JP2009111354A5 - - Google Patents
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- Publication number
- JP2009111354A5 JP2009111354A5 JP2008237942A JP2008237942A JP2009111354A5 JP 2009111354 A5 JP2009111354 A5 JP 2009111354A5 JP 2008237942 A JP2008237942 A JP 2008237942A JP 2008237942 A JP2008237942 A JP 2008237942A JP 2009111354 A5 JP2009111354 A5 JP 2009111354A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- substrate
- layer
- crystal semiconductor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 36
- 239000000758 substrate Substances 0.000 claims 33
- 239000013078 crystal Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 2
- 238000004140 cleaning Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008237942A JP5506172B2 (ja) | 2007-10-10 | 2008-09-17 | 半導体基板の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007264719 | 2007-10-10 | ||
| JP2007264719 | 2007-10-10 | ||
| JP2008237942A JP5506172B2 (ja) | 2007-10-10 | 2008-09-17 | 半導体基板の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009111354A JP2009111354A (ja) | 2009-05-21 |
| JP2009111354A5 true JP2009111354A5 (enExample) | 2011-10-27 |
| JP5506172B2 JP5506172B2 (ja) | 2014-05-28 |
Family
ID=40533362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008237942A Expired - Fee Related JP5506172B2 (ja) | 2007-10-10 | 2008-09-17 | 半導体基板の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7851332B2 (enExample) |
| JP (1) | JP5506172B2 (enExample) |
| KR (1) | KR101537925B1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009094488A (ja) * | 2007-09-21 | 2009-04-30 | Semiconductor Energy Lab Co Ltd | 半導体膜付き基板の作製方法 |
| TWI437696B (zh) | 2007-09-21 | 2014-05-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TWI493609B (zh) * | 2007-10-23 | 2015-07-21 | Semiconductor Energy Lab | 半導體基板、顯示面板及顯示裝置的製造方法 |
| JP5619474B2 (ja) * | 2009-05-26 | 2014-11-05 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| US8630326B2 (en) | 2009-10-13 | 2014-01-14 | Skorpios Technologies, Inc. | Method and system of heterogeneous substrate bonding for photonic integration |
| US9922967B2 (en) | 2010-12-08 | 2018-03-20 | Skorpios Technologies, Inc. | Multilevel template assisted wafer bonding |
| US8735191B2 (en) * | 2012-01-04 | 2014-05-27 | Skorpios Technologies, Inc. | Method and system for template assisted wafer bonding using pedestals |
| JP5680987B2 (ja) * | 2011-02-18 | 2015-03-04 | 株式会社アドバンテスト | 半導体装置、試験装置、および製造方法 |
| JP5417399B2 (ja) * | 2011-09-15 | 2014-02-12 | 信越化学工業株式会社 | 複合ウェーハの製造方法 |
| US9041147B2 (en) * | 2012-01-10 | 2015-05-26 | Sharp Kabushiki Kaisha | Semiconductor substrate, thin film transistor, semiconductor circuit, liquid crystal display apparatus, electroluminescent apparatus, semiconductor substrate manufacturing method, and semiconductor substrate manufacturing apparatus |
| JP6245791B2 (ja) * | 2012-03-27 | 2017-12-13 | 日亜化学工業株式会社 | 縦型窒化物半導体素子およびその製造方法 |
| US9209142B1 (en) | 2014-09-05 | 2015-12-08 | Skorpios Technologies, Inc. | Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal |
| KR102407529B1 (ko) * | 2015-10-30 | 2022-06-10 | 엘지디스플레이 주식회사 | 플렉서블 표시 장치와 그의 제조 방법 |
| JP6597865B2 (ja) * | 2018-10-16 | 2019-10-30 | 大日本印刷株式会社 | テンプレート基板の製造方法、および、ナノインプリント用テンプレートの製造方法 |
