CN1227670A - 制造一种红外发射发光二极管的方法 - Google Patents
制造一种红外发射发光二极管的方法 Download PDFInfo
- Publication number
- CN1227670A CN1227670A CN97197120A CN97197120A CN1227670A CN 1227670 A CN1227670 A CN 1227670A CN 97197120 A CN97197120 A CN 97197120A CN 97197120 A CN97197120 A CN 97197120A CN 1227670 A CN1227670 A CN 1227670A
- Authority
- CN
- China
- Prior art keywords
- layer
- algaas
- infrared
- cover layer
- lpe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19631906 | 1996-08-07 | ||
DE19631906.4 | 1996-08-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1227670A true CN1227670A (zh) | 1999-09-01 |
Family
ID=7802051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN97197120A Pending CN1227670A (zh) | 1996-08-07 | 1997-08-04 | 制造一种红外发射发光二极管的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6440765B1 (zh) |
EP (1) | EP0917741B1 (zh) |
JP (1) | JP2000516768A (zh) |
CN (1) | CN1227670A (zh) |
DE (1) | DE59705207D1 (zh) |
WO (1) | WO1998006133A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870227A (zh) * | 2016-06-12 | 2016-08-17 | 天津三安光电有限公司 | 红外发光二极管 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2982010B2 (ja) * | 1989-06-23 | 1999-11-22 | 三菱電機株式会社 | 数値制御方法及び装置 |
DE10056476B4 (de) * | 2000-11-15 | 2012-05-03 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper und Verfahren zu dessen Herstellung |
DE10224219B4 (de) * | 2002-05-31 | 2010-05-27 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Halbleiterbauelement mit zumindest teilweise voneinander getrennten Lichterzeugungs- und Lichtauskopplungsbereichen |
US20040098793A1 (en) * | 2002-11-19 | 2004-05-27 | Gershenson Joel H. | Protective trauma device straps for helmets |
JP6608359B2 (ja) * | 2013-07-19 | 2019-11-20 | ルミレッズ ホールディング ベーフェー | 基板キャリアを有さず光学素子を有するpcled |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6055678A (ja) * | 1983-09-06 | 1985-03-30 | Nec Corp | 発光ダイオ−ド |
JPH0770755B2 (ja) * | 1988-01-21 | 1995-07-31 | 三菱化学株式会社 | 高輝度led用エピタキシャル基板及びその製造方法 |
US5115286A (en) | 1988-08-26 | 1992-05-19 | Hewlett-Packard Company | Electro-optical device with inverted transparent substrate and method for making same |
US5103271A (en) * | 1989-09-28 | 1992-04-07 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method of fabricating the same |
US5070510A (en) * | 1989-12-12 | 1991-12-03 | Sharp Kabushiki Kaisha | Semiconductor laser device |
US5233204A (en) | 1992-01-10 | 1993-08-03 | Hewlett-Packard Company | Light-emitting diode with a thick transparent layer |
US5869849A (en) * | 1995-10-05 | 1999-02-09 | Industry Technology Research Institute | Light-emitting diodes with high illumination |
-
1997
- 1997-08-04 WO PCT/DE1997/001641 patent/WO1998006133A2/de active IP Right Grant
- 1997-08-04 JP JP10507482A patent/JP2000516768A/ja active Pending
- 1997-08-04 CN CN97197120A patent/CN1227670A/zh active Pending
- 1997-08-04 EP EP97936591A patent/EP0917741B1/de not_active Expired - Lifetime
- 1997-08-04 DE DE59705207T patent/DE59705207D1/de not_active Expired - Fee Related
-
1999
- 1999-02-08 US US09/246,747 patent/US6440765B1/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870227A (zh) * | 2016-06-12 | 2016-08-17 | 天津三安光电有限公司 | 红外发光二极管 |
CN105870227B (zh) * | 2016-06-12 | 2017-07-14 | 天津三安光电有限公司 | 红外发光二极管 |
Also Published As
Publication number | Publication date |
---|---|
US6440765B1 (en) | 2002-08-27 |
EP0917741A2 (de) | 1999-05-26 |
WO1998006133A2 (de) | 1998-02-12 |
DE59705207D1 (de) | 2001-12-06 |
JP2000516768A (ja) | 2000-12-12 |
WO1998006133A3 (de) | 1998-04-30 |
EP0917741B1 (de) | 2001-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101308899B (zh) | 半导体发光元件 | |
US6469324B1 (en) | Semiconductor light-emitting device and method for manufacturing the same | |
CN101540359B (zh) | 蓝宝石衬底的AlGaInP发光二极管外延片及其制备方法 | |
CN100495750C (zh) | 一种氮化镓基发光二极管外延片结构及其制备方法 | |
KR101631599B1 (ko) | 발광 소자 및 그 제조 방법 | |
CN102201512B (zh) | 一种图形化衬底 | |
CN101714595A (zh) | 发光元件 | |
KR20070046108A (ko) | 발광 소자 및 그 제조 방법 | |
JP2008103534A (ja) | 半導体発光素子 | |
CN102184846A (zh) | 一种图形化衬底的制备方法 | |
CN100448036C (zh) | 发光二极管 | |
JP3264563B2 (ja) | 半導体発光素子及びその製造方法 | |
CN102447028A (zh) | 发光元件 | |
CN101308887B (zh) | 高亮度发光二极管及其制作方法 | |
JP2003168822A (ja) | 発光素子及びその製造方法 | |
JPH05167101A (ja) | 半導体発光素子 | |
CN111819703A (zh) | 一种发光元件 | |
CN1227670A (zh) | 制造一种红外发射发光二极管的方法 | |
CN101593805B (zh) | 氮化物半导体发光器件 | |
CN109768126B (zh) | 一种发光二极管外延片的制造方法 | |
CN113594315B (zh) | Led芯片外延结构及其制备方法 | |
CN2665935Y (zh) | 高亮度发光二极管 | |
TWI389338B (zh) | A light-emitting element manufacturing method, a compound semiconductor wafer, and a light-emitting element | |
JP4313478B2 (ja) | AlGaInP発光ダイオード | |
CN105047769A (zh) | 一种利用湿法蚀刻进行衬底剥离的发光二极管制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent for invention or patent application | ||
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: SIEMENS AG TO: AO SI LAN MU PU TUO SEMICONDUCTOR CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Regensburg, Germany Applicant after: Oswald, Aupu, semiconductor, Limited by Share Ltd Address before: Munich, Germany Applicant before: Siemens AG |
|
C53 | Correction of patent for invention or patent application | ||
CB02 | Change of applicant information |
Applicant after: Siemens AG Applicant before: Oswald, Aupu, semiconductor, Limited by Share Ltd |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: OSLAM AOMPOTO SEMICONDUCTOR SHARES TO: OSRAM OPTO SEMICONDUCTOR COMPANY LIMITED |
|
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1022213 Country of ref document: HK |