JP2003324188A - Method for manufacturing large-area single-crystal silicon substrate - Google Patents
Method for manufacturing large-area single-crystal silicon substrateInfo
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- JP2003324188A JP2003324188A JP2002128582A JP2002128582A JP2003324188A JP 2003324188 A JP2003324188 A JP 2003324188A JP 2002128582 A JP2002128582 A JP 2002128582A JP 2002128582 A JP2002128582 A JP 2002128582A JP 2003324188 A JP2003324188 A JP 2003324188A
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- crystal silicon
- single crystal
- thin film
- silicon thin
- film
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、大面積単結晶シリ
コン基板の製造方法に係り、特に、大面積のガラス基板
表面に単結晶シリコン薄膜を製造する方法に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a large area single crystal silicon substrate, and more particularly to a method for manufacturing a single crystal silicon thin film on the surface of a large area glass substrate.
【０００２】[0002]
【従来の技術】近年、パソコン、携帯情報端末、及びテ
レビ等の表示手段として液晶ディスプレイの需要が高ま
っている。現在、液晶ディスプレイの駆動回路・制御回
路等を構成する薄膜トランジスタ（ＴＦＴ）は、主に、
ガラス基板上に多結晶シリコン（特に、低温ポリシリコ
ン）膜を形成してなるものである。低温ポリシリコン膜
は、ガラス基板表面に形成したアモルファスシリコン膜
をエキシマレーザ等によって結晶化させることで形成さ
れ、近年では、粒径が数μｍ以上という大粒径結晶構造
の、低温ポリシリコン結晶粒が得られている。2. Description of the Related Art In recent years, there has been an increasing demand for liquid crystal displays as display means for personal computers, personal digital assistants, televisions and the like. Currently, thin film transistors (TFTs) that make up drive circuits and control circuits of liquid crystal displays are mainly
It is formed by forming a polycrystalline silicon (particularly low temperature polysilicon) film on a glass substrate. The low-temperature polysilicon film is formed by crystallizing an amorphous silicon film formed on the surface of a glass substrate by an excimer laser or the like, and in recent years, a low-temperature polysilicon crystal grain having a large grain size crystal structure with a grain size of several μm or more. Has been obtained.
【０００３】この低温ポリシリコン膜は、結晶粒成長の
際に種結晶を用いていないため、各結晶粒の結晶方位は
それぞれバラバラで、不揃いである。ここで、ガラス基
板表面に形成するシリコン膜として好ましいものは、各
結晶粒の結晶方位の揃ったシリコン膜、理想的には単結
晶シリコン膜である。Since this low-temperature polysilicon film does not use a seed crystal during crystal grain growth, the crystal orientation of each crystal grain is different and non-uniform. Here, a preferable silicon film formed on the surface of the glass substrate is a silicon film in which the crystal orientation of each crystal grain is uniform, and ideally a single crystal silicon film.
【０００４】近年、絶縁基板の表面に、単結晶のシリコ
ンウェハから剥離させた単結晶シリコン薄膜を接合する
ことにより、絶縁基板表面が単結晶シリコン薄膜で覆わ
れたＳＯＩ（Silicon On Insulator）ウェハを製造する
方法が提案されている（特開平１１−１４５４３８号公
報等参照）。In recent years, an SOI (Silicon On Insulator) wafer in which the surface of an insulating substrate is covered with a single crystal silicon thin film is formed by bonding a single crystal silicon thin film separated from a single crystal silicon wafer to the surface of the insulating substrate. A manufacturing method has been proposed (see JP-A No. 11-145438, etc.).
【０００５】[0005]
【発明が解決しようとする課題】ところで、現行の単結
晶シリコンウェハはその径が最大でφ１２インチ（約φ
３００ｍｍ）であることから、単結晶シリコン薄膜の径
もφ１２インチが限界である。これに対して、液晶ディ
スプレイなどで用いられている大面積のガラス基板は、
そのサイズが、例えば６００ｍｍ×７２０ｍｍもあり、
単結晶シリコンウェハと比較して面積が非常に大きい。
このため、従来、大面積のガラス基板表面を単結晶シリ
コン薄膜で覆ったＳＯＩウェハは、製造することができ
なかった。By the way, the current single crystal silicon wafer has a maximum diameter of 12 inches (about φ).
