TWI735405B - 發光裝置及其形成方法 - Google Patents
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Abstract
提供中間可移除放置及處理結構以實現在發光元件上形成光學元件,包含在該等光學元件下方形成一反射層。此等可移除放置及處理結構實質上獨立於所產生之發光裝置之特定尺寸,從而容許其等在多種應用中之重用。該所得發光裝置包含該發光元件、具有反射體之該光學元件及視情況一波長轉換材料,但不包含該等放置及處理結構之殘餘部分,諸如一載體基板。
Description
本發明係關於發光裝置之領域,且特定言之係關於一種適合附接至一印刷電路(PC)或其他配件且包含一光學元件但不包含一基板載體之發光裝置(LED)。
不斷擴大地使用半導體發光裝置已產生對於此等裝置之一高度競爭性市場。在此市場中,效能及價格對於提供供應商之間的產品區別通常係重要的。
用於減小裝置之成本之一技術係藉由減小形成該裝置之組件之數目及/或使用成本更低之組件而減小材料成本。此外或替代地,可藉由憑藉減小製造程序之數目及/或使用成本更低之製造程序而減小製造成本來減小裝置之成本。
用於減小製造成本之一技術係在各製造步驟期間處理多個裝置。然而,多個裝置之處理通常需要使用主要經提供以適應處理程序之組件。
在發光裝置之製造中,數百個發光元件產生/生長在一生長基板上,在該等發光元件之間具有最小「浪費」空間。此等發光元件通常實質上小於發光裝置之最終大小,此係因為發光裝置通常需要用於提供一所要光輸出型樣且亦用於保護發光元件之一光學元件;發光裝置
亦可包含一波長轉換元件以產生一複合多波長光輸出,諸如白光。因此,必須在發光元件之間提供用以接納此等額外組件之空間。
為了使發光元件以一適當間隔定位以容許在一單一程序期間將光學及其他元件添加至多個發光元件,切割/分割生長基板以提供個別(「單一化」)發光元件,且將此等發光元件附接至經形成以產生一適當間隔發光元件陣列之一基板載體。基板載體通常亦經組態以促進後續安裝及封裝要求,包含提供至發光元件之外部電接觸。
在將發光元件安裝於基板載體上之後,通常藉由將發光元件之接觸墊焊接至提供基板載體上之外部電接觸之導體,將光學元件及選用波長轉換元件施加至基板載體上之多個發光元件。此後,切割/分割基板載體以提供個別(「單一化」)發光裝置。
圖3A至圖3B繪示一例示性先前技術單一化發光裝置300之一斷面視圖及一俯視圖。發光裝置300包含「覆晶」安裝於一基板載體310(習知稱為一「子基板」310)之一單一化部分上之一發光元件320或晶片。當發光元件320形成於生長基板(未展示)上時,首先生長形成發光元件320之半導體層,且在半導體層之頂部上生長形成至半導體層之接觸之導電層,其中接觸墊330在最上層處。一覆晶安裝提供發光元件320之下表面上之接觸墊330,且多數光係自發光元件320之上表面發射。在此實例中,已移除其上已生長發光元件320之生長基板以增加光輸出效率。
子基板310包含提供至發光元件320之下表面上之接觸墊330之外部接觸之導體340,且接觸墊330通常使用一焊料層335附接至此等導體340。子基板310亦可包含反射材料(未展示)以重導引光遠離子基板310。
在非單一化基板載體之處理期間,一波長轉換元件350已附接至發光元件320之各者且一光學元件360已施加於波長轉換材料350上
方。視情況,波長轉換材料(諸如磷光體粒子)可包含於用於形成光學元件360之材料內,從而消除對此等元件350、360之單獨應用之需要。
一旦單一化,成品發光裝置300包含子基板310、發光元件320、光學及波長轉換元件350、360以及至發光元件之外部連接件340。尤其應注意,子基板310界定成品發光裝置300之總體尺寸。若對於一特定應用而言一較大光學元件係所要的,則必須設計一不同子基板;若對於一特定應用而言一較小光學元件係足夠的,則必須設計一不同子基板或可招致有用區域之一損耗。此外,一些應用可需要呈一特定配置之多個發光裝置,且子基板310之尺寸可排除所要配置,再次需要一不同子基板之設計。
