CN100483762C - 一种发光二极管器件的制造方法 - Google Patents

一种发光二极管器件的制造方法 Download PDF

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Publication number
CN100483762C
CN100483762C CNB2008100264790A CN200810026479A CN100483762C CN 100483762 C CN100483762 C CN 100483762C CN B2008100264790 A CNB2008100264790 A CN B2008100264790A CN 200810026479 A CN200810026479 A CN 200810026479A CN 100483762 C CN100483762 C CN 100483762C
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CN
China
Prior art keywords
layer
chip structure
light
led device
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2008100264790A
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English (en)
Chinese (zh)
Other versions
CN101237015A (zh
Inventor
樊邦弘
翁新川
叶国光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Yinyu Chip Semiconductor Co., Ltd.
Original Assignee
Heshan Lide Electronic Enterprise Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heshan Lide Electronic Enterprise Co Ltd filed Critical Heshan Lide Electronic Enterprise Co Ltd
Priority to CNB2008100264790A priority Critical patent/CN100483762C/zh
Priority to JP2010547023A priority patent/JP2011513946A/ja
Priority to PCT/CN2008/001024 priority patent/WO2009105923A1/zh
Priority to EP08757355A priority patent/EP2249403A4/en
Publication of CN101237015A publication Critical patent/CN101237015A/zh
Priority to HK08113563.2A priority patent/HK1122650B/xx
Priority to US12/351,668 priority patent/US20090215210A1/en
Application granted granted Critical
Publication of CN100483762C publication Critical patent/CN100483762C/zh
Priority to US12/611,852 priority patent/US7875471B2/en
Priority to US12/615,262 priority patent/US7875472B2/en
Priority to US12/776,367 priority patent/US7875473B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

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CNB2008100264790A 2008-02-25 2008-02-25 一种发光二极管器件的制造方法 Expired - Fee Related CN100483762C (zh)

Priority Applications (9)

Application Number Priority Date Filing Date Title
CNB2008100264790A CN100483762C (zh) 2008-02-25 2008-02-25 一种发光二极管器件的制造方法
JP2010547023A JP2011513946A (ja) 2008-02-25 2008-05-27 Ｌｅｄ装置の製造方法
PCT/CN2008/001024 WO2009105923A1 (zh) 2008-02-25 2008-05-27 一种发光二极管器件的制造方法
EP08757355A EP2249403A4 (en) 2008-02-25 2008-05-27 METHOD OF MANUFACTURING A LED DEVICE
HK08113563.2A HK1122650B (en) 2008-12-15 Method of manufacturing light emitting diode device
US12/351,668 US20090215210A1 (en) 2008-02-25 2009-01-09 Method of manufacturing light emitting diode device
US12/611,852 US7875471B2 (en) 2008-02-25 2009-11-03 Method of manufacturing light emitting diode device
US12/615,262 US7875472B2 (en) 2008-02-25 2009-11-09 Method of manufacturing light emitting diode device
US12/776,367 US7875473B2 (en) 2008-02-25 2010-05-07 Method of manufacturing light emitting diode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2008100264790A CN100483762C (zh) 2008-02-25 2008-02-25 一种发光二极管器件的制造方法

Publications (2)

Publication Number Publication Date
CN101237015A CN101237015A (zh) 2008-08-06
CN100483762C true CN100483762C (zh) 2009-04-29

Family

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Family Applications (1)

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CNB2008100264790A Expired - Fee Related CN100483762C (zh) 2008-02-25 2008-02-25 一种发光二极管器件的制造方法

Country Status (5)