The diameter of the single crystal silicon thin film is limited to φ12 inches. On the other hand, large-area glass substrates used in liquid crystal displays, etc.
Its size is, for example, 600mm x 720mm,
The area is very large compared to a single crystal silicon wafer.
Therefore, conventionally, an SOI wafer in which the surface of a glass substrate having a large area is covered with a single crystal silicon thin film cannot be manufactured.
【０００６】以上の事情を考慮して創案された本発明の
目的は、大面積のガラス基板を用いた大面積単結晶シリ
コン基板の製造方法を提供することにある。An object of the present invention, which was conceived in consideration of the above circumstances, is to provide a method for manufacturing a large area single crystal silicon substrate using a large area glass substrate.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成すべく本
発明に係る大面積単結晶シリコン基板の製造方法は、単
結晶シリコンウェハから単結晶シリコン薄膜を剥離形成
し、その単結晶シリコン薄膜を複数枚、結晶方位を揃え
てガラス基板表面に貼設し、その後、ガラス基板表面に
アモルファスシリコン膜を形成して各単結晶シリコン薄
膜全体を覆い、その後、アモルファスシリコン膜の表面
にエッチング処理を施して各単結晶シリコン薄膜の表面
を露出させ、その後、残りのアモルファスシリコン膜を
各単結晶シリコン薄膜の結晶方位に倣って単結晶化する
結晶化処理を施し、ガラス基板の表面全面に単結晶シリ
コン薄膜を形成するものである。In order to achieve the above object, a method for manufacturing a large-area single crystal silicon substrate according to the present invention is to separate a single crystal silicon thin film from a single crystal silicon wafer to form the single crystal silicon thin film. A plurality of sheets are attached to the glass substrate surface with the crystal orientations aligned, and then an amorphous silicon film is formed on the glass substrate surface to cover each single crystal silicon thin film, and then the surface of the amorphous silicon film is subjected to etching treatment. To expose the surface of each single-crystal silicon thin film, and then subject the remaining amorphous silicon film to single-crystallization in accordance with the crystal orientation of each single-crystal silicon thin film, and then the single-crystal silicon on the entire surface of the glass substrate. It forms a thin film.
【０００８】また、上記エッチング処理後、各単結晶シ
リコン薄膜とアモルファスシリコン膜との界面へのレー
ザ照射を順次繰り返して結晶化処理を施してもよい。After the etching process, the crystallization process may be performed by sequentially repeating laser irradiation to the interface between each single crystal silicon thin film and the amorphous silicon film.
【０００９】また、上記エッチング処理後、ガラス基板
全体を加熱炉内で加熱して結晶化処理を施してもよい。After the above etching treatment, the entire glass substrate may be heated in a heating furnace for crystallization treatment.
【００１０】また、上記結晶化処理後、単結晶シリコン
薄膜の表面全面に平滑化処理を施してもよい。After the crystallization process, the entire surface of the single crystal silicon thin film may be smoothed.
【００１１】以上の方法によれば、大面積のガラス基板
であっても、その表面に単結晶のシリコン薄膜を形成す
ることができる。According to the above method, a single crystal silicon thin film can be formed on the surface of a glass substrate having a large area.
【００１２】[0012]
【発明の実施の形態】以下、本発明の好適一実施の形態
を添付図面に基いて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the accompanying drawings.
【００１３】第１の実施の形態に係る大面積単結晶シリ
コン基板の製造方法を説明するための斜視概略図を図１
〜図５に示す。FIG. 1 is a schematic perspective view for explaining a method of manufacturing a large-area single crystal silicon substrate according to the first embodiment.
~ Shown in FIG.
