JPS6461943A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6461943A JPS6461943A JP22000087A JP22000087A JPS6461943A JP S6461943 A JPS6461943 A JP S6461943A JP 22000087 A JP22000087 A JP 22000087A JP 22000087 A JP22000087 A JP 22000087A JP S6461943 A JPS6461943 A JP S6461943A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- substrate
- pieces
- insulating substrate
- soi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To enable a silicon-on-insulator (SOI) substrate to have a large caliber easily, by arranging silicon layers of a plurality of pieces which are cut square on an insulating substrate and after that, by sticking the above pieces of the silicon layers fast to each other, thereby performing prescribed heat treatment at the SOI substrate which is formed by composing semiconductor layers on the insulating substrate. CONSTITUTION:Silicon wafers 2 are cut square. In such a case excellent machinability with high accuracy which is free from burrs can be obtained by full-cutting off the silicon wafers with a cutter. Then in insulating substrate adheres completely to silicon layers of a plurality of pieces by treating them with heat at a temperature around 1000 deg.C. And then the silicon wafers 2 are shaped into thin films. In this way the SOI substrate having a large caliber is formed at a low price.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22000087A JPS6461943A (en) | 1987-09-02 | 1987-09-02 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22000087A JPS6461943A (en) | 1987-09-02 | 1987-09-02 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461943A true JPS6461943A (en) | 1989-03-08 |
Family
ID=16744361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22000087A Pending JPS6461943A (en) | 1987-09-02 | 1987-09-02 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461943A (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999001899A1 (en) * | 1997-07-03 | 1999-01-14 | Seiko Epson Corporation | Method of transferring thin film devices, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display, and electronic apparatus |
JP2003324188A (en) * | 2002-04-30 | 2003-11-14 | Ishikawajima Harima Heavy Ind Co Ltd | Method for manufacturing large-area single-crystal silicon substrate |
JP2008235723A (en) * | 2007-03-22 | 2008-10-02 | Zycube:Kk | Wafer body structure and manufacturing method thereof |
WO2008123117A1 (en) * | 2007-03-26 | 2008-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Soi substrate and method for manufacturing soi substrate |
WO2008149699A1 (en) * | 2007-06-01 | 2008-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor substrate and semiconductor device |
JP2008311621A (en) * | 2007-05-11 | 2008-12-25 | Semiconductor Energy Lab Co Ltd | Manufacturing method of soi substrate and manufacturing method of semiconductor device |
JP2009033137A (en) * | 2007-06-28 | 2009-02-12 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor |
JP2009135472A (en) * | 2007-11-05 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
JP2009135451A (en) * | 2007-10-23 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | Semiconductor substrate, display panel, and method of manufacturing display |
JP2010087345A (en) * | 2008-10-01 | 2010-04-15 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor substrate |
US7795114B2 (en) | 2007-08-10 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of SOI substrate and semiconductor device |
US7829431B2 (en) | 2007-07-13 | 2010-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a SOI with plurality of single crystal substrates |
US8048728B2 (en) | 2007-04-13 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device, method for manufacturing display device, and SOI substrate |
US8101466B2 (en) | 2007-03-26 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | SOI substrate and method for manufacturing SOI substrate |
US8431451B2 (en) | 2007-06-29 | 2013-04-30 | Semicondutor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
-
1987
- 1987-09-02 JP JP22000087A patent/JPS6461943A/en active Pending
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999001899A1 (en) * | 1997-07-03 | 1999-01-14 | Seiko Epson Corporation | Method of transferring thin film devices, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display, and electronic apparatus |
US6521511B1 (en) | 1997-07-03 | 2003-02-18 | Seiko Epson Corporation | Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus |
US6878607B2 (en) | 1997-07-03 | 2005-04-12 | Seiko Epson Corporation | Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus |
JP2003324188A (en) * | 2002-04-30 | 2003-11-14 | Ishikawajima Harima Heavy Ind Co Ltd | Method for manufacturing large-area single-crystal silicon substrate |
JP2008235723A (en) * | 2007-03-22 | 2008-10-02 | Zycube:Kk | Wafer body structure and manufacturing method thereof |
US8101466B2 (en) | 2007-03-26 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | SOI substrate and method for manufacturing SOI substrate |
WO2008123117A1 (en) * | 2007-03-26 | 2008-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Soi substrate and method for manufacturing soi substrate |
US9111997B2 (en) | 2007-03-26 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | SOI substrate and method for manufacturing SOI substrate |
JP2008270772A (en) * | 2007-03-26 | 2008-11-06 | Semiconductor Energy Lab Co Ltd | Soi substrate and manufacturing method thereof |
US8222117B2 (en) | 2007-03-26 | 2012-07-17 | Semiconductor Energy Laboratory Co., Ltd. | SOI substrate and method for manufacturing SOI substrate |
US8748243B2 (en) | 2007-04-13 | 2014-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device, method for manufacturing display device, and SOI substrate |
US8048728B2 (en) | 2007-04-13 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device, method for manufacturing display device, and SOI substrate |
JP2008311621A (en) * | 2007-05-11 | 2008-12-25 | Semiconductor Energy Lab Co Ltd | Manufacturing method of soi substrate and manufacturing method of semiconductor device |
WO2008149699A1 (en) * | 2007-06-01 | 2008-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor substrate and semiconductor device |
US7863155B2 (en) | 2007-06-01 | 2011-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor substrate and semiconductor device |
JP2009033137A (en) * | 2007-06-28 | 2009-02-12 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor |
US8283238B2 (en) | 2007-06-28 | 2012-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Layer transfer process for semiconductor device |
US8431451B2 (en) | 2007-06-29 | 2013-04-30 | Semicondutor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US7829431B2 (en) | 2007-07-13 | 2010-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a SOI with plurality of single crystal substrates |
US7994023B2 (en) | 2007-08-10 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of SOI substrate and semiconductor device |
US7795114B2 (en) | 2007-08-10 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of SOI substrate and semiconductor device |
JP2009135451A (en) * | 2007-10-23 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | Semiconductor substrate, display panel, and method of manufacturing display |
JP2009135472A (en) * | 2007-11-05 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
JP2010087345A (en) * | 2008-10-01 | 2010-04-15 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor substrate |
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