JP5534763B2 - 半導体発光装置の製造方法及び半導体発光装置 - Google Patents
半導体発光装置の製造方法及び半導体発光装置 Download PDFInfo
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- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
また、本発明の他の一態様によれば、発光層と前記発光層が発する光が取り出される第1の主面と前記第1の主面の反対側の第2の主面とを有する半導体層と、前記半導体層の前記第2の主面側に設けられ、側面が第1の絶縁膜に覆われた第1の接合金属とを有するチップと、前記チップを支持し前記チップよりも平面サイズが大きい支持基板と、前記支持基板の主面上に設けられた第2の絶縁膜と、表面が前記第1の接合金属と接合され、側面が前記第2の絶縁膜に覆われた第2の接合金属と、を備えたことを特徴とする半導体発光装置が提供される。
ここで、接合金属32と接合金属33の下層の支持基板31側に第3の配線層を形成することも可能である。第3の配線層を形成することによって、コンタクト電極41の位置を任意に配置することが可能となり、例えば半導体チップ10が搭載された領域より外側にコンタクト電極41を形成することによって、パッド42のピッチを広げることができ、回路基板への実装を容易にすることができる。また、第3の配線層は支持基板31の下面に形成することも可能である。この場合には、コンタクト電極41を接合金属32、33の下に形成した後、支持基板31の下側でコンタクト電極41と電気的に接続された第3の配線層がパッド42に結線された構造となる。
Claims (7)
- 仮基板の主面上に、発光層を含む半導体層を成長させる工程と、
前記半導体層における、前記仮基板の主面に接する第1の主面の反対側の第2の主面側に第1の配線層を形成する工程と、
前記第1の配線層及び前記半導体層を貫通して前記仮基板に達する溝を形成し、前記溝によって前記半導体層及び前記第1の配線層をウェーハ状の前記仮基板上で複数のチップに分離する工程と、
支持基板の主面上に第2の配線層を形成する工程と、
ウェーハ状の前記仮基板の主面と前記支持基板の主面とを対向させ、前記仮基板上の複数の前記チップのうち隣り合わない複数の接合対象チップの各々の前記第1の配線層を一括して前記第2の配線層に接合させる工程と、
前記第2の配線層に対して接合された前記接合対象チップの前記第1の主面と前記仮基板との界面にレーザ光を照射して前記接合対象チップと前記仮基板とを分離させ、前記複数の接合対象チップを前記仮基板から前記支持基板に一括して移す工程と、
前記支持基板における前記チップが接合された部分より外側の部分を切断する工程と、
を備えたことを特徴とする半導体発光装置の製造方法。 - 前記支持基板に移されず前記仮基板に残された前記チップを、別の支持基板に移す工程をさらに備えたことを特徴とする請求項1記載の半導体発光装置の製造方法。
- 前記仮基板上で互いに等間隔で並んでいる複数の前記チップを前記接合対象チップとして前記支持基板に一括して移すことを特徴とする請求項1または2に記載の半導体発光装置の製造方法。
- 前記仮基板の主面と前記支持基板との主面を対向させて前記接合対象チップを前記第2の配線層に接合させた状態で、前記接合対象チップ以外のチップと前記支持基板との間に隙間が形成されることを特徴とする請求項1〜3のいずれか1つに記載の半導体発光装置の製造方法。
- 前記第1の配線層の側面を第1の絶縁膜で覆う工程をさらに備えた請求項1〜4のいずれか1つに記載の半導体発光装置の製造方法。
- 前記第2の配線層を形成する工程は、
前記支持基板の前記主面上に、第2の絶縁膜を形成する工程と、
前記第1の配線層との接合面以外が前記第2の絶縁膜に覆われた第2の接合金属を形成する工程と、
を有する請求項1〜5のいずれか1つに記載の半導体発光装置の製造方法。 - 発光層と前記発光層が発する光が取り出される第1の主面と前記第1の主面の反対側の第2の主面とを有する半導体層と、前記半導体層の前記第2の主面側に設けられ、側面が第1の絶縁膜に覆われた第1の接合金属とを有するチップと、
前記チップを支持し前記チップよりも平面サイズが大きい支持基板と、
前記支持基板の主面上に設けられた第2の絶縁膜と、
表面が前記第1の接合金属と接合され、側面が前記第2の絶縁膜に覆われた第2の接合金属と、
を備えたことを特徴とする半導体発光装置。
Priority Applications (4)
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JP2009220435A JP5534763B2 (ja) | 2009-09-25 | 2009-09-25 | 半導体発光装置の製造方法及び半導体発光装置 |
EP10154638.0A EP2302703A3 (en) | 2009-09-25 | 2010-02-25 | Method for manufacturing semiconductor light-emitting device and semiconductor light emitting device |
TW099105512A TWI419380B (zh) | 2009-09-25 | 2010-02-25 | 半導體發光裝置的製造方法及半導體發光裝置 |
US12/726,452 US8367523B2 (en) | 2009-09-25 | 2010-03-18 | Method for manufacturing semiconductor light-emitting device and semiconductor light emitting device |
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US (1) | US8367523B2 (ja) |
EP (1) | EP2302703A3 (ja) |
JP (1) | JP5534763B2 (ja) |
TW (1) | TWI419380B (ja) |
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JP5537446B2 (ja) | 2011-01-14 | 2014-07-02 | 株式会社東芝 | 発光装置、発光モジュール、発光装置の製造方法 |
JP5603793B2 (ja) | 2011-02-09 | 2014-10-08 | 株式会社東芝 | 半導体発光装置 |
JP5603813B2 (ja) | 2011-03-15 | 2014-10-08 | 株式会社東芝 | 半導体発光装置及び発光装置 |
JP5535114B2 (ja) | 2011-03-25 | 2014-07-02 | 株式会社東芝 | 発光装置、発光モジュール、発光装置の製造方法 |
DE102011015725B4 (de) * | 2011-03-31 | 2022-10-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Vereinzeln eines Bauelementverbunds |
JP5023229B1 (ja) * | 2011-04-27 | 2012-09-12 | 株式会社東芝 | 半導体発光素子の製造方法 |
JP5642623B2 (ja) | 2011-05-17 | 2014-12-17 | 株式会社東芝 | 半導体発光装置 |
CN107706279B (zh) * | 2011-06-01 | 2020-10-30 | 亮锐控股有限公司 | 发光器件以及将发光器件附着到支撑衬底的方法 |
CN111509103A (zh) * | 2011-06-01 | 2020-08-07 | 亮锐控股有限公司 | 键合到支撑衬底的发光器件 |
JP5662277B2 (ja) | 2011-08-08 | 2015-01-28 | 株式会社東芝 | 半導体発光装置及び発光モジュール |
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- 2010-02-25 EP EP10154638.0A patent/EP2302703A3/en not_active Withdrawn
- 2010-02-25 TW TW099105512A patent/TWI419380B/zh active
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TWI419380B (zh) | 2013-12-11 |
US8367523B2 (en) | 2013-02-05 |
JP2011071273A (ja) | 2011-04-07 |
US20110073890A1 (en) | 2011-03-31 |
EP2302703A2 (en) | 2011-03-30 |
TW201112459A (en) | 2011-04-01 |
EP2302703A3 (en) | 2014-04-30 |
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