JP2009010353A5 - - Google Patents

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Publication number
JP2009010353A5
JP2009010353A5 JP2008136151A JP2008136151A JP2009010353A5 JP 2009010353 A5 JP2009010353 A5 JP 2009010353A5 JP 2008136151 A JP2008136151 A JP 2008136151A JP 2008136151 A JP2008136151 A JP 2008136151A JP 2009010353 A5 JP2009010353 A5 JP 2009010353A5
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JP
Japan
Prior art keywords
single crystal
crystal semiconductor
semiconductor substrates
manufacturing
semiconductor device
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JP2008136151A
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English (en)
Japanese (ja)
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JP2009010353A (ja
JP5348942B2 (ja
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Priority to JP2008136151A priority Critical patent/JP5348942B2/ja
Priority claimed from JP2008136151A external-priority patent/JP5348942B2/ja
Publication of JP2009010353A publication Critical patent/JP2009010353A/ja
Publication of JP2009010353A5 publication Critical patent/JP2009010353A5/ja
Application granted granted Critical
Publication of JP5348942B2 publication Critical patent/JP5348942B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008136151A 2007-06-01 2008-05-26 半導体装置の作製方法 Expired - Fee Related JP5348942B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008136151A JP5348942B2 (ja) 2007-06-01 2008-05-26 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007146889 2007-06-01
JP2007146889 2007-06-01
JP2008136151A JP5348942B2 (ja) 2007-06-01 2008-05-26 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009010353A JP2009010353A (ja) 2009-01-15
JP2009010353A5 true JP2009010353A5 (enExample) 2011-06-23
JP5348942B2 JP5348942B2 (ja) 2013-11-20

Family

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Family Applications (1)

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JP2008136151A Expired - Fee Related JP5348942B2 (ja) 2007-06-01 2008-05-26 半導体装置の作製方法

Country Status (5)

Country Link
US (1) US7863155B2 (enExample)
JP (1) JP5348942B2 (enExample)
KR (1) KR101495153B1 (enExample)
CN (1) CN101681807B (enExample)
WO (1) WO2008149699A1 (enExample)

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JP4116587B2 (ja) * 2004-04-13 2008-07-09 浜松ホトニクス株式会社 半導体発光素子及びその製造方法
KR101404781B1 (ko) * 2007-06-28 2014-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
US8431451B2 (en) 2007-06-29 2013-04-30 Semicondutor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP5498670B2 (ja) 2007-07-13 2014-05-21 株式会社半導体エネルギー研究所 半導体基板の作製方法
TWI493609B (zh) * 2007-10-23 2015-07-21 Semiconductor Energy Lab 半導體基板、顯示面板及顯示裝置的製造方法
JP5700617B2 (ja) * 2008-07-08 2015-04-15 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
SG178765A1 (en) * 2009-01-21 2012-03-29 Semiconductor Energy Lab Method for manufacturing soi substrate and semiconductor device
JP5453947B2 (ja) * 2009-06-17 2014-03-26 ソニー株式会社 固体撮像素子の製造方法
JP2011227369A (ja) * 2010-04-22 2011-11-10 Hitachi Displays Ltd 画像表示装置及びその製造方法
CN104058363B (zh) * 2013-03-22 2016-01-20 上海丽恒光微电子科技有限公司 基于mems透射光阀的显示装置及其形成方法
JP5549769B1 (ja) * 2013-08-26 2014-07-16 Ｔｄｋ株式会社 モジュール部品の製造方法
EP3221885B1 (en) 2014-11-18 2019-10-23 GlobalWafers Co., Ltd. High resistivity semiconductor-on-insulator wafer and a method of manufacturing
WO2016081367A1 (en) 2014-11-18 2016-05-26 Sunedison Semiconductor Limited HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION
FR3029538B1 (fr) * 2014-12-04 2019-04-26 Soitec Procede de transfert de couche
EP4120320A1 (en) 2015-03-03 2023-01-18 GlobalWafers Co., Ltd. Charge trapping polycrystalline silicon films on silicon substrates with controllable film stress
US10332782B2 (en) 2015-06-01 2019-06-25 Globalwafers Co., Ltd. Method of manufacturing silicon germanium-on-insulator
CN108780776B (zh) 2015-11-20 2023-09-29 环球晶圆股份有限公司 使半导体表面平整的制造方法
WO2017155806A1 (en) * 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof
US11114332B2 (en) 2016-03-07 2021-09-07 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
CN111201341B (zh) 2016-06-08 2023-04-04 环球晶圆股份有限公司 具有经改进的机械强度的高电阻率单晶硅锭及晶片
US10269617B2 (en) 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
JP6810578B2 (ja) * 2016-11-18 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法
KR102463727B1 (ko) 2018-06-08 2022-11-07 글로벌웨이퍼스 씨오., 엘티디. 얇은 실리콘 층의 전사 방법
CN111081531B (zh) * 2019-10-30 2022-03-18 华灿光电（浙江）有限公司 外延层剥离方法

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JPS6461943A (en) * 1987-09-02 1989-03-08 Seiko Epson Corp Semiconductor device and manufacture thereof
US5013681A (en) * 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
JPH0618926A (ja) * 1992-07-02 1994-01-28 Sharp Corp 液晶表示用大型基板およびその製造方法
TW317643B (enExample) * 1996-02-23 1997-10-11 Handotai Energy Kenkyusho Kk
KR19980033377A (ko) * 1996-10-31 1998-07-25 이데이노부유끼 박막 반도체 소자와 그 제조 방법 및 제조 장치, 및 박막 단결정 반도체 태양 전지와 그 제조 방법
JPH11163363A (ja) * 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP2003029656A (ja) * 2001-07-13 2003-01-31 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
CN100403543C (zh) * 2001-12-04 2008-07-16 信越半导体株式会社 贴合晶片及贴合晶片的制造方法
US7119365B2 (en) 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP4103447B2 (ja) * 2002-04-30 2008-06-18 株式会社Ｉｈｉ 大面積単結晶シリコン基板の製造方法
JP2003332280A (ja) * 2002-05-14 2003-11-21 Disco Abrasive Syst Ltd 半導体ウェハの支持方法
FR2842350B1 (fr) * 2002-07-09 2005-05-13 Procede de transfert d'une couche de materiau semiconducteur contraint
US6953736B2 (en) * 2002-07-09 2005-10-11 S.O.I.Tec Silicon On Insulator Technologies S.A. Process for transferring a layer of strained semiconductor material
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