JP5551131B2 - 窒化物半導体積層構造体の製造方法 - Google Patents
窒化物半導体積層構造体の製造方法 Download PDFInfo
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- JP5551131B2 JP5551131B2 JP2011200511A JP2011200511A JP5551131B2 JP 5551131 B2 JP5551131 B2 JP 5551131B2 JP 2011200511 A JP2011200511 A JP 2011200511A JP 2011200511 A JP2011200511 A JP 2011200511A JP 5551131 B2 JP5551131 B2 JP 5551131B2
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- 239000004065 semiconductor Substances 0.000 title claims description 139
- 150000004767 nitrides Chemical class 0.000 title claims description 134
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 112
- 230000001681 protective effect Effects 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 54
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 46
- 229910002601 GaN Inorganic materials 0.000 description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 239000010703 silicon Substances 0.000 description 31
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000002245 particle Substances 0.000 description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- 238000005253 cladding Methods 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- -1 α1≈5.3E-6 / K) Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Description
(付記1) 前記基板は、シリコン、サファイア、炭化珪素および酸化亜鉛基板から選択された材料からなる請求項1に記載の窒化物半導体積層構造体の製造方法。
11 基板
11a 第1の面
11b 第2の面
12 第1窒化物半導体層
13 第2窒化物半導体層
21 GaN層
22 N型GaNクラッド層
23 MQW層
24 P型GaNクラッド層
25 P型GaNコンタクト層
31 第1保護膜
32、36 堆積物
33、37 パーティクル
34、71 第2保護膜
35 第3保護膜
41 残渣
42 結晶欠陥
43 白濁
50、60 窒化物半導体発光素子
51、61 第1電極
52、62 第2電極
Claims (5)
- 第1および第2の面と第1熱膨張係数を有する基板の前記第2の面に、第1保護膜を形成する工程と、
前記第1保護膜が形成された前記基板の前記第1の面に、前記第1熱膨張係数と異なる第2熱膨張係数を有する第1窒化物半導体層を形成する工程と、
前記第1窒化物半導体層に、前記第1保護膜と同種の第2保護膜を形成する工程と、
前記第2保護膜を第3保護膜で被覆して、薬液を用いて前記第1保護膜を除去し、前記基板の前記第2の面を露出させる工程と、
露出した前記基板の第2の面に、前記第2熱膨張係数に略等しい第3熱膨張係数を有する第2窒化物半導体層を形成する工程と、
前記第2保護膜を除去し、前記第1窒化物半導体層を露出させる工程と、
を具備することを特徴とする窒化物半導体積層構造体の製造方法。 - 第1および第2の面と第1熱膨張係数を有する基板の前記第2の面に、第1保護膜を形成する工程と、
前記第1保護膜が形成された前記基板の前記第1の面に、前記第1熱膨張係数と異なる第2熱膨張係数を有する第1窒化物半導体層を形成する工程と、
前記第1窒化物半導体層に、前記第1保護膜と異種の第2保護膜を形成する工程と、
前記第2保護膜に対して選択性を有する薬液を用いて前記第1保護膜を除去し、前記基板の前記第2の面を露出させる工程と、
露出した前記基板の第2の面に、前記第2熱膨張係数に略等しい第3熱膨張係数を有する第2窒化物半導体層を形成する工程と、
前記第2保護膜を除去し、前記第1窒化物半導体層を露出させる工程と、
を具備することを特徴とする窒化物半導体積層構造体の製造方法。
- 前記第1窒化物半導体層を形成する工程において、前記第1保護膜に堆積物が被着し、前記第1保護膜を除去する工程において、前記堆積物が同時に除去されることを特徴とする請求項1または2に記載の窒化物半導体積層構造体の製造方法。
- 前記第2窒化物半導体層を形成する工程において、前記第2保護膜に堆積物が被着し、前記第2保護膜を除去する工程において、前記堆積物が同時に除去されることを特徴とする請求項1または2に記載の窒化物半導体積層構造体の製造方法。
- 前記第1保護膜および前記第2保護膜の除去は、等方性エッチングによりおこなうことを特徴とする請求項1または2に記載の窒化物半導体積層構造体の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011200511A JP5551131B2 (ja) | 2011-09-14 | 2011-09-14 | 窒化物半導体積層構造体の製造方法 |
TW101107491A TWI478393B (zh) | 2011-09-14 | 2012-03-06 | 製造堆疊氮化合物半導體結構之方法及製造氮化合物半導體發光裝置之方法 |
