JP2006073950A - 高耐熱半導体装置 - Google Patents

高耐熱半導体装置 Download PDF

Info

Publication number
JP2006073950A
JP2006073950A JP2004258673A JP2004258673A JP2006073950A JP 2006073950 A JP2006073950 A JP 2006073950A JP 2004258673 A JP2004258673 A JP 2004258673A JP 2004258673 A JP2004258673 A JP 2004258673A JP 2006073950 A JP2006073950 A JP 2006073950A
Authority
JP
Japan
Prior art keywords
si
component
group
silicon
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004258673A
Other languages
English (en)
Inventor
Yoshikazu Shoji
Yoshitaka Sugawara
義和 東海林
良孝 菅原
Original Assignee
Asahi Denka Kogyo Kk
Kansai Electric Power Co Inc:The
旭電化工業株式会社
関西電力株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Denka Kogyo Kk, Kansai Electric Power Co Inc:The, 旭電化工業株式会社, 関西電力株式会社 filed Critical Asahi Denka Kogyo Kk
Priority to JP2004258673A priority Critical patent/JP2006073950A/ja
Publication of JP2006073950A publication Critical patent/JP2006073950A/ja
Pending legal-status Critical Current

Links