【００１４】本実施の形態に係る大面積単結晶シリコン
基板の製造方法は、先ず、図１（ａ）に示すように、水
素イオン剥離法（スマートカット法）により、単結晶シ
リコンウェハ１１の表面から水素イオンを注入し、ウェ
ハ１１内部に水素イオンを浸入させて微小気泡層（図示
せず）を形成する。その後、ウェハ１１に熱処理を施
し、結晶の再配列と気泡の凝集とによって、微小気泡層
を劈開面として膜厚が数十ｎｍ〜１μｍの単結晶シリコ
ン薄膜１２を剥離形成する。その後、図１（ｂ）に示す
ように、単結晶シリコン薄膜１２を所定形状、例えば、
図１（ｂ）中では矩形状に切断する。In the method of manufacturing a large area single crystal silicon substrate according to the present embodiment, first, as shown in FIG. 1A, the surface of the single crystal silicon wafer 11 is formed by a hydrogen ion stripping method (smart cut method). Hydrogen ions are injected from the inside to inject the hydrogen ions into the inside of the wafer 11 to form a fine bubble layer (not shown). Then, the wafer 11 is heat-treated to rearrange the crystals and agglomerate the bubbles to form a single crystal silicon thin film 12 having a film thickness of several tens of nm to 1 μm with the microbubble layer as a cleavage plane. Thereafter, as shown in FIG. 1B, the single crystal silicon thin film 12 is formed into a predetermined shape, for example,
In FIG. 1B, it is cut into a rectangular shape.
【００１５】その後、図２に示すように、複数枚（図２
中では４枚）の単結晶シリコン薄膜１２を、結晶方位を
揃えてガラス基板２１の表面に貼設する。この時、結晶
方位を揃えることなくガラス基板２１の表面に各単結晶
シリコン薄膜１２を貼設すると、後述するアモルファス
シリコン部３２を再結晶化する際、各単結晶シリコン薄
膜１２の界面にミスフィット（不整合）が生じるために
好ましくない。ここでいうガラス基板２１は、石英基板
（シリコン基板）を含む広義のものである。After that, as shown in FIG. 2, a plurality of sheets (see FIG.
The four single crystal silicon thin films 12 are attached to the surface of the glass substrate 21 with their crystal orientations aligned. At this time, if each single crystal silicon thin film 12 is adhered to the surface of the glass substrate 21 without aligning the crystal orientation, when recrystallizing the amorphous silicon portion 32 described later, it is misfit to the interface of each single crystal silicon thin film 12. (Mismatch) occurs, which is not preferable. The glass substrate 21 referred to here is in a broad sense including a quartz substrate (silicon substrate).
【００１６】その後、図３に示すように、ガラス基板２
１の表面に、蒸着などの方法により、各単結晶シリコン
薄膜１２全体を覆うようにアモルファスシリコン膜３１
を形成する。Thereafter, as shown in FIG. 3, the glass substrate 2
Amorphous silicon film 31 is formed on the surface of No. 1 by vapor deposition or the like so as to cover the entire single crystal silicon thin film 12.
To form.
【００１７】その後、アモルファスシリコン膜３１の表
面にエッチング処理を施して、図４に示すように、各単
結晶シリコン薄膜１２の表面１２ａを露出させること
で、各単結晶シリコン薄膜１２の周りにアモルファスシ
リコン部（残りのアモルファスシリコン膜３１）４１を
形成、即ち、各単結晶シリコン薄膜１２の周りをアモル
ファスシリコン部４１が取り囲んだ表面部４２を形成す
る。Thereafter, the surface of the amorphous silicon film 31 is subjected to an etching treatment to expose the surface 12a of each single crystal silicon thin film 12 as shown in FIG. A silicon portion (remaining amorphous silicon film 31) 41 is formed, that is, a surface portion 42 in which the amorphous silicon portion 41 surrounds each single crystal silicon thin film 12 is formed.
