JP2009044142A5 - - Google Patents
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- Publication number
- JP2009044142A5 JP2009044142A5 JP2008179919A JP2008179919A JP2009044142A5 JP 2009044142 A5 JP2009044142 A5 JP 2009044142A5 JP 2008179919 A JP2008179919 A JP 2008179919A JP 2008179919 A JP2008179919 A JP 2008179919A JP 2009044142 A5 JP2009044142 A5 JP 2009044142A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal semiconductor
- substrate
- semiconductor layer
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 119
- 239000013078 crystal Substances 0.000 claims 95
- 239000000758 substrate Substances 0.000 claims 55
- 238000004519 manufacturing process Methods 0.000 claims 17
- 230000001678 irradiating effect Effects 0.000 claims 10
- 238000000034 method Methods 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 5
- 238000001069 Raman spectroscopy Methods 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 150000001282 organosilanes Chemical class 0.000 claims 2
- 150000003376 silicon Chemical class 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008179919A JP5322520B2 (ja) | 2007-07-13 | 2008-07-10 | 半導体装置、電子機器、及び半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007184984 | 2007-07-13 | ||
| JP2007184984 | 2007-07-13 | ||
| JP2008179919A JP5322520B2 (ja) | 2007-07-13 | 2008-07-10 | 半導体装置、電子機器、及び半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009044142A JP2009044142A (ja) | 2009-02-26 |
| JP2009044142A5 true JP2009044142A5 (enExample) | 2011-06-23 |
| JP5322520B2 JP5322520B2 (ja) | 2013-10-23 |
Family
ID=40253484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008179919A Expired - Fee Related JP5322520B2 (ja) | 2007-07-13 | 2008-07-10 | 半導体装置、電子機器、及び半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7790563B2 (enExample) |
| JP (1) | JP5322520B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5580010B2 (ja) * | 2008-09-05 | 2014-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8048754B2 (en) * | 2008-09-29 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate and method for manufacturing single crystal semiconductor layer |
| US20100081251A1 (en) * | 2008-09-29 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate |
| JP5611571B2 (ja) * | 2008-11-27 | 2014-10-22 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法及び半導体装置の作製方法 |
| JP2011077504A (ja) * | 2009-09-02 | 2011-04-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP5755931B2 (ja) | 2010-04-28 | 2015-07-29 | 株式会社半導体エネルギー研究所 | 半導体膜の作製方法、電極の作製方法、２次電池の作製方法、および太陽電池の作製方法 |
| JP5672786B2 (ja) * | 2010-06-15 | 2015-02-18 | 株式会社デンソー | 炭化珪素半導体基板の製造方法およびその基板を用いた炭化珪素半導体装置 |
| US8735263B2 (en) | 2011-01-21 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| CN104483771B (zh) * | 2014-10-28 | 2018-02-06 | 上海中航光电子有限公司 | 一种tft阵列基板、显示面板及显示装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| US5624851A (en) * | 1993-03-12 | 1997-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized |
| JP3067949B2 (ja) * | 1994-06-15 | 2000-07-24 | シャープ株式会社 | 電子装置および液晶表示装置 |
| JP3572713B2 (ja) * | 1995-04-11 | 2004-10-06 | ソニー株式会社 | 半導体量子細線デバイスの製造方法 |
| TW297138B (enExample) * | 1995-05-31 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
| JP4103968B2 (ja) * | 1996-09-18 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置 |
| US6388652B1 (en) * | 1997-08-20 | 2002-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device |
| US6686623B2 (en) * | 1997-11-18 | 2004-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
| JPH11163363A (ja) | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2000012864A (ja) * | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US6271101B1 (en) * | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
| JP4476390B2 (ja) * | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4126912B2 (ja) * | 2001-06-22 | 2008-07-30 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法並びに電子機器 |
| JP2005026472A (ja) * | 2003-07-02 | 2005-01-27 | Sharp Corp | 半導体装置の製造方法 |
| US20050048706A1 (en) * | 2003-08-27 | 2005-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP4759919B2 (ja) * | 2004-01-16 | 2011-08-31 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
| JP4540359B2 (ja) * | 2004-02-10 | 2010-09-08 | シャープ株式会社 | 半導体装置およびその製造方法 |
| WO2005112129A1 (ja) * | 2004-05-13 | 2005-11-24 | Fujitsu Limited | 半導体装置およびその製造方法、半導体基板の製造方法 |
| JP4542492B2 (ja) * | 2005-10-07 | 2010-09-15 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法、電子機器、並びに半導体装置 |
-
2008
- 2008-07-08 US US12/216,548 patent/US7790563B2/en not_active Expired - Fee Related
- 2008-07-10 JP JP2008179919A patent/JP5322520B2/ja not_active Expired - Fee Related