JP4624131B2 - 窒化物系半導体素子の製造方法 - Google Patents
窒化物系半導体素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 117
- 150000004767 nitrides Chemical class 0.000 title claims description 105
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims description 147
- 238000000034 method Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 30
- 230000004927 fusion Effects 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000011135 tin Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 238000005304 joining Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 claims 1
- 238000010791 quenching Methods 0.000 claims 1
- 230000000171 quenching effect Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 24
- 229910052594 sapphire Inorganic materials 0.000 description 22
- 239000010980 sapphire Substances 0.000 description 22
- 238000005253 cladding Methods 0.000 description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 18
- 238000000926 separation method Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- 239000010949 copper Substances 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 6
- 229910015363 Au—Sn Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- -1 nitride compound Chemical class 0.000 description 5
- 238000003776 cleavage reaction Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000007017 scission Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004337 Ti-Ni Inorganic materials 0.000 description 1
- 229910011209 Ti—Ni Inorganic materials 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
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Description
図2は、第1の実施の形態に係る窒化物系半導体レーザの製造方法の概略を説明するための図である。第1の実施の形態では、図2(a)に示すように、支持基板113の一方の主面上に、支持基板113より熱膨張係数の大きい材料からなる調整層114を形成する。そして、GaN基板101上の窒化物系半導体素子層105と支持基板113とを、融着層112を介して接合する。窒化物系半導体素子層105には、所定の間隔で開口するマスク層103が含まれる。このように、支持基板113より熱膨張係数が大きい材料からなる調整層114を形成することにより、支持基板113は窒化物系半導体素子層105側に凸状に湾曲する。一方、GaN基板101は、その表面がほぼ平坦か、窒化物系半導体素子層105側に凹状に湾曲する。そして、図2(b)に示すように、融着層112を介して、支持基板113と、窒化物系半導体素子層105とを接合する。
図8は、第2の実施の形態に係る窒化物系半導体発光ダイオードの製造方法の概略を説明するための図である。第2の実施の形態では、図8(a)に示すように、支持基板213の一方の主面上に、支持基板213より熱膨張係数の大きい材料からなる調整層214を形成する。そして、サファイア基板201上の窒化物系半導体素子層205と支持基板213とを、融着層212を介して接合する。窒化物系半導体素子層205には、所定の間隔で開口するマスク層203が含まれる。このように、支持基板213より熱膨張係数が大きい材料からなる調整層214を形成することにより、支持基板213は窒化物系半導体素子層205側に凸状に湾曲する。一方、サファイア基板201は、その表面が窒化物系半導体素子層205側に凸状に湾曲する。そして、図8(b)に示すように、融着層212を介して、支持基板213と、窒化物系半導体素子層205とを接合する。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
3、103、203…マスク層
5、105、205…窒化物系半導体素子層
12、112、212…融着層
13、113、213…支持基板
14、114、214…調整層
102、202…バッファ層
104、204…下地層
105、205…n型コンタクト層
106、206…n型クラッド層
107…発光層
108…p型クラッド層
109…p型コンタクト層
110…電流ブロック層
111…p側電極
115…n側電極
207…活性層
Claims (8)
- 第1の基板上に、少なくとも1層以上の窒化物系半導体素子層を形成する工程と、
第2の基板の一方の主面上に、該第2の基板より熱膨張係数の大きい材料からなる調整層を形成する工程と、
前記第2の基板の他方の主面上に、融着層を形成する工程と、
前記窒化物系半導体素子層上に、前記調整層及び前記融着層が形成された前記第2の基板の前記他方の主面を前記融着層を介して接合する工程と、
接合された前記窒化物系半導体素子層及び前記第2の基板から前記第1の基板を分離する工程とを含み、
前記調整層は、前記融着層と同種の金属からなり、前記調整層の膜厚は、前記融着層の膜厚より大きいことを特徴とする窒化物系半導体素子の製造方法。 - 前記接合する工程は、前記第1の基板と前記第2の基板とを熱圧着することにより行うことを特徴とする請求項1に記載の窒化物系半導体素子の製造方法。
- 前記第2の基板は、金属と該金属の酸化物との複合体を主成分とし、