不使用一子基板之其他技術本身亦常用於產生一封裝發光裝置。引線框及引線框載體常用於促進在各程序期間製造多個發光裝置。
一引線框通常係提供用於外部連接至一發光元件之接觸件(引線)之一導電結構。發光元件上之兩個接觸墊焊接至延伸遠離發光元件之兩個引線之末端。該等引線可經塑形及彎曲以使該等引線之相對末端定位於適當位置及定向中以用於後續安裝於一印刷電路板或其他配件上。
引線框載體包括多個引線框,且容許後續處理引線框載體上之多個發光元件。舉例而言,可在單一化引線框上之個別發光元件之前在引線框載體上方模製光學元件。通常,經模製元件在引線之表面(發光元件焊接於該表面上)下方延伸,從而在發光元件下方有效地形成包括經模製材料及導體(引線)之一基板載體。
如在一子基板之上述實例中,關於具有發光元件之各引線框之經形成基板載體有效地界定成品產品之尺寸。若在一引線框載體上之
引線框之間需要更多或更少空間以容納更大或更小光學元件,則可能需要一新引線框載體。
在此等實例之各者中,基板載體之主要功能之一者係提供容許多個單一化發光元件之放置及處理之一結構,且特定言之係促進在各單一化發光元件上方形成一光學元件。基板載體之另一主要功能係針對自發光裝置之發射提供將光重導引至光學元件中之一反射表面。
提供一種產生包含一發光元件及一光學元件但不包含一基板載體之多個發光裝置之方法將係有利的。提供一種產生具有不同尺寸而無需不同組件以適應該等不同尺寸之發光裝置之方法亦係有利的。
為了更好地解決此等問題之一或多者,在本發明之一實施例中,提供中間可移除放置及處理結構以實現在發光元件上形成光學元件,包含在該等光學元件下方形成一反射層。此等可移除放置及處理結構實質上獨立於所產生之發光裝置之特定尺寸,從而容許其等在多種應用中之重用。所得發光裝置包含該發光元件、具有反射體之該光學元件及視情況一波長轉換材料,但不包含該等放置及處理結構之殘餘部分,諸如一載體基板。
10:發光結構
20:發光結構
30:發光裝置
101:切割/分割
110:生長基板/生長基板元件
115:生長基板之上表面
120:發光元件
130:接觸墊
140:中間可移除結構/膠帶
145:切割
150:波長轉換材料/預成形波長轉換板
210:載體基板
220:雙面黏著膠帶
221:膠帶之上表面
222:膠帶之下表面
230:反射材料
235:施配器
250:光學元件
255:模製材料/中介材料
280:切割
300:單一化發光裝置
310:基板載體/子基板
320:發光元件
330:接觸墊
335:焊料層
340:導體/外部連接件
350:波長轉換元件
360:光學元件
參考隨附圖式進一步詳細且藉由實例解釋本發明,其中:
圖1A至圖1F繪示用於形成具有一波長轉換元件之一發光元件之一例示性程序。
圖2A至2F繪示用於形成具有一發光元件及一光學元件而不具有一基板載體之一發光裝置之一例示性程序。
圖3A至圖3B繪示具有一發光元件、一光學元件及一載體基板元件之一例示性先前技術發光裝置。
貫穿該等圖式,相同參考數字指示類似或對應特徵或功能。該
等圖式經包含用於闡釋性目的且非旨在限制本發明之範疇。
在以下描述中,為了解釋而非限制之目的,闡述諸如特定架構、介面、技術等之具體細節以提供對本發明之概念之一徹底理解。然而,熟習此項技術者將明白本發明可在脫離此等具體細節之其他實施例中實踐。同樣地,此描述之正文係關於如圖中所繪示之例示性實施例,且並不旨在於明確包含於申請專利範圍中之限制之外限制本發明。為了簡潔及清楚起見,省略熟知裝置、電路及方法之詳細描述以免使本發明之描述與不必要的細節混淆。
