CN105870227A - 红外发光二极管 - Google Patents

红外发光二极管 Download PDF

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CN105870227A
CN105870227A CN201610403930.0A CN201610403930A CN105870227A CN 105870227 A CN105870227 A CN 105870227A CN 201610403930 A CN201610403930 A CN 201610403930A CN 105870227 A CN105870227 A CN 105870227A
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emitting diode
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CN105870227B (zh
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黄俊凯
吴俊毅
王笃祥
吴超瑜
王进
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Tianjin Sanan Optoelectronics Co Ltd
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Priority to PCT/CN2017/087712 priority patent/WO2017215522A1/zh
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Abstract

本发明公开了一种红外光发光二极管，自上而下包括P型欧姆电极、接触层、P型覆盖层、活性层、N型覆盖层、缓冲层、GaAs衬底、N型欧姆电极，其特征为采用InxGa1‑xAs作为N型覆盖层及P型覆盖层，或是两者其一，优点在于采用InxGa1‑xAs作为覆盖层时，其材料低电阻值可有效提升电流扩散，并降低电压以及提高发光效率。

Description

红外发光二极管
技术领域
本发明属于光电子技术领域，具体涉及一种改善电流扩散、提高发光效率的红外发光二级管。
背景技术
红外发光二极管由于其特定的波段，以及低功耗和高可靠性，被广泛应用于安全监控、穿戴式装置、空间通信、遥控、医疗器具、传感器用光源及夜间照明等领域。
一般使用InGaAs作为活性层之多量子阱结构，发光峰波长在900nm以上的红外光发光二极管，覆盖层多使用非直接能隙的AlGaAs，其中Al属于活性大、容易氧化的原子，同时材料电阻率较高，使得电流扩散以及组件抗静电耐性较差。
发明内容
针对前述问题，本发明提出一种具有低带隙覆盖层的红外发光二极管，其以砷化镓GaAs或者砷化铟镓InxGa1-xAs作为覆盖层，相较于AlGaAs材料，砷化镓或砷化铟镓具备较低的电阻率，而且不含有容易氧化的Al成份，应用在覆盖层时，可以提高电流的横向传导，具有较佳的电流扩散效果。
本发明解决上述问题的技术方案为：一种红外发光二极管，包括：第一型覆盖层、活性层、第二覆盖层，所述第一覆盖层为InxGa1-xAs，其中In组分为0%≦X≦5%，各层间的晶格匹配差异△a0<3800ppm。
进一步地，所述第一覆盖层的厚度为1~20微米。
进一步地，所述第二覆盖层为InyGa1-yAs，其中In组分为0%≦y≦5%，各层间的晶格匹配差异△a0<3800ppm。
在本发明的一个较佳实施例中，一种红外发光二极管，其自上而下包括P型欧姆电极、接触层、P型覆盖层、活性层、N型覆盖层、缓冲层、GaAs衬底、N型欧姆电极，其特征为采用InxGa1-xAs作为N型覆盖层及P型覆盖层，或是两者其一，优点在于采用InxGa1-xAs作为覆盖层时，其材料低电阻值可有效提升电流扩散，并降低电压以及提高发光效率。
在本发明的另一个较佳实施例中，一种红外发光二极管，其自上而下包括N型欧姆电极、N型接触层、N型覆盖层、量子阱活性层、P型覆盖层、P型接触层、金属键合层、Si衬底、N型欧姆电极，其特征为采用InxGa1-xAs作为N型覆盖层及P型覆盖层，或是两者其一。
进一步地，N型覆盖层以及P型覆盖层的厚度介于1~20微米之间，在此厚度范围的组件，其抗静电耐性较佳。
进一步地，当采用砷化铟镓作为P型覆盖层和/或N型覆盖层时，活性层的发光峰波长在930nm以上，高于砷化铟镓材料光吸收最大波长910nm。
进一步地，活性层采用多量阱结构，其中阱层使用(InXGa1-X)As或(AlX1Ga1-X1)Y1In1-Y1As材料，与衬底相比为压应变，其厚度为d1，再透过势垒层(AlX1Ga1-X1)AsX2P1-X2或(AlX1Ga1-X1)Y2In1-Y2P施以与阱层相反的应变，其厚度为d2，藉由互相堆栈不同应变的两种材料形成量子阱结构，在分别控制d1及d2的情况下，可以使得总应变量互相调和，最终量子阱晶格与衬底GaAs互相匹配，有效改善晶格错位，减少差排缺陷产生，进而提高结构的发光效率。
本发明至少具有以下有益效果：