前記調整層は、金、スズ、ニッケル、チタン、あるいはそれらの合金からなることを特徴とする請求項1または2に記載の窒化物系半導体素子の製造方法。 - 前記窒化物系半導体素子層は、所定の間隔で開口するマスク層を含むことを特徴とする請求項1〜3のいずれか1項に記載の窒化物系半導体素子の製造方法。
- 前記マスク層は、複数の熱膨張係数の異なる膜を積層して形成されることを特徴とする請求項4に記載の窒化物系半導体素子の製造方法。
- 前記窒化物系半導体素子層の一端には、第1の電極が設けられ、前記窒化物系半導体素子層の他端には、第2の電極が設けられることを特徴とする請求項1〜5のいずれか1項に記載の窒化物系半導体素子の製造方法。
- 前記分離する工程は、前記第1の基板を刷動させることにより行うことを特徴とする請求項1〜6のいずれか1項に記載の窒化物系半導体素子の製造方法。
- 前記分離する工程は、前記接合する工程の後、前記マスク層を急冷することを特徴とする請求項5に記載の窒化物系半導体素子の製造方法。
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JP2005045886A JP4624131B2 (ja) | 2005-02-22 | 2005-02-22 | 窒化物系半導体素子の製造方法 |
US11/356,964 US7488667B2 (en) | 2005-02-22 | 2006-02-21 | Method for manufacturing nitride-base semiconductor element and nitride-base semiconductor element |
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JP2005045886A JP4624131B2 (ja) | 2005-02-22 | 2005-02-22 | 窒化物系半導体素子の製造方法 |
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JP2006237074A JP2006237074A (ja) | 2006-09-07 |
JP4624131B2 true JP4624131B2 (ja) | 2011-02-02 |
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Families Citing this family (17)
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JP5003033B2 (ja) * | 2006-06-30 | 2012-08-15 | 住友電気工業株式会社 | GaN薄膜貼り合わせ基板およびその製造方法、ならびにGaN系半導体デバイスおよびその製造方法 |
WO2008047928A1 (en) * | 2006-10-19 | 2008-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR100886110B1 (ko) * | 2006-12-08 | 2009-02-27 | 고려대학교 산학협력단 | 반도체 발광소자용 지지기판 및 이를 이용한 수직구조의 반도체 발광소자 제조 방법 |
JP5506172B2 (ja) * | 2007-10-10 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法 |
WO2009061353A2 (en) * | 2007-11-02 | 2009-05-14 | President And Fellows Of Harvard College | Production of free-standing solid state layers by thermal processing of substrates with a polymer |
JP5264018B2 (ja) * | 2008-04-11 | 2013-08-14 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法 |
JP2009277944A (ja) * | 2008-05-15 | 2009-11-26 | Toyoda Gosei Co Ltd | 接合体の製造方法及び発光装置の製造方法 |
US8314011B2 (en) | 2008-05-30 | 2012-11-20 | Alta Devices, Inc. | Epitaxial lift off stack having a non-uniform handle and methods thereof |
KR101064068B1 (ko) * | 2009-02-25 | 2011-09-08 | 엘지이노텍 주식회사 | 발광소자의 제조방법 |
KR101047652B1 (ko) | 2009-12-18 | 2011-07-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
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JP5551131B2 (ja) * | 2011-09-14 | 2014-07-16 | 株式会社東芝 | 窒化物半導体積層構造体の製造方法 |
CN103515509B (zh) * | 2012-06-26 | 2016-08-17 | 比亚迪股份有限公司 | 一种大功率led底座的制备方法和大功率led底座 |
KR20140142040A (ko) * | 2013-06-03 | 2014-12-11 | 서울바이오시스 주식회사 | 기판 재생 방법 및 재생 기판 |
JP6812333B2 (ja) * | 2017-12-08 | 2021-01-13 | エア・ウォーター株式会社 | 化合物半導体基板 |
JP2020077710A (ja) * | 2018-11-06 | 2020-05-21 | 信越半導体株式会社 | 発光素子用半導体基板の製造方法及び発光素子の製造方法 |
JP7468182B2 (ja) | 2020-06-22 | 2024-04-16 | 日本電気硝子株式会社 | 膜付き基板、サブマウント、及び光学デバイス |
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JP2002536843A (ja) * | 1999-02-10 | 2002-10-29 | コミツサリア タ レネルジー アトミーク | 内部応力制御のなされた多層構造体、およびその製造方法 |
JP2002144727A (ja) * | 2000-11-13 | 2002-05-22 | Fuji Photo Film Co Ltd | 感熱記録材料 |
JP2004056109A (ja) * | 2002-05-27 | 2004-02-19 | Nichia Chem Ind Ltd | 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置 |
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