圖1A至圖1F繪示用於形成具有一波長轉換元件之一發光元件之一例示性程序。
圖1A繪示在一生長基板110上形成/生長多個發光元件120。各發光元件120通常可包含夾置於一N型半導體區域與一P型半導體區域之間之一作用發光區域。在發光元件120之形成期間產生導電結構(未展示)以便在發光元件120之最頂層上提供接觸墊130。在一些實施例中,接觸墊130可在發光元件120之相對表面上。個別發光結構10藉由切割/分割101具有發光元件120之生長基板110而形成以形成個別(單一化)發光結構10。
圖1B繪示將發光結構10放置在一中間可移除結構140(諸如具有一黏著表面之一可移除「鋸切膠帶」)上。如所繪示,結構10以一「覆晶」定向放置於膠帶140上,其中接觸墊130處在膠帶140上且生長基板110處在發光元件120上方。在此例示性實施例中,生長基板110未經移除,且為發光元件120提供結構支撐及保護,藉此容許結構10隨後經處理而不附接至一載體基板,如在圖3A至圖3B之實例中。
亦可使用對發光元件120提供結構支撐之其他方法。舉例而言,Jipu Lei、Stefano Schiaffino、Alexander Nickel、Mooi Guan Ng、
Grigoriy Basin及Sal Akram於2012年6月7日申請之「CHIP SCALE LIGHT EMITTING DEVICE WITH METAL PILLARS IN A MOLDING COMPOUND FORMED AT WAFER LEVEL」之同在申請中之美國專利申請案61/656,691(代理人檔案2012PF00450)揭示形成接觸墊130與發光元件120之間之連接之導電層可形成為厚金屬柱,其中介電材料介於該等柱之間,經圍封之柱容許結構自支撐。
為了增強透過生長基板110之光輸出效率,生長基板110與發光元件120之發光表面之間之介面可經紋理化以減小在介面處全內反射(TIR)之光之量。在一例示性實施例中,生長基板110可係容許發光元件120生長在生長基板之一圖案化/紋理化表面上之一「圖案化藍寶石基板」(PSS)。
在此例示性實施例中,發光結構10經充分間隔開以容許一波長轉換材料150施加至發光結構10之頂部及側,如圖1C至圖1D中所繪示。為了增強光提取效率,生長基板110之上表面115可經紋理化/粗糙化以減小波長轉換材料150與生長基板110之間之介面處之全內反射。此外(未繪示),一反射材料層可施加於發光結構10之間以在一向上方向上反射任何向下行進光,如關於圖2A至圖2F進一步詳述。
在圖1C之實例中,波長轉換材料150之一預成形層壓板放置於發光結構10之頂部上,接著經處理以符合膠帶140上之間隔開結構10之形狀,如圖1D中所繪示。在一例示性實施例中,使用真空及熱之一組合以將波長轉換材料150層壓至發光結構10,諸如2008年3月18日授證給Haryanto Chandra且以引用之方式併入本文中之USP 7,344,952中所揭示。
若發光結構10藉由其等之光輸出特性進行預測試及分類(「分級化」),則可將具有類似特性之結構10放置於膠帶140上,且可選擇預成形波長轉換板150使得其特性結合膠帶上之發光結構10之光輸出特
性提供一所要複合光輸出。
熟習此項技術者將認知波長轉換材料150不必呈一層壓板之形式;其可經由噴塗、模製、網版印刷等以液體或糊狀物形式予以施加。
具有波長轉換材料150之發光結構10(在下文中稱為「結構20」)隨後藉由切割145結構20之間之材料150而單一化,如圖1E中所繪示。結構20之各者隨後可自膠帶140移除,如圖1F中所繪示。
圖2A至圖2F繪示用於形成具有一發光元件及具有一反射元件之一光學元件而不具有一載體基板之一發光裝置之一例示性程序。通常,可使用形成適當形狀以達成所要光學效應之一模具在一發光裝置上形成光學元件。矽或呈液體或糊狀物形式之其他透明材料可用作模具材料,且如上文所提及,此材料可注入有波長轉換材料。