【００１８】その後、アモルファスシリコン部４１に対
して結晶化処理を施し、アモルファスシリコン部４１を
各単結晶シリコン薄膜１２の結晶方位に倣って単結晶化
する。具体的には、各単結晶シリコン薄膜１２とアモル
ファスシリコン部４１との境界部にエキシマレーザなど
のレーザ源からレーザを照射する。このレーザの照射に
よって、レーザ照射されたアモルファスシリコン部４１
は溶融し、その後の急冷によって再結晶化する。この再
結晶時、各単結晶シリコン薄膜１２が種結晶として作用
するため、溶融されたアモルファスシリコン部４１は、
各単結晶シリコン薄膜１２と同じ結晶方位で単結晶成長
する。After that, the amorphous silicon portion 41 is subjected to a crystallization treatment, and the amorphous silicon portion 41 is single-crystallized in accordance with the crystal orientation of each single-crystal silicon thin film 12. Specifically, the boundary between each single crystal silicon thin film 12 and the amorphous silicon portion 41 is irradiated with a laser from a laser source such as an excimer laser. By the laser irradiation, the amorphous silicon portion 41 irradiated by the laser is irradiated.
Melts and is recrystallized by subsequent quenching. During this recrystallization, each single crystal silicon thin film 12 acts as a seed crystal, so that the melted amorphous silicon portion 41 is
A single crystal is grown in the same crystal orientation as each single crystal silicon thin film 12.
【００１９】その後、各単結晶シリコン薄膜１２とアモ
ルファスシリコン部４１との境界部から各単結晶シリコ
ン薄膜１２の中間部に向かって、順次、照射域を移動さ
せながらレーザ照射することで、アモルファスシリコン
部４１が全て単結晶化し、図５に示すように、ガラス基
板２１の表面全面に単結晶シリコン薄膜５１が形成され
る。ここで、各単結晶シリコン薄膜１２の結晶方位が全
て同一であった場合、各単結晶シリコン薄膜１２の界面
においてミスフィット（不整合）が生じることはなく、
単結晶シリコン薄膜５１は完全な単結晶体となる。Thereafter, laser irradiation is performed while sequentially moving the irradiation area from the boundary portion between each single crystal silicon thin film 12 and the amorphous silicon portion 41 toward the middle portion of each single crystal silicon thin film 12, whereby amorphous silicon is obtained. The portion 41 is entirely made into a single crystal, and a single crystal silicon thin film 51 is formed on the entire surface of the glass substrate 21 as shown in FIG. Here, when the crystal orientations of the single crystal silicon thin films 12 are all the same, no misfit (mismatch) occurs at the interface of the single crystal silicon thin films 12,
The single crystal silicon thin film 51 becomes a complete single crystal.
【００２０】最後に、単結晶シリコン薄膜５１の表面
に、適宜、ＣＭＰ（Chemical Mechanical Polishing）
等による平滑処理を施して平滑化を図り、任意の膜厚ｔ
の単結晶シリコン薄膜５１を得る。Finally, CMP (Chemical Mechanical Polishing) is appropriately performed on the surface of the single crystal silicon thin film 51.
A smoothing process is performed to achieve smoothness, and an arbitrary film thickness t
A single crystal silicon thin film 51 of is obtained.
【００２１】ここで、各単結晶シリコン薄膜１２の形
状、サイズ、及び配置間隔、つまり表面部４２に占める
アモルファスシリコン部４１の割合によって、アモルフ
ァスシリコン部４１の単結晶化の可否が左右されること
はなく、単結晶シリコン薄膜１２同士の配置間隔が非常
に大きくても、アモルファスシリコン部４１を単結晶化
することができる。また、各単結晶シリコン薄膜１２同
士の配置間隔を数μｍ程度に制御することができた場
合、レーザを１ショット照射するだけでアモルファスシ
リコン部４１を単結晶化することができる。Whether or not the amorphous silicon portion 41 can be single-crystallized depends on the shape, size, and arrangement interval of each single-crystal silicon thin film 12, that is, the ratio of the amorphous silicon portion 41 to the surface portion 42. Even if the arrangement interval between the single crystal silicon thin films 12 is very large, the amorphous silicon portion 41 can be single crystallized. Further, when the arrangement interval between the single crystal silicon thin films 12 can be controlled to about several μm, the amorphous silicon portion 41 can be single crystallized by only irradiating the laser with one shot.
