JP6556511B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6556511B2 JP6556511B2 JP2015121692A JP2015121692A JP6556511B2 JP 6556511 B2 JP6556511 B2 JP 6556511B2 JP 2015121692 A JP2015121692 A JP 2015121692A JP 2015121692 A JP2015121692 A JP 2015121692A JP 6556511 B2 JP6556511 B2 JP 6556511B2
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- 239000004065 semiconductor Substances 0.000 title claims description 123
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 239000000758 substrate Substances 0.000 claims description 84
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 44
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 44
- 238000005253 cladding Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 34
- 230000003287 optical effect Effects 0.000 claims description 32
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 101
- 239000011229 interlayer Substances 0.000 description 54
- 229910052751 metal Inorganic materials 0.000 description 33
- 239000002184 metal Substances 0.000 description 33
- 230000004888 barrier function Effects 0.000 description 24
- 239000004020 conductor Substances 0.000 description 19
- 239000010936 titanium Substances 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 10
- 230000002950 deficient Effects 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 229910003697 SiBN Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1223—Basic optical elements, e.g. light-guiding paths high refractive index type, i.e. high-contrast waveguides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction in an optical waveguide structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Description
近年、シリコンを材料とした光信号用の伝送線路を作製し、この光信号用の伝送線路により構成した光回路をプラットフォームとして、種々の光デバイスと電子デバイスとを集積することで光通信用モジュールを実現する技術、いわゆるシリコンフォトニクス技術の開発が積極的に行われている。
本実施の形態1による半導体装置の構造を、図1を用いて説明する。図1は、本実施の形態1による半導体装置の要部断面図である。
従来のSOIウェハでは、SOIウェハのそりを防止するために、半導体基板SLの第1主面とは反対側の第2主面(裏面とも言う。)上に絶縁膜を形成する必要がある。しかし、その裏面に絶縁膜を形成したSOIウェハでは、その裏面に絶縁膜を形成しないSOIウェハと比べると、静電チャックの吸着残留力がさらに大きくなる。SOIウェハの裏面に絶縁膜を形成しなければ、吸着残留力を減少させることはできるが、第1絶縁膜CLの圧縮応力により、SOIウェハのそりが発生して、SOIウェハの静電チャック上での移動または搬送不良などの不具合が生じることがある。
本実施の形態1による半導体装置の製造方法を、図3〜図9を用いて工程順に説明する。図3〜図9は、本実施の形態1による製造工程中の半導体装置の要部断面図である。
本実施の形態2と前述した実施の形態1との相違点は、第2絶縁膜TSを設ける位置である。以下、相違点を中心に説明する。
本実施の形態1による半導体装置の構造を、図12を用いて説明する。図12は、本実施の形態2による半導体装置の要部断面図である。
前述の実施の形態1による半導体装置では、第2絶縁膜TSは、第1層間絶縁膜ID1と第2層間絶縁膜ID2との間に設けたが、本実施の形態2による半導体装置では、第1層間絶縁膜ID1の下に形成されている。
本実施の形態2による半導体装置の製造方法を、図13〜図18を用いて工程順に説明する。図13〜図18は、本実施の形態2による製造工程中の半導体装置の要部断面図である。
BMb バリアメタル
CL 第1絶縁膜(BOX層、下層クラッド層、第1クラッド層)
CF 第3絶縁膜
CT1 第1接続孔(コンタクト・ホール)
CT2 第2接続孔(ビア・ホール)
GE ゲルマニウム層
ID1 第1層間絶縁膜(上層クラッド層、第2クラッド層)
ID1a 下層絶縁膜
ID1b 上層絶縁膜
ID2 第2層間絶縁膜
M1 第1層目の配線
M2 第2層目の配線
ML 金属膜
NS N型層
OTL 導波路(光導波路、伝送線路、光信号線)
PD 受光器
PL1 第1プラグ
PL2 第2プラグ(埋め込み電極、埋め込みコンタクト)
PS P型層
RCL 第1裏面絶縁膜
RP レジストパターン
RTS 第2裏面絶縁膜
SL 半導体層(SOI層)
SUB 半導体基板
TC 保護膜
TS 第2絶縁膜
Claims (9)
- (a)シリコンからなる基板と、前記基板の第1主面上に形成され、シリコンに対して圧縮応力を発生させる第1クラッド層と、前記第1クラッド層上に形成されたシリコン層と、前記基板の前記第1主面と反対側の第2主面上に形成され、シリコンに対して圧縮応力を発生させる裏面クラッド層と、を有するSOI基板を準備する工程、
(b)前記シリコン層を加工して、前記シリコン層からなる光導波路を形成する工程、
(c)前記光導波路を覆うように、前記第1クラッド層上に、前記第1クラッド層の厚さよりも薄い第2クラッド層を形成する工程、
(d)前記第2クラッド層上に、シリコンに対して引張応力を発生させる絶縁膜を形成する工程、
(e)前記(d)工程の後、前記裏面クラッド層を除去する工程、
(f)前記光導波路の上方に位置する前記絶縁膜を除去する工程、
を含み、
前記(f)工程において、前記光導波路と前記絶縁膜との距離が前記第1クラッド層の厚さ以上となるように、前記絶縁膜を除去する、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記絶縁膜は、LPCVD法により形成される窒化シリコン膜、炭素を含有した窒化シリコン膜、ホウ素を含有した窒化シリコン膜、または炭素およびホウ素を含有した窒化シリコン膜である、半導体装置の製造方法。 - 請求項2記載の半導体装置の製造方法において、
前記絶縁膜の水素含有量は、1%以下である、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記絶縁膜の厚さは、100〜200nmである、半導体装置の製造方法。 - (a)シリコンからなる基板と、前記基板の第1主面上に形成され、シリコンに対して圧縮応力を発生させる第1クラッド層と、前記第1クラッド層上に形成されたシリコン層と、前記基板の前記第1主面と反対側の第2主面上に形成され、シリコンに対して圧縮応力を発生させる裏面クラッド層と、を有するSOI基板を準備する工程、
(b)前記シリコン層を加工して、前記シリコン層からなる光導波路を形成する工程、
(c)前記光導波路を覆うように、前記第1クラッド層上に第1絶縁膜を形成する工程、
(d)前記第1絶縁膜上に、シリコンに対して引張応力を発生させる第2絶縁膜を形成する工程、
(e)前記(d)工程の後に、前記裏面クラッド層を除去する工程、
(f)前記光導波路の上方に位置する前記第2絶縁膜を除去する工程、
(g)露出した前記第1絶縁膜上、および前記第2絶縁膜上に第2クラッド層を形成する工程、
を含み、
前記(f)工程において、前記光導波路と前記第2絶縁膜との距離が前記第1クラッド層の厚さ以上となるように、前記第2絶縁膜を除去する、半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法において、
前記第2絶縁膜は、LPCVD法により形成される窒化シリコン膜、炭素を含有した窒化シリコン膜、ホウ素を含有した窒化シリコン膜、または炭素およびホウ素を含有した窒化シリコン膜である、半導体装置の製造方法。 - 請求項6記載の半導体装置の製造方法において、
前記第2絶縁膜の水素含有量は、1%以下である、半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法において、
前記第2絶縁膜の厚さは、100〜200nmである、半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法において、
前記第1絶縁膜は、前記第1クラッド層と同じ材質からなり、前記第1絶縁膜の厚さは、50〜300nmである、半導体装置の製造方法。
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