為了耐受由一模製程序施加之應力,將包括一發光元件120、一生長基板110及選用波長轉換材料150之發光結構20放置於足夠穩健以在此程序期間支撐發光結構20之一載體基板210上。此等結構20定位於載體210上,在該等結構之間具有足夠空間以容許形成圍繞各結構20之一光學元件。
為了促進隨後形成之裝置自載體210容易地移除,可使用一雙面黏著膠帶220以將結構20附接至膠帶220之上表面221,且將膠帶220之下表面222附接至載體210,如圖2A中所繪示。膠帶220可包含附接至載體210之表面222上之一熱釋放塗層,使得在模製程序完成之後可藉由在容許膠帶220與載體210分離之一溫度下固化膠帶220達一短時間而自載體210移除膠帶220,從而容許重用載體210。
在圖2B,一施配器235將反射材料230施加至膠帶220上之結構之間之空間。此反射材料230將用於將引導至隨後形成之發光裝置之底部之任何光重導引回朝向光學元件之所要發光表面(圖2B中未繪示)。
此反射材料230可係具有一高度反射填充物(諸如TiO2)之一聚合物,其以液體或糊狀物形式施加,且隨後經固化以形成此反射材料230之一平滑層,如圖2C中所繪示。
視情況,取決於光學元件之形狀及其他特性,可省略反射材料230,依靠光學元件之下表面處之全內反射(TIR)以將引導至此表面之光重導引回朝向光學元件之預期發光表面。在一些應用中,發光裝置待安裝於之表面可係反射性,且可省略反射材料230。
在圖2D,於各發光結構20上方形成一光學元件250。在圖2D之實例中,光學元件250呈各發光結構20上方之一半球之形式,但是可形成任何若干不同形狀以達成一特定光發射型樣,諸如一準直光發射型樣。為了簡化製造,可將模具材料施加至載體210之整個表面區域,使得模製程序產生藉由發光結構20之間之剩餘空間中之模製材料255連接在一起之個別光學元件250。尤其應注意,反射材料230位於光學元件250及中介材料255下方,使得向上反射可經向下引導穿過光學元件250之光。
在圖2E,藉由切割280穿過光學元件250、反射材料230且至膠帶220中載體210上方而單一化包括發光結構20、反射材料230及光學元件250之個別發光裝置30。此部分切割容許重用未損壞之載體210以形成發光裝置之其他集合。
在部分切割以單一化發光裝置30之後,自裝置30及載體基板210移除膠帶220,從而形成不具有載體基板210之元件之個別發光裝置30,如圖2F中所繪示。
熟習此項技術者將認知,可在單一化發光裝置30之前移除載體基板210,從而使裝置30留在膠帶220上用於隨後單一化。
所形成之發光裝置30包含一發光元件120、一生長基板元件110、一選用波長轉換材料150及在光學元件250及中介材料255下方之反射
材料230。如上文所提及,反射材料亦可放置於波長轉換材料150之下。
尤其應注意,發光裝置30之總體大小包含由光學元件250及材料255佔用之區域,且材料255之量可增加或減少以提供成品發光裝置30之一所要大小或形狀。舉例而言,在使用多種不同發光裝置之一應用中,個別裝置可經定大小及塑形以依似拼圖(jig-saw)方式配裝在一起。
成品發光裝置30之大小及形狀藉由用於產生載體210上之光學元件250之模具界定及/或藉由發光結構20之間之中介材料255之切割/修整界定,且並非藉由載體基板210界定。換言之,無關於滿足裝置之一特定應用之準則所需之裝置之大小或形狀,可使用相同載體基板210。
此外,因為載體基板210係可重用的且在產生發光裝置30之程序中未「消耗」,所以基板210之成本並非各發光裝置30之製造中之一直接成本。此基板210之成本在將不斷使用此基板210之全部裝置中共用且因此,此基板210之每裝置成本實質上係無限小。