一、砷化镓及砷化铟镓材料具有较低的能隙值和较低的电阻率，可以降低组件的串联电阻，其电压值较低，并加强电流横向扩散，提高发光效率。
二、砷化镓及砷化铟镓材料可以阻隔可见光发出组件，在组件点亮发光时，不会看件微弱的红色光，改善红外发光二极管的红爆现象。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。此外，附图数据是描述概要，不是按比例绘制。
图1为根据本发明实施的一种红外发光二极管结构示意图。
图2为根据本发明实施的另一种一种红外发光二极管结构示意图。
图中标号如下：
101:GaAs衬底
102:缓冲层
103:N型覆盖层
104:量子阱活性层
105:P型覆盖层
106:接触层
107:N型欧姆电极
108:P型欧姆电极
201:Si衬底
202:金属键合层
203:P型接触层
204:P型覆盖层
205:量子阱活性层
206:N型覆盖层
207:N型接触层
208:P型欧姆电极
209:N型欧姆电极。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
在发明中，第一覆盖层和第二覆盖层系互为反型的半导体层，诸如第一覆盖层为N型半导体层时，则第二覆盖层为P型半导体层，如果第一覆盖层为P型半导体层时，则第二覆盖层为N型半导体层。
实施例一
如图1所示，一种具有低带隙覆盖层的红外发光二极管芯片，从上到下依次包括P型欧姆电极108、接触层106、P型覆盖层105、量子阱活性层104、N型覆盖层103、缓冲层102、GaAs衬底101、N型欧姆电极107。在本实施例中，采用有机金属气相外延法(OMVPE)成长，以InGaAs作为阱层及AlGaAsP作为势垒层构成之多量子阱活性层，其发光峰波长在900nm以上，量子阱对数介于3对到25对之间。
具体的，该GaAs衬底101采用掺杂Si的单晶N型GaAs衬底，浓度为介于8E17 ~ 3E18原子/厘米，优选浓度为1.2E18原子/厘米；该缓冲层102由GaAs构成，浓度介于8E17~5E18原子/厘米，优选浓度为1.5E18原子/厘米；该N型覆盖层为砷化铟镓InxGa1-xAs，其中铟组分X介于0%~5%，优选X为2%，浓度为5E17~ 2E18原子/厘米，优选浓度为7E17原子/厘米，厚度介于1-20微米之间；该活性层104为不具有掺杂的多量子阱结构活性层，其中阱层为AlInGaAs材料，其厚度为3~80nm，势垒层为AlGaAsP，其厚度为5~90nm，优选厚度为24nm，量子阱对数介于3对到25对之间，优选对数为12对；该P型覆盖层105为掺杂C的砷化铟镓InxGa1-xAs，其中铟组分X介于0%~5%，优选X为2%，浓度为8E17 ~ 6E18原子/厘米，优选浓度为1E18原子/厘米；该P型接触层106为重掺杂C的GaAs，浓度为大于5E18原子/厘米，优选浓度为8E18原子/厘米。
在本实施例中，活性层104采用多量子阱结构，量子阱对数为12对，阱层可使用(In0.15Ga0.75)As s，厚度为8nm，其材料对衬底GaAs施以压应变，势垒层使用(Al0.1Ga0.9)As0.85P0.15，厚度为24nm，其材料对衬底GaAs施以张应变。在此厚度时总应变调和与衬底符合，晶格得以互相匹配。在此厚度时总应变调和与衬底符合，晶格得以互相匹配，各层间的晶格匹配差异△a0<1500ppm，不会产生失配缺陷。
上述红外发光二极管在通入正向电流20mA情况下，正向电压为1.27V，发光峰波长为956nm，发光输出功率为4.9mW。采用砷化铟镓InxGa1-xAs作为覆盖层，其光吸收最大波长为910nm，可以阻隔可见光发光，观察组件点亮时不会看到微弱的红色光。
实施例二
如图2所示，一种具有低带隙覆盖层的红外发光二极管芯片，从上到下依次包括N型欧姆电极209、N型接触层207、N型覆盖层206、活性层205、P型覆盖层204、P型接触层203、金属键合层202、Si衬底201和P型欧姆电极208。在本实施例，采用Si衬底，并使用金属键合层反射活性层向下的光线，有效提高光取出，进而提升发光效率。
具体的，N型覆盖层206和P型覆盖层204采用砷化铟镓InxGa1-xAs，其中铟组分X介于0%~5%，优选X为2%，浓度为5E17 ~ 2E18原子/厘米，优选浓度为7E17原子/厘米。活性层205为多量子阱层，包括阱层和势垒层，量子阱对数为12对，其中阱层使用(In0.15Ga0.85)As，厚度为8nm，其材料对生长衬底GaAs施以压应变；势垒层使用(Al0.05Ga0.95)0.65In0.35P，厚度为20nm，其材料对生长衬底GaAs施以张应变，在此厚度时总应变调和与衬底符合，晶格得以互相匹配，同时控制了覆盖层的铝组分X介于0%~5%，从而保证各层间的晶格匹配差异△a0<1500ppm，不会产生失配缺陷。
上述红外发光二极管在通入正向电流50mA情况下，正向电压为1.42V，发光峰波长为950nm，发光输出功率为16.5mW。采用砷化铟镓作为覆盖层，其光吸收最大波长910nm，可以阻隔可见光发光，观察组件点亮时不会看到微弱的红色光。
很明显地，本发明的说明不应理解为仅仅限制在上述实施例，而是包括利用本发明构思的所有可能的实施方式。

