JP6608359B2 - 基板キャリアを有さず光学素子を有するpcled - Google Patents
基板キャリアを有さず光学素子を有するpcled Download PDFInfo
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- JP6608359B2 JP6608359B2 JP2016526744A JP2016526744A JP6608359B2 JP 6608359 B2 JP6608359 B2 JP 6608359B2 JP 2016526744 A JP2016526744 A JP 2016526744A JP 2016526744 A JP2016526744 A JP 2016526744A JP 6608359 B2 JP6608359 B2 JP 6608359B2
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- 239000000758 substrate Substances 0.000 title claims description 61
- 230000003287 optical effect Effects 0.000 title claims description 56
- 239000000463 material Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000012778 molding material Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 241001161843 Chandra Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Description
Claims (8)
- 発光デバイスを製造する方法であって、
キャリア基板を用意し、
前記キャリア基板上に、複数の自己支持型の発光構造を位置付け、該複数の発光構造の各発光構造が発光素子を有し、該発光素子は、該発光素子の第1の表面上に導電パッドを有し、
前記複数の発光構造の間に平滑な反射層を形成し、該反射層は、前記複数の発光構造の第1の表面と実質的に平坦であり、
前記キャリア基板の上に光学材料を塗布し、
前記光学材料に金型を適用して、前記複数の発光構造の上の光学素子と、前記複数の発光構造の間の介在層とを形成し、該介在層は、前記反射層の真上に配置され、
前記複数の発光構造の間で前記介在層及び前記反射層をスライスすることによって、前記複数の発光構造を個片化し、
前記複数の発光構造の各発光構造から前記キャリア基板を取り外す、
ことを有し、
前記複数の発光構造の各発光構造の大きさ及び形状が、前記光学素子、前記介在層、及び前記反射層によって画成される、
方法。 - 前記キャリア基板上に前記自己支持型の発光構造を位置付けることは、両面テープを貼り付けて前記自己支持型の発光構造を前記キャリア基板上に取り付けることを含む、請求項1に記載の方法。
- 前記両面テープは熱剥離コーティングを含んでおり、前記発光構造を前記キャリア基板から取り外すことは、前記キャリア基板から前記両面テープを熱剥離することを有する、請求項2に記載の方法。
- 発光素子と前記光学素子との間に波長変換層が置かれる、請求項1に記載の方法。
- 前記波長変換層は、プリフォームされたシート状の波長変換材料として設けられる、請求項4に記載の方法。
- 前記波長変換層は、前記発光素子を覆う液体又はペースト形態で設けられる、請求項4に記載の方法。
- 発光デバイスであって、
発光構造であり、
発光素子と、
前記発光素子の第1の表面上のコンタクトパッドと、
を有する発光構造と、
光学素子と、
前記光学素子の周囲の、側壁を持つ介在材料と、
前記発光素子を取り囲む平滑な反射層であり、前記光学素子及び前記介在材料の下に置かれ且つ側壁を持つ反射層と、
を有し、
前記反射層の前記側壁は、前記介在材料の前記側壁と実質的に平坦であり、当該発光デバイスの外表面が、前記光学素子、前記介在材料、前記反射層、及び前記発光素子の前記第1の表面によって画成されている、
発光デバイス。 - 前記光学素子は前記反射層と接触している、請求項7に記載の発光デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361856103P | 2013-07-19 | 2013-07-19 | |
US61/856,103 | 2013-07-19 | ||
PCT/IB2014/063169 WO2015008243A1 (en) | 2013-07-19 | 2014-07-17 | Pc led with optical element and without substrate carrier |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016525799A JP2016525799A (ja) | 2016-08-25 |
JP2016525799A5 JP2016525799A5 (ja) | 2017-08-24 |
JP6608359B2 true JP6608359B2 (ja) | 2019-11-20 |
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ID=51541111
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Application Number | Title | Priority Date | Filing Date |
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JP2016526744A Active JP6608359B2 (ja) | 2013-07-19 | 2014-07-17 | 基板キャリアを有さず光学素子を有するpcled |
Country Status (7)
Country | Link |
---|---|
US (1) | US20160172554A1 (ja) |
EP (1) | EP3022779B1 (ja) |
JP (1) | JP6608359B2 (ja) |
KR (1) | KR20160032236A (ja) |
CN (1) | CN105393374B (ja) |
TW (1) | TWI735405B (ja) |
WO (1) | WO2015008243A1 (ja) |
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-
2014
- 2014-07-17 US US14/906,256 patent/US20160172554A1/en not_active Abandoned
- 2014-07-17 EP EP14766210.0A patent/EP3022779B1/en active Active
- 2014-07-17 WO PCT/IB2014/063169 patent/WO2015008243A1/en active Application Filing
- 2014-07-17 KR KR1020167004242A patent/KR20160032236A/ko not_active Application Discontinuation
- 2014-07-17 CN CN201480041023.5A patent/CN105393374B/zh active Active
- 2014-07-17 JP JP2016526744A patent/JP6608359B2/ja active Active
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CN105393374A (zh) | 2016-03-09 |
KR20160032236A (ko) | 2016-03-23 |
CN105393374B (zh) | 2019-05-28 |
EP3022779B1 (en) | 2020-03-18 |
JP2016525799A (ja) | 2016-08-25 |
TW201505214A (zh) | 2015-02-01 |
EP3022779A1 (en) | 2016-05-25 |
WO2015008243A1 (en) | 2015-01-22 |
TWI735405B (zh) | 2021-08-11 |
US20160172554A1 (en) | 2016-06-16 |
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