US13/416,797 US8980664B2 (en) | 2011-09-14 | 2012-03-09 | Method for fabricating stacked nitride-compound semiconductor structure and method for fabricating nitride-compound semiconductor light emitting device |
KR1020120026589A KR101370742B1 (ko) | 2011-09-14 | 2012-03-15 | 질화물 반도체 적층 구조체의 제조 방법 및 질화물 반도체 발광 소자의 제조 방법 |
CN201210068462.8A CN103000492B (zh) | 2011-09-14 | 2012-03-15 | 制造堆叠的氮化物半导体结构的方法以及制造氮化物半导体发光装置的方法 |
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JP2011200511A JP5551131B2 (ja) | 2011-09-14 | 2011-09-14 | 窒化物半導体積層構造体の製造方法 |
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JP2013062409A JP2013062409A (ja) | 2013-04-04 |
JP5551131B2 true JP5551131B2 (ja) | 2014-07-16 |
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US (1) | US8980664B2 (ja) |
JP (1) | JP5551131B2 (ja) |
KR (1) | KR101370742B1 (ja) |
CN (1) | CN103000492B (ja) |
TW (1) | TWI478393B (ja) |
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JP5941523B2 (ja) * | 2014-12-04 | 2016-06-29 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体エピタキシャル基板およびその製造方法 |
JP6704386B2 (ja) * | 2015-02-27 | 2020-06-03 | 住友化学株式会社 | 窒化物半導体テンプレート及びその製造方法、並びにエピタキシャルウエハ |
JP6978206B2 (ja) * | 2017-01-27 | 2021-12-08 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
WO2018175751A1 (en) * | 2017-03-24 | 2018-09-27 | Wisconsin Alumni Research Foundation | Group iii-v nitride-based light emitting devices having multilayered p-type contacts |
KR102001791B1 (ko) * | 2018-12-26 | 2019-07-18 | 한양대학교 산학협력단 | 이온 주입을 이용한 질화갈륨 기판 제조 방법 |
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JP4969607B2 (ja) * | 2009-05-25 | 2012-07-04 | シャープ株式会社 | 半導体積層構造体の製造方法 |
JP5146432B2 (ja) * | 2009-09-29 | 2013-02-20 | 豊田合成株式会社 | Iii族窒化物系化合物半導体のエピタキシャル成長方法及びiii族窒化物系化合物半導体素子の製造方法 |
WO2011071717A2 (en) * | 2009-12-11 | 2011-06-16 | National Semiconductor Corporation | Backside stress compensation for gallium nitride or other nitride-based semiconductor devices |
KR101630152B1 (ko) * | 2010-02-24 | 2016-06-14 | 엘지디스플레이 주식회사 | 하이브리드 발광다이오드 칩과 이를 포함하는 발광다이오드 소자 및 이의 제조방법 |
KR20110120019A (ko) * | 2010-04-28 | 2011-11-03 | 삼성전자주식회사 | 반도체 소자 |
JP2012059790A (ja) * | 2010-09-06 | 2012-03-22 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP2012059969A (ja) * | 2010-09-09 | 2012-03-22 | Toshiba Corp | 半導体発光素子 |
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JP2013062409A (ja) | 2013-04-04 |
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US20130065341A1 (en) | 2013-03-14 |
CN103000492A (zh) | 2013-03-27 |
KR20130029324A (ko) | 2013-03-22 |
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TW201312796A (zh) | 2013-03-16 |
US8980664B2 (en) | 2015-03-17 |
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