【００２２】表面部４２に占めるアモルファスシリコン
部４１の割合は、特に限定するものではないが、アモル
ファスシリコン部４１を単結晶化するのに要する時間を
短くするためにも、表面部４２に占めるアモルファスシ
リコン部４１の割合は小さい方が好ましい。このため、
その割合が小さくなるように、各単結晶シリコン薄膜１
２の形状、サイズ、及び配置間隔を調整することが好ま
しい。The proportion of the amorphous silicon portion 41 in the surface portion 42 is not particularly limited, but in order to shorten the time required to single-crystallize the amorphous silicon portion 41, the amorphous portion in the surface portion 42 is occupied. It is preferable that the proportion of the silicon portion 41 is small. For this reason,
Each single crystal silicon thin film 1 so that the ratio becomes small.
It is preferable to adjust the shape, size, and arrangement interval of the two.
【００２３】単結晶シリコン薄膜５１の膜厚ｔは、各単
結晶シリコン薄膜１２の膜厚以下であり、できるだけ薄
い方が好ましいが、特に限定するものではなく、例え
ば、５０〜１００ｎｍ程度である。この膜厚ｔは、エッ
チング処理及び／又は平滑処理によって任意に調整可能
である。The film thickness t of the single crystal silicon thin film 51 is equal to or less than the film thickness of each single crystal silicon thin film 12 and is preferably as thin as possible, but is not particularly limited and is, for example, about 50 to 100 nm. This film thickness t can be arbitrarily adjusted by an etching process and / or a smoothing process.
【００２４】レーザ源としては、パルス発振レーザ又は
連続発振レーザ（ＣＷレーザ）のいずれを用いてもよ
い。As the laser source, either a pulsed laser or a continuous wave laser (CW laser) may be used.
【００２５】以上、本実施の形態の製造方法によれば、
シリコンウェハと比較して面積が大きい大面積のガラス
基板であっても、その表面に単結晶シリコン薄膜を形成
することができる。As described above, according to the manufacturing method of the present embodiment,
Even with a large-area glass substrate having a larger area than a silicon wafer, a single crystal silicon thin film can be formed on the surface thereof.
【００２６】また、本実施の形態の製造方法により得ら
れた大面積単結晶シリコン基板は、各種の表示手段の下
地シリコン基板などとして用いることができ、その適用
範囲は広い。Further, the large area single crystal silicon substrate obtained by the manufacturing method of the present embodiment can be used as a base silicon substrate for various display means, and its applicable range is wide.
【００２７】次に、本発明の他の実施の形態を添付図面
に基いて説明する。Next, another embodiment of the present invention will be described with reference to the accompanying drawings.
【００２８】前実施の形態においては、アモルファスシ
リコン部４１を各単結晶シリコン薄膜１２の結晶方位に
倣って単結晶化する際、各単結晶シリコン薄膜１２とア
モルファスシリコン部４１との境界部にレーザを照射す
ることで、結晶化処理を行っていた。In the previous embodiment, when the amorphous silicon portion 41 is single-crystallized according to the crystal orientation of each single crystal silicon thin film 12, a laser is provided at the boundary between each single crystal silicon thin film 12 and the amorphous silicon portion 41. The crystallization process was performed by irradiating with.
