JPS6461943A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6461943A
JPS6461943A JP22000087A JP22000087A JPS6461943A JP S6461943 A JPS6461943 A JP S6461943A JP 22000087 A JP22000087 A JP 22000087A JP 22000087 A JP22000087 A JP 22000087A JP S6461943 A JPS6461943 A JP S6461943A
Authority
JP
Japan
Prior art keywords
silicon
substrate
pieces
insulating substrate
soi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22000087A
Other languages
Japanese (ja)
Inventor
Wakao Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP22000087A priority Critical patent/JPS6461943A/en
Publication of JPS6461943A publication Critical patent/JPS6461943A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable a silicon-on-insulator (SOI) substrate to have a large caliber easily, by arranging silicon layers of a plurality of pieces which are cut square on an insulating substrate and after that, by sticking the above pieces of the silicon layers fast to each other, thereby performing prescribed heat treatment at the SOI substrate which is formed by composing semiconductor layers on the insulating substrate. CONSTITUTION:Silicon wafers 2 are cut square. In such a case excellent machinability with high accuracy which is free from burrs can be obtained by full-cutting off the silicon wafers with a cutter. Then in insulating substrate adheres completely to silicon layers of a plurality of pieces by treating them with heat at a temperature around 1000 deg.C. And then the silicon wafers 2 are shaped into thin films. In this way the SOI substrate having a large caliber is formed at a low price.
JP22000087A 1987-09-02 1987-09-02 Semiconductor device and manufacture thereof Pending JPS6461943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22000087A JPS6461943A (en) 1987-09-02 1987-09-02 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22000087A JPS6461943A (en) 1987-09-02 1987-09-02 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6461943A true JPS6461943A (en) 1989-03-08

Family

ID=16744361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22000087A Pending JPS6461943A (en) 1987-09-02 1987-09-02 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6461943A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999001899A1 (en) * 1997-07-03 1999-01-14 Seiko Epson Corporation Method of transferring thin film devices, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display, and electronic apparatus
JP2003324188A (en) * 2002-04-30 2003-11-14 Ishikawajima Harima Heavy Ind Co Ltd Method for manufacturing large-area single-crystal silicon substrate
JP2008235723A (en) * 2007-03-22 2008-10-02 Zycube:Kk Wafer body structure and manufacturing method thereof
WO2008123117A1 (en) * 2007-03-26 2008-10-16 Semiconductor Energy Laboratory Co., Ltd. Soi substrate and method for manufacturing soi substrate
WO2008149699A1 (en) * 2007-06-01 2008-12-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor substrate and semiconductor device
JP2008311621A (en) * 2007-05-11 2008-12-25 Semiconductor Energy Lab Co Ltd Manufacturing method of soi substrate and manufacturing method of semiconductor device
JP2009033137A (en) * 2007-06-28 2009-02-12 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor
JP2009135472A (en) * 2007-11-05 2009-06-18 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
JP2009135451A (en) * 2007-10-23 2009-06-18 Semiconductor Energy Lab Co Ltd Semiconductor substrate, display panel, and method of manufacturing display
JP2010087345A (en) * 2008-10-01 2010-04-15 Semiconductor Energy Lab Co Ltd Manufacturing method of semiconductor substrate
US7795114B2 (en) 2007-08-10 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of SOI substrate and semiconductor device
US7829431B2 (en) 2007-07-13 2010-11-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a SOI with plurality of single crystal substrates
US8048728B2 (en) 2007-04-13 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing display device, and SOI substrate
US8101466B2 (en) 2007-03-26 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and method for manufacturing SOI substrate
US8431451B2 (en) 2007-06-29 2013-04-30 Semicondutor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999001899A1 (en) * 1997-07-03 1999-01-14 Seiko Epson Corporation Method of transferring thin film devices, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display, and electronic apparatus
US6521511B1 (en) 1997-07-03 2003-02-18 Seiko Epson Corporation Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus
US6878607B2 (en) 1997-07-03 2005-04-12 Seiko Epson Corporation Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus
JP2003324188A (en) * 2002-04-30 2003-11-14 Ishikawajima Harima Heavy Ind Co Ltd Method for manufacturing large-area single-crystal silicon substrate
JP2008235723A (en) * 2007-03-22 2008-10-02 Zycube:Kk Wafer body structure and manufacturing method thereof
US8101466B2 (en) 2007-03-26 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and method for manufacturing SOI substrate
WO2008123117A1 (en) * 2007-03-26 2008-10-16 Semiconductor Energy Laboratory Co., Ltd. Soi substrate and method for manufacturing soi substrate
US9111997B2 (en) 2007-03-26 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and method for manufacturing SOI substrate
JP2008270772A (en) * 2007-03-26 2008-11-06 Semiconductor Energy Lab Co Ltd Soi substrate and manufacturing method thereof
US8222117B2 (en) 2007-03-26 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and method for manufacturing SOI substrate
US8748243B2 (en) 2007-04-13 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing display device, and SOI substrate
US8048728B2 (en) 2007-04-13 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing display device, and SOI substrate
JP2008311621A (en) * 2007-05-11 2008-12-25 Semiconductor Energy Lab Co Ltd Manufacturing method of soi substrate and manufacturing method of semiconductor device
WO2008149699A1 (en) * 2007-06-01 2008-12-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor substrate and semiconductor device
US7863155B2 (en) 2007-06-01 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor substrate and semiconductor device
JP2009033137A (en) * 2007-06-28 2009-02-12 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor
US8283238B2 (en) 2007-06-28 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Layer transfer process for semiconductor device
US8431451B2 (en) 2007-06-29 2013-04-30 Semicondutor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US7829431B2 (en) 2007-07-13 2010-11-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a SOI with plurality of single crystal substrates
US7994023B2 (en) 2007-08-10 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of SOI substrate and semiconductor device
US7795114B2 (en) 2007-08-10 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of SOI substrate and semiconductor device
JP2009135451A (en) * 2007-10-23 2009-06-18 Semiconductor Energy Lab Co Ltd Semiconductor substrate, display panel, and method of manufacturing display
JP2009135472A (en) * 2007-11-05 2009-06-18 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
JP2010087345A (en) * 2008-10-01 2010-04-15 Semiconductor Energy Lab Co Ltd Manufacturing method of semiconductor substrate

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