Claims (10)

1.一种红外发光二极管，包括：第一覆盖层、活性层、第二覆盖层，其特征在于：所述第一覆盖层为InxGa1-xAs，其中In组分为0%≦X≦5%，各层间的晶格匹配差异△a0<3800ppm。
2.根据权利要求1所述的红外发光二极管，其特征在于：所述第一覆盖层和第二覆盖层的厚度为1~20微米。
3.根据权利要求1所述的红外发光二极管，其特征在于：所述所述第一覆盖层为InxGa1- xAs的In组分为2。
4.根据权利要求1所述的红外发光二极管，其特征在于：所述第二覆盖层为InyGa1-yAs，其中In组分为0%≦y≦5%，各层间的晶格匹配差异△a0<3800ppm。
5.根据权利要求4所述的红外发光二极管，其特征在于：所述所述第二覆盖层为InyGa1- yAs的In组分为2。
6.根据权利要求1所述的红外发光二极管，其特征在于：所述第一覆盖层为砷化铟镓，所述活性层的发光峰波长为930nm以上。
7.根据权利要求1所述的红外发光二极管，其特征在于：所述活性层为多量子阱结构，其中阱层和垒层具有相反方向的应变，其总应变量互相调和。
8.根据权利要求7所述的红外发光二极管，其特征在于：各层间的晶格匹配差异△a0<1500ppm。
9.根据权利要求1所述的红外发光二极管，其特征在于：所述发光二极管自上而下包括第一欧姆电极、接触层、第一覆盖层、活性层、第二覆盖层、缓冲层、GaAs衬底和第二型欧姆电极。
10.根据权利要求1所述的红外发光二极管，其特征在于：所述发光二极管自上而下包括第二型欧姆电极、接触层、第二覆盖层、活性层、第二型覆盖层、接触层、金属键合层、Si衬底和第一型欧姆电极。
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