【００２９】これに対して、第２の実施の形態に係る大
面積単結晶シリコン基板の製造方法は、エッチング処理
後のガラス基板２１、即ち表面部４２を有する基板２１
（図４参照）を加熱炉内で加熱して結晶化処理を行うも
のである。具体的には、加熱炉内で基板２１全体を加熱
処理することによって、表面部４２におけるアモルファ
スシリコン部４１が溶融する。その後、基板２１を加熱
炉内から取り出して冷却することによって、溶融したア
モルファスシリコン部４１が、各単結晶シリコン薄膜１
２を種結晶として再結晶化し、溶融されたアモルファス
シリコン部４１は単結晶シリコンとして成長する。これ
によって、アモルファスシリコン部４１が全て単結晶化
し、図５に示すように、ガラス基板２１の表面全面に、
膜厚ｔの単結晶シリコン薄膜５１が形成される。ここ
で、この時の冷却速度は、溶融したアモルファスシリコ
ン部４１が、再びアモルファス化することなく結晶成長
する程度の冷却速度であれば特に限定するものではな
い。On the other hand, in the method of manufacturing a large-area single crystal silicon substrate according to the second embodiment, the glass substrate 21 after the etching treatment, that is, the substrate 21 having the surface portion 42.
(See FIG. 4) is heated in a heating furnace for crystallization treatment. Specifically, by heating the entire substrate 21 in the heating furnace, the amorphous silicon portion 41 on the surface portion 42 is melted. After that, the substrate 21 is taken out of the heating furnace and cooled, so that the melted amorphous silicon portion 41 is removed from each single crystal silicon thin film 1.
2 is recrystallized by using 2 as a seed crystal, and the melted amorphous silicon portion 41 grows as single crystal silicon. As a result, the amorphous silicon portion 41 is entirely made into a single crystal, and as shown in FIG.
A single crystal silicon thin film 51 having a film thickness t is formed. Here, the cooling rate at this time is not particularly limited as long as it is a cooling rate at which the melted amorphous silicon portion 41 is crystallized without becoming amorphous again.
【００３０】加熱処理としては、基板２１全体を加熱炉
内で加熱する方法以外に、表面部４２のみを加熱し、か
つ、各単結晶シリコン薄膜１２とアモルファスシリコン
部４１との境界部から各単結晶シリコン薄膜１２の中間
部に向かって、順次、溶融域を移動させながら加熱する
帯域溶融法（zone melting）を用いてもよい。As the heat treatment, in addition to the method of heating the entire substrate 21 in the heating furnace, only the surface portion 42 is heated, and each single crystal silicon thin film 12 and the amorphous silicon portion 41 are separated from the boundary portion. You may use the zone melting method (zone melting) which heats, moving a melting zone one by one toward the middle part of the crystalline silicon thin film 12.
【００３１】本実施の形態においても、前実施の形態と
同様の作用効果が得られることは言うまでもない。It is needless to say that the same effects as those of the previous embodiment can be obtained in this embodiment as well.
【００３２】以上、本発明の実施の形態は、上述した実
施の形態に限定されるものではなく、他にも種々のもの
が想定されることは言うまでもない。It is needless to say that the embodiments of the present invention are not limited to the above-mentioned embodiments but various other embodiments are possible.
【００３３】[0033]
【発明の効果】以上要するに本発明によれば、大面積の
ガラス基板であっても、その表面に単結晶のシリコン薄
膜を形成することができるという優れた効果を発揮す
る。In summary, according to the present invention, the excellent effect that a single crystal silicon thin film can be formed on the surface of a glass substrate having a large area is exhibited.
【図１】第１の実施の形態に係る大面積単結晶シリコン
基板の製造方法における単結晶シリコン薄膜の剥離工程
を説明するための斜視概略図である。図１（ａ）はシリ
コンウェハの斜視図、図１（ｂ）は単結晶シリコン薄膜
の平面図である。FIG. 1 is a perspective schematic view for explaining a step of peeling a single crystal silicon thin film in a method of manufacturing a large area single crystal silicon substrate according to a first embodiment. FIG. 1A is a perspective view of a silicon wafer, and FIG. 1B is a plan view of a single crystal silicon thin film.