Country Link
US (4) US20090215210A1 (enExample)
EP (1) EP2249403A4 (enExample)
JP (1) JP2011513946A (enExample)
CN (1) CN100483762C (enExample)
WO (1) WO2009105923A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201426B (zh) * 2010-03-23 2016-05-04 展晶科技(深圳)有限公司 发光二极管及其制作方法
US9178107B2 (en) 2010-08-03 2015-11-03 Industrial Technology Research Institute Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same
WO2012016377A1 (en) 2010-08-03 2012-02-09 Industrial Technology Research Institute Light emitting diode chip, light emitting diode package structure, and method for forming the same
EP2633554A1 (en) * 2010-10-27 2013-09-04 Koninklijke Philips Electronics N.V. Laminate support film for fabrication of light emitting devices and method its fabrication
US8349628B2 (en) 2011-03-22 2013-01-08 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode devices
CN102829416B (zh) * 2011-06-14 2015-07-22 财团法人工业技术研究院 具有多种光形输出的发光二极管的灯具光源
TWI606618B (zh) * 2012-01-03 2017-11-21 Ｌｇ伊諾特股份有限公司 發光裝置
JP6248431B2 (ja) * 2013-06-28 2017-12-20 日亜化学工業株式会社 半導体発光装置の製造方法
KR102282141B1 (ko) 2014-09-02 2021-07-28 삼성전자주식회사 반도체 발광소자
TWI657593B (zh) * 2015-04-15 2019-04-21 晶元光電股份有限公司 發光元件及其製造方法
CN107946441A (zh) * 2016-10-12 2018-04-20 亿光电子工业股份有限公司 发光装置及发光二极管封装结构
KR102611980B1 (ko) * 2016-12-14 2023-12-08 삼성전자주식회사 멀티 컬러를 구현할 수 있는 발광 소자
CN108172591B (zh) * 2018-01-05 2024-09-27 广东迅扬科技股份有限公司 一种Micro LED彩色显示阵列结构
CN112086548A (zh) * 2018-07-16 2020-12-15 厦门三安光电有限公司 微发光装置及其显示器

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6650044B1 (en) * 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
DE10296494D2 (de) * 2002-02-14 2005-07-07 Infineon Technologies Ag Optoelektronische Baugruppe mit Peltierkühlung
JP4374913B2 (ja) * 2003-06-05 2009-12-02 日亜化学工業株式会社 発光装置
EP1658642B1 (en) * 2003-08-28 2014-02-26 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
JP2005123238A (ja) * 2003-10-14 2005-05-12 Matsushita Electric Ind Co Ltd 半導体発光装置の製造方法および半導体発光装置
JP4857596B2 (ja) * 2004-06-24 2012-01-18 豊田合成株式会社 発光素子の製造方法
JP2006024745A (ja) * 2004-07-08 2006-01-26 Matsushita Electric Ind Co Ltd Ｌｅｄ光源
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
JP2006156837A (ja) * 2004-11-30 2006-06-15 Matsushita Electric Ind Co Ltd 半導体発光装置、発光モジュール、および照明装置
US7195944B2 (en) * 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
JP2006222288A (ja) * 2005-02-10 2006-08-24 Toshiba Corp 白色ｌｅｄ及びその製造方法
JP2007123438A (ja) * 2005-10-26 2007-05-17 Toyoda Gosei Co Ltd 蛍光体板及びこれを備えた発光装置
JP4828226B2 (ja) * 2005-12-28 2011-11-30 新光電気工業株式会社 発光装置及びその製造方法
JP4907253B2 (ja) * 2006-08-03 2012-03-28 シャープ株式会社 注入装置、製造装置、および半導体発光装置の製造方法
TWI418054B (zh) * 2006-08-08 2013-12-01 Ｌｇ電子股份有限公司 發光裝置封裝與製造此封裝之方法

Also Published As

Publication number Publication date
US20090215210A1 (en) 2009-08-27
EP2249403A1 (en) 2010-11-10
US20100216265A1 (en) 2010-08-26
HK1122650A1 (zh) 2009-05-22
US7875473B2 (en) 2011-01-25
EP2249403A4 (en) 2013-03-06
US20100055814A1 (en) 2010-03-04
US7875472B2 (en) 2011-01-25
US20100047940A1 (en) 2010-02-25
CN101237015A (zh) 2008-08-06
US7875471B2 (en) 2011-01-25
WO2009105923A1 (zh) 2009-09-03
JP2011513946A (ja) 2011-04-28

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