| KR102631767B1 (ko) * | 2019-08-22 | 2024-02-01 | 주식회사 효산 | 디스플레이 제조용 기판 및 이의 제조 방법 |
| TWI888525B (zh) * | 2020-04-08 | 2025-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
| CN113985219B (zh) * | 2021-09-24 | 2024-05-31 | 浙江华云电力工程设计咨询有限公司 | 一种开关柜局部放电和温度联合监测系统及监测方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| JP4103968B2 (ja) | 1996-09-18 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置 |
| US6388652B1 (en) | 1997-08-20 | 2002-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device |
| US6686623B2 (en) | 1997-11-18 | 2004-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
| JPH11163363A (ja) | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US6271101B1 (en) | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
| JP4476390B2 (ja) | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3525061B2 (ja) * | 1998-09-25 | 2004-05-10 | 株式会社東芝 | 半導体発光素子の製造方法 |
| JP4450126B2 (ja) * | 2000-01-21 | 2010-04-14 | 日新電機株式会社 | シリコン系結晶薄膜の形成方法 |
| JP4126912B2 (ja) * | 2001-06-22 | 2008-07-30 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法並びに電子機器 |
| JP4182323B2 (ja) | 2002-02-27 | 2008-11-19 | ソニー株式会社 | 複合基板、基板製造方法 |
| US6818529B2 (en) * | 2002-09-12 | 2004-11-16 | Applied Materials, Inc. | Apparatus and method for forming a silicon film across the surface of a glass substrate |
| TWI351566B (en) * | 2003-01-15 | 2011-11-01 | Semiconductor Energy Lab | Liquid crystal display device |
| JP2004246028A (ja) * | 2003-02-13 | 2004-09-02 | Seiko Epson Corp | デバイスの製造方法及びこれを用いて製造されたデバイス、複合基板の製造方法、電気光学装置、並びに電子機器 |
| US7105448B2 (en) * | 2003-02-28 | 2006-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for peeling off semiconductor element and method for manufacturing semiconductor device |
| JP4082242B2 (ja) * | 2003-03-06 | 2008-04-30 | ソニー株式会社 | 素子転写方法 |
| JP4407384B2 (ja) * | 2004-05-28 | 2010-02-03 | 株式会社Ｓｕｍｃｏ | Ｓｏｉ基板の製造方法 |
| JP4624131B2 (ja) * | 2005-02-22 | 2011-02-02 | 三洋電機株式会社 | 窒化物系半導体素子の製造方法 |
| JP5084169B2 (ja) * | 2005-04-28 | 2012-11-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7510950B2 (en) * | 2005-06-30 | 2009-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2009507363A (ja) * | 2005-07-27 | 2009-02-19 | シリコン・ジェネシス・コーポレーション | 制御された劈開プロセスを用いてプレート上の複数タイル部分を形成する方法および構造 |
| US8164257B2 (en) * | 2006-01-25 | 2012-04-24 | Samsung Mobile Display Co., Ltd. | Organic light emitting display and method of fabricating the same |
| US7713836B2 (en) * | 2006-09-29 | 2010-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming conductive layer and substrate having the same, and method for manufacturing semiconductor device |
| US8119204B2 (en) * | 2007-04-27 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Film formation method and method for manufacturing light-emitting device |
| KR100882932B1 (ko) * | 2007-06-11 | 2009-02-10 | 삼성전자주식회사 | 반도체 기판 및 그 제조 방법, 반도체 소자의 제조 방법 및이미지 센서의 제조 방법 |
| US20100015782A1 (en) * | 2008-07-18 | 2010-01-21 | Chen-Hua Yu | Wafer Dicing Methods |
-
2008
- 2008-09-17 JP JP2008237942A patent/JP5506172B2/ja not_active Expired - Fee Related
- 2008-09-25 US US12/237,606 patent/US7851332B2/en not_active Expired - Fee Related
- 2008-10-10 KR KR1020080099597A patent/KR101537925B1/ko not_active Expired - Fee Related