雖然在圖式及前述描述中已繪示且詳細描述本發明,但此圖解及描述應被視為闡釋性或例示性且非限制性;本發明不限於所揭示之實施例。
舉例而言,可在其中多個發光元件包含於各發光結構中或多個發光結構藉由一單一光學元件囊封之一實施例中操作本發明。因為對於發光元件或各光學元件內之發光結構之各不同組合無需一不同載體基板,所以本發明之技術針對多種應用提供發光裝置之設計及組態之實質靈活性。
自該等圖式、揭示內容及隨附申請專利範圍之一研究,熟習此項技術者在實踐本發明時可瞭解及實現所揭示實施例之其他變動。在
申請專利範圍中,字詞「包括」並不排除其他元件或步驟,且不定冠詞「一」或「一個」並不排除複數個。某些措施在相互不同的附屬請求項中敘述,但僅就此事實,並不表示此等措施之組合不能利用以獲得好處。不應將申請專利範圍中之任意參考符號理解為限制範疇。
110:生長基板/生長基板元件
120:發光元件
130:接觸墊
150:波長轉換材料/預成形波長轉換板
230:反射材料
250:光學元件
255:模製材料/中介材料
300:單一化發光裝置
Claims (7)
- 一種發光裝置結構,其包括:兩發光結構,其相鄰於彼此地設置於一載體基板上,每一發光結構包括一第一表面及相對於該第一表面定位之一第二表面,導電墊,其耦接至該等發光結構之該第二表面,光學層,其設置於該等發光結構之每一者之上方,每一光學層包括一第一表面、相對於該光學層之該第一表面定位且相鄰於該發光結構之該第一表面之一第二表面、該光學層之該第一及第二表面間之位於該發光結構上方之一中央部分及該第一及第二表面間自該中央部分橫向地延伸之一週邊部分,反射層,其設置於該等光學層之每一者上,每一反射層在該光學層之該週邊部分處與該光學層之該第二表面接觸,每一反射層包括與該發光結構之該第二表面平行並對齊之一表面,該兩相鄰發光結構間之一切割(slicing),其分離該等光學層、該等反射層及該等發光結構,及該載體基板在該切割下方連續地延伸,其中該發光結構包含定位於一發光元件與該光學層之間之一生長基板。
- 如請求項1之結構,其中該生長基板係一圖案化藍寶石基板(PSS)。
- 如請求項1之結構,其中該發光結構包含足夠厚以便對該發光結構提供自支撐之導電層。
- 如請求項1之結構,其進一步包括定位於該發光結構與該光學層之間之一波長轉換元件。
- 一種形成發光裝置之方法,其包括:提供一載體基板;藉由施加一雙面膠帶以使該等發光結構可移除地附加至該載體基板以將發光結構定位於該載體基板上;在該載體基板及該等發光結構上方施加一光學材料;在該等發光結構之間之空間中切割該光學材料但不切割該載體基板;及自該等發光結構卸離該載體基板。
- 如請求項5之方法,其中該雙面膠帶包含可促進該載體基板之卸離之一熱釋放塗層。
- 如請求項5之方法,其中該發光結構包含足夠厚以便對該發光結構提供自支撐之導電層。
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EP3022779B1 (en) | 2020-03-18 |
CN105393374A (zh) | 2016-03-09 |
US20160172554A1 (en) | 2016-06-16 |
KR20160032236A (ko) | 2016-03-23 |
JP2016525799A (ja) | 2016-08-25 |
CN105393374B (zh) | 2019-05-28 |
JP6608359B2 (ja) | 2019-11-20 |
TW201505214A (zh) | 2015-02-01 |
EP3022779A1 (en) | 2016-05-25 |
WO2015008243A1 (en) | 2015-01-22 |
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