【図２】第１の実施の形態に係る大面積単結晶シリコン
基板の製造方法における単結晶シリコン薄膜の貼り付け
工程を説明するための斜視概略図である。FIG. 2 is a schematic perspective view for explaining a step of attaching a single crystal silicon thin film in the method of manufacturing a large area single crystal silicon substrate according to the first embodiment.
【図３】第１の実施の形態に係る大面積単結晶シリコン
基板の製造方法におけるアモルファスシリコン膜の形成
工程を説明するための斜視概略図である。FIG. 3 is a schematic perspective view for explaining a step of forming an amorphous silicon film in the method of manufacturing a large area single crystal silicon substrate according to the first embodiment.
【図４】第１の実施の形態に係る大面積単結晶シリコン
基板の製造方法におけるエッチング工程を説明するため
の斜視概略図である。FIG. 4 is a schematic perspective view for explaining an etching step in the method of manufacturing a large-area single crystal silicon substrate according to the first embodiment.
【図５】第１の実施の形態に係る大面積単結晶シリコン
基板の斜視概略図である。FIG. 5 is a schematic perspective view of a large-area single crystal silicon substrate according to the first embodiment.
１１ 単結晶シリコンウェハ
１２ 単結晶シリコン薄膜
１２ａ 単結晶シリコン薄膜表面
２１ ガラス基板
３１ アモルファスシリコン膜
４１ アモルファスシリコン部（残りのアモルファスシ
リコン膜）
５１ 単結晶シリコン薄膜11 Single Crystal Silicon Wafer 12 Single Crystal Silicon Thin Film 12a Single Crystal Silicon Thin Film Surface 21 Glass Substrate 31 Amorphous Silicon Film 41 Amorphous Silicon Part (Remaining Amorphous Silicon Film) 51 Single Crystal Silicon Thin Film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 村山 隆彦 東京都江東区豊洲三丁目１番15号 石川島 播磨重工業株式会社東京エンジニアリング センター内 (72)発明者 石井 幹人 東京都江東区豊洲三丁目１番15号 石川島 播磨重工業株式会社東京エンジニアリング センター内 (72)発明者 西田 健一郎 東京都江東区豊洲三丁目１番15号 石川島 播磨重工業株式会社東京エンジニアリング センター内 (72)発明者 正木 みゆき 東京都江東区豊洲三丁目１番15号 石川島 播磨重工業株式会社東京エンジニアリング センター内 Ｆターム(参考） 5F052 AA02 AA17 BB07 DA02 DB04 EA11 FA00 GA02 GC03 GC05 HA03 JA01 KA01 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Takahiko Murayama 3-15 Toyosu, Koto-ku, Tokyo Ishikawajima Harima Heavy Industries Tokyo Engineering Co., Ltd. In the center (72) Inventor Mikito Ishii 3-15 Toyosu, Koto-ku, Tokyo Ishikawajima Harima Heavy Industries Tokyo Engineering Co., Ltd. In the center (72) Inventor Kenichiro Nishida 3-15 Toyosu, Koto-ku, Tokyo Ishikawajima Harima Heavy Industries Tokyo Engineering Co., Ltd. In the center (72) Inventor Miyuki Masaki 3-15 Toyosu, Koto-ku, Tokyo Ishikawajima Harima Heavy Industries Tokyo Engineering Co., Ltd. In the center F-term (reference) 5F052 AA02 AA17 BB07 DA02 DB04 EA11 FA00 GA02 GC03 GC05 HA03 JA01 KA01
Claims (4)
ン薄膜を剥離形成し、その単結晶シリコン薄膜を複数
枚、結晶方位を揃えてガラス基板表面に貼設し、その
後、ガラス基板表面にアモルファスシリコン膜を形成し
て各単結晶シリコン薄膜全体を覆い、その後、アモルフ
ァスシリコン膜の表面にエッチング処理を施して各単結
晶シリコン薄膜の表面を露出させ、その後、残りのアモ
ルファスシリコン膜を各単結晶シリコン薄膜の結晶方位
に倣って単結晶化する結晶化処理を施し、ガラス基板の
表面全面に単結晶シリコン薄膜を形成することを特徴と
する大面積単結晶シリコン基板の製造方法。1. A single crystal silicon thin film is formed by peeling from a single crystal silicon wafer, and a plurality of the single crystal silicon thin films are adhered to a glass substrate surface with their crystal orientations aligned, and then an amorphous silicon film is formed on the glass substrate surface. To cover the entire single crystal silicon thin film, and then the surface of the amorphous silicon film is subjected to an etching process to expose the surface of each single crystal silicon thin film, and then the remaining amorphous silicon film is replaced with each single crystal silicon thin film. The method for producing a large-area single crystal silicon substrate, which comprises subjecting a single crystal silicon thin film to the entire surface of a glass substrate by performing a crystallization process for single crystallization according to the crystal orientation of.
