating a light emitting diode device wherein the light emitting diode device is a vertical structure
• the method comprising: attaching at least one vertical structure chip structure on a front surface of the substrate, the chip structure including a n-side electrode, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a transparent electrode layer, which are sequentially disposed as a light-emitting surface of the chip structure, and a wire bonding region is disposed on a portion of the transparent electrode layer; a baffle is disposed on the wire bonding region to separate the ⁇ line region from the exposed transparent electrode layer as the chip structure; the phosphor-containing slurry is directly coated on the transparent electrode layer by a coating method; Evaporating the solvent in the phosphor-containing slurry to cure the phosphor, thereby forming a phosphor layer; removing the separation barrier; and cutting the substrate to form a separate vertical structure light
• a method of fabricating a light emitting diode device comprising: bonding at least one flip chip structure to a front side of the substrate through a metal bonding layer And a portion of the metal bonding layer is disposed under the peripheral portion of the chip structure, and the partitioning baffle is used such that the metal bonding layer of the portion is separated from the n-type semiconductor layer formed on the back surface of the chip structure;
• the slurry of the powder is directly coated on the n-type semiconductor layer of the chip structure by a coating method; the phosphor is cured by heating the solvent in the slurry containing the phosphor; the separation baffle is removed; and the substrate is cut A separate flip-chip structure light emitting diode device is formed.
• the above manufacturing method further comprises providing a surface roughening layer between the phosphor layer and the flip chip or the vertically structured chip, thereby increasing the adhesion of the phosphor
• a white light emitting diode device can be directly fabricated without requiring a phosphor packaging process in a packaging process, thereby simplifying the manufacturing process of the white light emitting diode device.
• FIG. 1 is a schematic structural view of a conventional light emitting diode emitting blue light and green light;
• FIG. 2 is a schematic structural view of a light emitting diode device using a flip chip structure
• FIG. 3 is a plan view showing a partitioning baffle used in a process for manufacturing a flip-chip structure of a light emitting diode device
• FIG. 4 is a schematic cross-sectional view showing a light emitting diode device using the partitioning baffle shown in FIG. 3 to manufacture a flip chip structure
• 5 is a plan view showing a partitioning baffle used in a process of manufacturing another flip-chip structure light emitting diode
• FIG. 6 is a view showing another flip chip structure light emitting diode manufactured using the partitioning baffle shown in FIG. BRIEF DESCRIPTION OF THE DRAWINGS Fig.
• FIG. 7 is a plan view showing a partitioning shutter used in a process for manufacturing a light emitting diode of a vertical structure
• Fig. 8 is a schematic cross-sectional view showing a light emitting diode of a vertical structure using the partitioning shutter shown in Fig. 7.
• the light-emitting surface of the light-emitting diode device is separated from other regions such as the squall line region by the partitioning baffle, thereby applying only the phosphor powder to the light-emitting surface in the process step of coating the phosphor, thereby improving the phosphor coating Uniformity of the cloth, and the phosphor packaging process steps in the packaging process can be omitted.
• the present invention can be applied to a light emitting diode device of a flip chip structure or a vertical structure.
• Fig. 3 is a plan view showing a partitioning baffle used in the process of manufacturing a light emitting diode device of a flip chip structure.
• 4 is a schematic cross-sectional view showing a light emitting diode device in which a flip chip structure is fabricated using the spacer plate shown in FIG.
• a flip chip structure is fabricated using the spacer plate shown in FIG.
• at least one chip structure having a transparent substrate 8 made of, for example, sapphire is attached in the form of a flip chip to a material such as silicon, aluminum nitride, copper, gallium nitride or zinc oxide.
• a transparent electrode layer 10 is provided on the back surface of the transparent substrate 8 as a light-emitting surface of the chip structure.
• the surface roughening layer 14 may be provided on the transparent electrode layer 10. Of course, the surface roughening layer 14 may not be provided as needed.
• the twist line region 13 is disposed at the periphery of the chip structure.
• the partitioning baffle 12 is disposed on the twist line region 13 such that the wire bonding region is spaced apart from the transparent electrode layer 10 as a light exiting surface.
• Fig. 3 is a plan view showing a partitioning baffle used when a plurality of chip structures in the form of flip chip are formed on the substrate 9. The size of the opening of the partitioning baffle corresponds to the size of the chip structure.
• the phosphor-containing slurry is directly applied onto the surface roughened layer 14 by a coating method such as dripping or spin coating.
• the phosphor is cured by evaporating the solvent in the slurry containing the phosphor to form the phosphor layer 11.
• the partitioning baffle 12 is removed.
• the phosphor can be uniformly coated and cured on the light emitting surface of the chip structure, so that the packaging process using the phosphor in the packaging process can be avoided.
• the substrate 9 is cut to obtain a separate flip-chip structure light emitting diode device.
• Fig. 5 is a plan view showing a partitioning baffle used in the process of manufacturing another flip-chip structure light emitting diode device.
