PL380915A1 - Sposób wytwarzania azotkowego podłoża półprzewodnikowego oraz azotkowe podłoże półprzewodnikowe - Google Patents

Sposób wytwarzania azotkowego podłoża półprzewodnikowego oraz azotkowe podłoże półprzewodnikowe

Info

Publication number
PL380915A1
PL380915A1 PL380915A PL38091506A PL380915A1 PL 380915 A1 PL380915 A1 PL 380915A1 PL 380915 A PL380915 A PL 380915A PL 38091506 A PL38091506 A PL 38091506A PL 380915 A1 PL380915 A1 PL 380915A1
Authority
PL
Poland
Prior art keywords
nitride semiconductor
semiconductor base
manufacture
well
base
Prior art date
Application number
PL380915A
Other languages
English (en)
Other versions
PL218607B1 (pl
Inventor
Toru Takasone
Original Assignee
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corporation filed Critical Nichia Corporation
Publication of PL380915A1 publication Critical patent/PL380915A1/pl
Publication of PL218607B1 publication Critical patent/PL218607B1/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PL380915A 2005-10-28 2006-10-26 Sposób wytwarzania azotkowego podłoża półprzewodnikowego oraz azotkowe podłoże półprzewodnikowe PL218607B1 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005314688 2005-10-28
JP2006224023A JP5140962B2 (ja) 2005-10-28 2006-08-21 窒化物半導体基板の製造方法

Publications (2)

Publication Number Publication Date
PL380915A1 true PL380915A1 (pl) 2007-04-30
PL218607B1 PL218607B1 (pl) 2015-01-30

Family

ID=37995163

Family Applications (1)

Application Number Title Priority Date Filing Date
PL380915A PL218607B1 (pl) 2005-10-28 2006-10-26 Sposób wytwarzania azotkowego podłoża półprzewodnikowego oraz azotkowe podłoże półprzewodnikowe

Country Status (3)

Country Link
US (2) US7608525B2 (pl)
JP (1) JP5140962B2 (pl)
PL (1) PL218607B1 (pl)

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* Cited by examiner, † Cited by third party
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KR101553721B1 (ko) * 2007-02-16 2015-09-16 스미또모 가가꾸 가부시키가이샤 전계 효과 트랜지스터용 에피택셜 기판 및 전계 효과 트랜지스터
JP4915618B2 (ja) 2007-06-06 2012-04-11 澁谷工業株式会社 導電性ボールの配列装置
JP4888377B2 (ja) * 2007-12-22 2012-02-29 日立電線株式会社 窒化物半導体自立基板
EP2465141B1 (en) * 2009-08-04 2021-04-07 GaN Systems Inc. Gallium nitride microwave and power switching transistors with matrix layout
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
JP5365454B2 (ja) * 2009-09-30 2013-12-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体基板、エピタキシャル基板及び半導体デバイス
JP5458874B2 (ja) * 2009-12-25 2014-04-02 日亜化学工業株式会社 窒化物半導体の成長方法
AU2011241423A1 (en) 2010-04-13 2012-11-08 Gan Systems Inc. High density gallium nitride devices using island topology
EP2387081B1 (en) * 2010-05-11 2015-09-30 Samsung Electronics Co., Ltd. Semiconductor light emitting device and method for fabricating the same
TWI455426B (zh) * 2011-02-16 2014-10-01 Advanced Optoelectronic Tech 半導體鐳射器及其製造方法
JP6218728B2 (ja) * 2012-08-03 2017-10-25 シャープ株式会社 窒化物半導体素子構造体とその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4148047A (en) * 1978-01-16 1979-04-03 Honeywell Inc. Semiconductor apparatus
WO1993003502A1 (en) * 1991-07-26 1993-02-18 Nippondenso Co., Ltd. Method of producing vertical mosfet
JPH11191657A (ja) * 1997-04-11 1999-07-13 Nichia Chem Ind Ltd 窒化物半導体の成長方法及び窒化物半導体素子
EP0942459B1 (en) 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
JP3058620B2 (ja) * 1998-04-28 2000-07-04 京セラ株式会社 液晶表示装置
JP2000223417A (ja) * 1999-01-28 2000-08-11 Sony Corp 半導体の成長方法、半導体基板の製造方法および半導体装置の製造方法
JP4145437B2 (ja) * 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
US6627974B2 (en) * 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
JP4356208B2 (ja) 2000-08-01 2009-11-04 ソニー株式会社 窒化物半導体の気相成長方法
JP4043193B2 (ja) * 2001-01-11 2008-02-06 日亜化学工業株式会社 窒化物半導体基板及びその製造方法
US6562701B2 (en) 2001-03-23 2003-05-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing nitride semiconductor substrate
JP4201541B2 (ja) * 2002-07-19 2008-12-24 豊田合成株式会社 半導体結晶の製造方法及びｉｉｉ族窒化物系化合物半導体発光素子の製造方法
JP2004336040A (ja) * 2003-04-30 2004-11-25 Osram Opto Semiconductors Gmbh 複数の半導体チップの製造方法および電子半導体基体
US7622318B2 (en) 2004-03-30 2009-11-24 Sony Corporation Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device

Also Published As

Publication number Publication date
US7615472B2 (en) 2009-11-10
PL218607B1 (pl) 2015-01-30
JP2007150250A (ja) 2007-06-14
US7608525B2 (en) 2009-10-27
US20070096262A1 (en) 2007-05-03
JP5140962B2 (ja) 2013-02-13
US20090246945A1 (en) 2009-10-01

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