ン薄膜とアモルファスシリコン膜との界面へのレーザ照
射を順次繰り返して結晶化処理を施す請求項１記載の大
面積単結晶シリコン基板の製造方法。2. The method for producing a large area single crystal silicon substrate according to claim 1, wherein after the etching treatment, laser irradiation is sequentially repeated on the interface between each single crystal silicon thin film and the amorphous silicon film to perform the crystallization treatment.
を加熱炉内で加熱して結晶化処理を施す請求項１記載の
大面積単結晶シリコン基板の製造方法。3. The method for producing a large area single crystal silicon substrate according to claim 1, wherein after the etching treatment, the entire glass substrate is heated in a heating furnace to be crystallized.
の表面全面に平滑化処理を施す請求項１から３いずれか
に記載の大面積単結晶シリコン基板の製造方法。4. The method for producing a large-area single crystal silicon substrate according to claim 1, wherein after the crystallization treatment, a smoothing treatment is performed on the entire surface of the single crystal silicon thin film.
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| CN102668023A (en) * | 2010-05-14 | 2012-09-12 | 住友电气工业株式会社 | Semiconductor device, combined substrate, and methods for manufacturing them |
| WO2011142288A1 (en) * | 2010-05-14 | 2011-11-17 | 住友電気工業株式会社 | Semiconductor device, bonded substrate, and manufacturing methods therefor |
| WO2012053254A1 (en) * | 2010-10-18 | 2012-04-26 | 住友電気工業株式会社 | Method for manufacturing composite substrate having silicon carbide substrate |
| WO2012053252A1 (en) * | 2010-10-18 | 2012-04-26 | 住友電気工業株式会社 | Composite substrate having silicon carbide substrate |
| WO2012060430A1 (en) * | 2010-11-05 | 2012-05-10 | シャープ株式会社 | Semiconductor substrate, method for manufacturing semiconductor substrate, thin-film transistor, semiconductor circuit, liquid crystal display device, electroluminescent device, wireless communication device, and light-emitting device |
| US8981519B2 (en) | 2010-11-05 | 2015-03-17 | Sharp Kabushiki Kaisha | Semiconductor substrate, method of manufacturing semiconductor substrate, thin film transistor, semiconductor circuit, liquid crystal display apparatus, electroluminescence apparatus, wireless communication apparatus, and light emitting apparatus |
| CN103339710A (en) * | 2011-02-02 | 2013-10-02 | 信越化学工业株式会社 | Method for manufacturing SOI wafer |
| WO2012105367A1 (en) * | 2011-02-02 | 2012-08-09 | 信越化学工業株式会社 | Method for manufacturing soi wafer |
| JP2012160648A (en) * | 2011-02-02 | 2012-08-23 | Shin Etsu Chem Co Ltd | Method for manufacturing soi wafer |
| TWI570805B (en) * | 2011-02-02 | 2017-02-11 | 信越化學工業股份有限公司 | SOI wafer manufacturing method |
| US8994009B2 (en) | 2011-09-07 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| WO2014020906A1 (en) * | 2012-07-30 | 2014-02-06 | 住友化学株式会社 | Method for manufacturing composite substrate and method for manufacturing semiconductor crystal layer formation substrate |
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