JP2014103329A5 - - Google Patents

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Publication number
JP2014103329A5
JP2014103329A5 JP2012255719A JP2012255719A JP2014103329A5 JP 2014103329 A5 JP2014103329 A5 JP 2014103329A5 JP 2012255719 A JP2012255719 A JP 2012255719A JP 2012255719 A JP2012255719 A JP 2012255719A JP 2014103329 A5 JP2014103329 A5 JP 2014103329A5
Authority
JP
Japan
Prior art keywords
oxide film
wafer
ion
bond wafer
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012255719A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014103329A (ja
JP5821828B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2012255719A external-priority patent/JP5821828B2/ja
Priority to JP2012255719A priority Critical patent/JP5821828B2/ja
Priority to CN201380047666.6A priority patent/CN104620384B/zh
Priority to KR1020157005866A priority patent/KR101910100B1/ko
Priority to SG11201501873QA priority patent/SG11201501873QA/en
Priority to PCT/JP2013/006072 priority patent/WO2014080563A1/ja
Priority to US14/427,151 priority patent/US9378999B2/en
Priority to EP13856571.8A priority patent/EP2924736B1/en
Publication of JP2014103329A publication Critical patent/JP2014103329A/ja
Publication of JP2014103329A5 publication Critical patent/JP2014103329A5/ja
Publication of JP5821828B2 publication Critical patent/JP5821828B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012255719A 2012-11-21 2012-11-21 Ｓｏｉウェーハの製造方法 Active JP5821828B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012255719A JP5821828B2 (ja) 2012-11-21 2012-11-21 Ｓｏｉウェーハの製造方法
PCT/JP2013/006072 WO2014080563A1 (ja) 2012-11-21 2013-10-11 Ｓｏｉウェーハの製造方法
KR1020157005866A KR101910100B1 (ko) 2012-11-21 2013-10-11 Soi 웨이퍼의 제조방법
SG11201501873QA SG11201501873QA (en) 2012-11-21 2013-10-11 Method for manufacturing soi wafer
CN201380047666.6A CN104620384B (zh) 2012-11-21 2013-10-11 Soi晶圆的制造方法
US14/427,151 US9378999B2 (en) 2012-11-21 2013-10-11 Method for manufacturing SOI wafer
EP13856571.8A EP2924736B1 (en) 2012-11-21 2013-10-11 Method for manufacturing soi wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012255719A JP5821828B2 (ja) 2012-11-21 2012-11-21 Ｓｏｉウェーハの製造方法

Publications (3)

Publication Number Publication Date
JP2014103329A JP2014103329A (ja) 2014-06-05
JP2014103329A5 true JP2014103329A5 (enExample) 2015-04-30
JP5821828B2 JP5821828B2 (ja) 2015-11-24

Family

ID=50775761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012255719A Active JP5821828B2 (ja) 2012-11-21 2012-11-21 Ｓｏｉウェーハの製造方法

Country Status (7)

Country Link
US (1) US9378999B2 (enExample)
EP (1) EP2924736B1 (enExample)
JP (1) JP5821828B2 (enExample)
KR (1) KR101910100B1 (enExample)
CN (1) CN104620384B (enExample)
SG (1) SG11201501873QA (enExample)
WO (1) WO2014080563A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6353814B2 (ja) * 2015-06-09 2018-07-04 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
JP6556511B2 (ja) * 2015-06-17 2019-08-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN110085549B (zh) * 2018-01-26 2021-06-04 沈阳硅基科技有限公司 一种双面注入得到soi的方法
CN110544668B (zh) * 2018-05-28 2022-03-25 沈阳硅基科技有限公司 一种通过贴膜改变soi边缘stir的方法
CN109360805A (zh) * 2018-09-28 2019-02-19 沈阳硅基科技有限公司 一种图形soi硅片的制备方法
CN115188703B (zh) * 2022-05-16 2025-09-19 绍兴中芯集成电路制造股份有限公司 一种soi晶圆及制造方法
FR3146019A1 (fr) * 2023-02-16 2024-08-23 Soitec Procédé de formation d’une zone de fragisilation dans un substrat semi-conducteur

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0355822A (ja) 1989-07-25 1991-03-11 Shin Etsu Handotai Co Ltd 半導体素子形成用基板の製造方法
JPH0680624B2 (ja) 1990-02-28 1994-10-12 信越半導体株式会社 接合ウエーハの製造方法
JP3422225B2 (ja) 1997-07-08 2003-06-30 三菱住友シリコン株式会社 貼り合わせ半導体基板及びその製造方法
JP3500063B2 (ja) * 1998-04-23 2004-02-23 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
FR2811807B1 (fr) 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
US20070069335A1 (en) * 2003-09-08 2007-03-29 Akihiko Endo Bonded wafer and its manufacturing method
EP1855309A4 (en) * 2005-02-28 2010-11-17 Shinetsu Handotai Kk METHOD FOR MANUFACTURING STICKED GALETTE AND STICKED GALETTE
JP4398934B2 (ja) 2005-02-28 2010-01-13 信越半導体株式会社 Ｓｏｉウエーハの製造方法
US7902039B2 (en) 2006-11-30 2011-03-08 Sumco Corporation Method for manufacturing silicon wafer
JP5233111B2 (ja) 2006-11-30 2013-07-10 株式会社Ｓｕｍｃｏ 貼り合わせｓｏｉウェーハの製造方法
JP2011187502A (ja) 2010-03-04 2011-09-22 Seiko Epson Corp 半導体装置の製造方法
CN102986020A (zh) * 2010-06-30 2013-03-20 康宁股份有限公司 对绝缘体基材上的硅进行精整的方法

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