JP2005311199A5 - - Google Patents
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- Publication number
- JP2005311199A5 JP2005311199A5 JP2004128803A JP2004128803A JP2005311199A5 JP 2005311199 A5 JP2005311199 A5 JP 2005311199A5 JP 2004128803 A JP2004128803 A JP 2004128803A JP 2004128803 A JP2004128803 A JP 2004128803A JP 2005311199 A5 JP2005311199 A5 JP 2005311199A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- manufacturing
- composite
- gettering layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims 65
- 238000004519 manufacturing process Methods 0.000 claims 21
- 239000002131 composite material Substances 0.000 claims 18
- 238000005247 gettering Methods 0.000 claims 15
- 238000000034 method Methods 0.000 claims 15
- 238000010438 heat treatment Methods 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004128803A JP2005311199A (ja) | 2004-04-23 | 2004-04-23 | 基板の製造方法 |
| US11/110,666 US20050239267A1 (en) | 2004-04-23 | 2005-04-21 | Substrate manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004128803A JP2005311199A (ja) | 2004-04-23 | 2004-04-23 | 基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005311199A JP2005311199A (ja) | 2005-11-04 |
| JP2005311199A5 true JP2005311199A5 (enExample) | 2007-01-18 |
Family
ID=35137022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004128803A Withdrawn JP2005311199A (ja) | 2004-04-23 | 2004-04-23 | 基板の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20050239267A1 (enExample) |
| JP (1) | JP2005311199A (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9177828B2 (en) * | 2011-02-10 | 2015-11-03 | Micron Technology, Inc. | External gettering method and device |
| CN100437899C (zh) * | 2006-01-27 | 2008-11-26 | 台湾积体电路制造股份有限公司 | 减少制程环境内的杂质的装置及其方法 |
| KR100770269B1 (ko) * | 2006-05-18 | 2007-10-25 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조방법 |
| KR100770268B1 (ko) * | 2006-05-18 | 2007-10-25 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조방법 |
| JP4952069B2 (ja) * | 2006-06-02 | 2012-06-13 | 大日本印刷株式会社 | 加速度センサの製造方法 |
| JP2008060220A (ja) * | 2006-08-30 | 2008-03-13 | Disco Abrasive Syst Ltd | ゲッタリング層形成装置 |
| EP2078307B1 (en) * | 2006-11-02 | 2015-03-25 | Imec | Removal of impurities from semiconductor device layers |
| US7795111B2 (en) * | 2007-06-27 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate and manufacturing method of semiconductor device |
| FR2933684B1 (fr) * | 2008-07-09 | 2011-05-06 | Commissariat Energie Atomique | Procede de purification d'un substrat en silicium cristallin et procede d'elaboration d'une cellule photovoltaique |
| TWI419203B (zh) * | 2008-10-16 | 2013-12-11 | Sumco Corp | 具吸附槽之固態攝影元件用磊晶基板、半導體裝置、背照式固態攝影元件及其製造方法 |
| DE102009051009A1 (de) * | 2009-10-28 | 2011-05-05 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe aus einkristallinem Silizium |
| JP2012116741A (ja) * | 2010-11-12 | 2012-06-21 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物複合基板 |
| US8846500B2 (en) * | 2010-12-13 | 2014-09-30 | Semiconductor Components Industries, Llc | Method of forming a gettering structure having reduced warpage and gettering a semiconductor wafer therewith |
| KR20130069935A (ko) * | 2011-12-19 | 2013-06-27 | 주식회사 엘지실트론 | 웨이퍼 제조 방법 |
| JP2015032690A (ja) * | 2013-08-02 | 2015-02-16 | 株式会社ディスコ | 積層ウェーハの加工方法 |
| WO2019052194A1 (zh) * | 2017-09-13 | 2019-03-21 | 厦门三安光电有限公司 | 一种半导体元件的固晶方法及半导体元件 |
| US11232974B2 (en) * | 2018-11-30 | 2022-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication method of metal-free SOI wafer |
| JP7581098B2 (ja) * | 2021-03-19 | 2024-11-12 | キオクシア株式会社 | 半導体装置の製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4412255A (en) * | 1981-02-23 | 1983-10-25 | Optical Coating Laboratory, Inc. | Transparent electromagnetic shield and method of manufacturing |
| US4910090A (en) * | 1987-10-21 | 1990-03-20 | Southwall Technologies, Inc. | EMI/RFI shield for visual display terminals |
| EP0322720A3 (en) * | 1987-12-25 | 1990-01-17 | Asahi Glass Company Ltd. | Electromagnetic wave shielding transparent body |
| EP1043768B1 (en) * | 1992-01-30 | 2004-09-08 | Canon Kabushiki Kaisha | Process for producing semiconductor substrates |
| JP2908150B2 (ja) * | 1992-11-27 | 1999-06-21 | 日本電気株式会社 | Ｓｏｉ基板構造及びその製造方法 |
| JP2806277B2 (ja) * | 1994-10-13 | 1998-09-30 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| US5827602A (en) * | 1995-06-30 | 1998-10-27 | Covalent Associates Incorporated | Hydrophobic ionic liquids |
| JPH115064A (ja) * | 1997-06-16 | 1999-01-12 | Canon Inc | 試料の分離装置及びその方法並びに基板の製造方法 |
| US5897362A (en) * | 1998-04-17 | 1999-04-27 | Lucent Technologies Inc. | Bonding silicon wafers |
| US6376335B1 (en) * | 2000-02-17 | 2002-04-23 | Memc Electronic Materials, Inc. | Semiconductor wafer manufacturing process |
| US6353220B1 (en) * | 2000-02-01 | 2002-03-05 | Raytheon Company | Shielding of light transmitter/receiver against high-power radio-frequency radiation |
| US6376336B1 (en) * | 2001-02-01 | 2002-04-23 | Advanced Micro Devices, Inc. | Frontside SOI gettering with phosphorus doping |
-
2004
- 2004-04-23 JP JP2004128803A patent/JP2005311199A/ja not_active Withdrawn
-
2005
- 2005-04-21 US US11/110,666 patent/US20050239267A1/en not_active Abandoned