• Fig. 6 is a schematic cross-sectional view showing another flip-chip structure light-emitting diode device fabricated using the partitioning shutter shown in Fig. 5.
• at least one chip structure having no transparent substrate is bonded to the front surface of the substrate 20 made of a material such as silicon, aluminum nitride, copper, gallium nitride or zinc oxide through the bonding metal layer 21.
• the chip structure includes a reflective metal layer 22 disposed opposite the bonding metal layer 21 and a light emitting laminate disposed in sequence.
• the light-emitting stack includes a p-type semiconductor 23 such as P-type gallium nitride, a quantum well light-emitting layer 24, and an n-type semiconductor layer 25 such as n-type gallium nitride.
• the chip structure shown in Fig. 6 is different from the chip structure shown in Fig. 4 in that the chip structure of Fig. 6 has been peeled off from a transparent substrate such as sapphire.
• a surface roughening layer 28 may be provided on the ri type semiconductor layer 25. Of course, the surface roughening layer 28 may not be provided as needed.
• the partitioning shutter 27 is disposed on the bonding metal layer 21 provided on the periphery of the light emitting structure such that the bonding metal layer 21 of the portion is spaced apart from the n-type semiconductor layer 25 as a light emitting surface.
• the size of the opening of the partitioning baffle 27 corresponds to the planar size of the n-type semiconductor layer 25.
• the phosphor-containing slurry is directly applied onto the surface roughened layer 28 by a coating method such as dripping, spin coating or the like.
• the phosphor layer 26 is formed by heating the solvent in the slurry containing the phosphor to evaporate the phosphor. After that, the partition baffle 27 is removed.
• the silicon substrate 20 is cut to obtain a separate flip-chip structure light emitting diode device.
• the phosphor can be uniformly coated and cured on the light-emitting surface of the chip, so that the packaging process using the phosphor in the packaging process can be avoided.
• Fig. 7 is a plan view showing a partitioning baffle used in the process of manufacturing a vertically structured light emitting diode.
• Figure 8 is a cross-sectional view showing a light emitting diode device in which a vertical structure is fabricated using the partitioning shutter shown in Figure 7.
• the chip structure includes an n-side electrode 33, an n-type semiconductor layer 34, a light-emitting layer 41, a p-type semiconductor layer 35, and a transparent electrode layer 36 which are sequentially disposed above the substrate 32.
• the transparent electrode layer 36 serves as a light emitting surface.
• the surface roughening layer 40 may be provided on the transparent electrode layer 36.
• Fig. 7 is a plan view showing the partitioning shutter 38 employed when a plurality of vertically structured chip structures are formed on the substrate 32, unlike the partitioning shutters 12 and 27 shown in Figs. 3 and 5, which are shown in Fig. 7.
• the dividing baffle 38 also has a partial turn that separates the twisted line region 39.
• the shape and size of the opening of the partitioning baffle 38 and the shape of the light emitting surface as the chip structure The shape and size correspond.
• the phosphor-containing slurry is directly applied onto the light-emitting surface by a coating method such as dripping or spin coating.
• the phosphor is cured by heating the solvent in the slurry containing the phosphor to form the phosphor layer 37. Thereafter, the partition baffle 38 is removed.
• the phosphor can be uniformly coated and cured on the light emitting surface of the chip, so that the packaging process of using the phosphor in the packaging process can be avoided.
• the substrate 32 is cut to obtain a separate vertical structure light emitting diode device.
• the present invention is also applicable to other structure light emitting diode devices, and particularly to a high power white light diode device having a phosphor layer.
• the light-emitting surface of the light-emitting diode is separated from the wire-bonding region by the partitioning baffle, so that only the phosphor powder is applied to the light-emitting surface of the light-emitting diode in the process of coating the phosphor, thereby improving the phosphor coating.
• Uniformity For white light emitting diode devices, it is also possible to thereby control the uniformity of color temperature and color coordinates of white light. Therefore, the white light emitting diode device can be directly fabricated without using a phosphor packaging process in the packaging process, thereby simplifying the manufacturing process of the white light emitting diode device.

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• 2008
  • 2008-02-25 CN CNB2008100264790A patent/CN100483762C/zh not_active Expired - Fee Related
  • 2008-05-27 EP EP08757355A patent/EP2249403A4/en not_active Withdrawn
  • 2008-05-27 JP JP2010547023A patent/JP2011513946A/ja active Pending
  • 2008-05-27 WO PCT/CN2008/001024 patent/WO2009105923A1/zh not_active Ceased
• 2009
  • 2009-01-09 US US12/351,668 patent/US20090215210A1/en not_active Abandoned
  • 2009-11-03 US US12/611,852 patent/US7875471B2/en not_active Expired - Fee Related
  • 2009-11-09 US US12/615,262 patent/US7875472B2/en not_active Expired - Fee Related
• 2010
  • 2010-05-07 US US12/776,367 patent/US7875473B2/en not_active Expired - Fee Related

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