WO2008149584A1 - 電子部品装置およびその製造方法 - Google Patents

電子部品装置およびその製造方法 Download PDF

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Publication number
WO2008149584A1
WO2008149584A1 PCT/JP2008/054011 JP2008054011W WO2008149584A1 WO 2008149584 A1 WO2008149584 A1 WO 2008149584A1 JP 2008054011 W JP2008054011 W JP 2008054011W WO 2008149584 A1 WO2008149584 A1 WO 2008149584A1
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WO
WIPO (PCT)
Prior art keywords
melting
point metal
low
bonding
composed mainly
Prior art date
Application number
PCT/JP2008/054011
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English (en)
French (fr)
Inventor
Yuji Kimura
Hiroki Horiguchi
Original Assignee
Murata Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co., Ltd. filed Critical Murata Manufacturing Co., Ltd.
Priority to JP2009517740A priority Critical patent/JP5093235B2/ja
Priority to EP08721431.8A priority patent/EP2157605B1/en
Priority to CN2008800184120A priority patent/CN101681888B/zh
Publication of WO2008149584A1 publication Critical patent/WO2008149584A1/ja
Priority to US12/629,990 priority patent/US20100089629A1/en
Priority to US13/181,614 priority patent/US8794498B2/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0172—Seals
    • B81C2203/019—Seals characterised by the material or arrangement of seals between parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/036—Fusion bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
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    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Die Bonding (AREA)

Abstract

　たとえばＳｎを主成分とする低融点金属を接合材として用いて、たとえばＣｕを主成分とする高融点金属からなる導体膜同士を接合するに当たって、接合のために要する時間の短縮化を図る。 　接合されるべき第１および第２の導体膜（１３および１４）を構成する高融点金属と同種のたとえばＣｕ主成分とする高融点金属からなる高融点金属層（１７）を厚み方向に挟むように、たとえばＳｎを主成分とする低融点金属からなる低融点金属層（１６および１８）を配置した状態で、加熱接合工程を実施する。高融点金属と低融点金属との金属間化合物を生成すべく、低融点金属層（１６および１８）の各々中に高融点金属を拡散させるべき距離を短くすることができるので、拡散に要する時間を短縮することができ、そのため、接合に要する時間を短縮することができる。
PCT/JP2008/054011 2007-06-04 2008-03-06 電子部品装置およびその製造方法 WO2008149584A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009517740A JP5093235B2 (ja) 2007-06-04 2008-03-06 電子部品装置およびその製造方法
EP08721431.8A EP2157605B1 (en) 2007-06-04 2008-03-06 Electronic part apparatus and process for manufacturing the same
CN2008800184120A CN101681888B (zh) 2007-06-04 2008-03-06 电子零部件装置及其制造方法
US12/629,990 US20100089629A1 (en) 2007-06-04 2009-12-03 Electronic component device and method for producing the same
US13/181,614 US8794498B2 (en) 2007-06-04 2011-07-13 Electronic component device and method for producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-147624 2007-06-04
JP2007147624 2007-06-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/629,990 Continuation US20100089629A1 (en) 2007-06-04 2009-12-03 Electronic component device and method for producing the same

Publications (1)

Publication Number Publication Date
WO2008149584A1 true WO2008149584A1 (ja) 2008-12-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054011 WO2008149584A1 (ja) 2007-06-04 2008-03-06 電子部品装置およびその製造方法

Country Status (5)

Country Link
US (2) US20100089629A1 (ja)
EP (1) EP2157605B1 (ja)
JP (1) JP5093235B2 (ja)
CN (1) CN101681888B (ja)
WO (1) WO2008149584A1 (ja)

Cited By (6)

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Publication number Priority date Publication date Assignee Title
JP2010050163A (ja) * 2008-08-19 2010-03-04 Osaka Univ 電子素子の実装方法および該実装方法によって実装された電子部品
JP2013093472A (ja) * 2011-10-26 2013-05-16 Toshiba Corp 部材の接合構造およびその接合方法、パッケージ
JP2013243246A (ja) * 2012-05-21 2013-12-05 Panasonic Corp 半導体素子の接合構造体と製造方法
JP2014060458A (ja) * 2013-12-27 2014-04-03 Fujitsu Semiconductor Ltd 半導体装置とその製造方法
JP2014060341A (ja) * 2012-09-19 2014-04-03 Toshiba Corp 半導体装置および半導体装置の製造方法
JP2014207388A (ja) * 2013-04-15 2014-10-30 株式会社東芝 半導体パッケージ

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TWI461252B (zh) 2010-12-24 2014-11-21 Murata Manufacturing Co A bonding method, a bonding structure, an electronic device, an electronic device manufacturing method, and an electronic component
JP2012174332A (ja) * 2011-02-17 2012-09-10 Fujitsu Ltd 導電性接合材料、導体の接合方法、及び半導体装置の製造方法
EP2597067A1 (fr) * 2011-11-23 2013-05-29 Micro Crystal AG Procédé de fabrication d'un dispositif d'encapsulage
JP5976379B2 (ja) * 2012-04-26 2016-08-23 株式会社東芝 電子機器及びその製造方法
US9024205B2 (en) 2012-12-03 2015-05-05 Invensas Corporation Advanced device assembly structures and methods
JP6251514B2 (ja) 2013-08-21 2017-12-20 株式会社フルヤ金属 摩擦攪拌接合用ツール
JP6288284B2 (ja) * 2014-09-10 2018-03-07 株式会社村田製作所 金属間化合物の生成方法
DE102014221618A1 (de) * 2014-10-24 2016-04-28 Robert Bosch Gmbh Verfahren zum Verbinden zweier Substrate, entsprechende Anordnung zweier Substrate und entsprechendes Substrat
US20160339538A1 (en) * 2015-05-18 2016-11-24 Toyota Motor Engineering & Manufacturing North America, Inc. High temperature bonding processes incorporating traces
CN105906222B (zh) * 2016-07-05 2018-08-31 洛阳兰迪玻璃机器股份有限公司 一种钢化真空玻璃
US10425084B2 (en) * 2017-10-03 2019-09-24 Murata Manufacturing Co., Ltd. Oven controlled MEMS oscillator and system and method for calibrating the same
CN111122003A (zh) * 2018-10-31 2020-05-08 北京梦之墨科技有限公司 一种可变图形及电子器件
CN110350061A (zh) * 2019-07-10 2019-10-18 佛山市国星半导体技术有限公司 一种免用封装胶的led芯片、封装器件及封装方法
CN113013044A (zh) * 2021-02-20 2021-06-22 山东云海国创云计算装备产业创新中心有限公司 一种芯片封装方法和芯片封装结构
CN114436207B (zh) * 2022-04-01 2022-07-29 杭州海康微影传感科技有限公司 一种mems传感器及其制造方法、晶圆模组

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EP2157605A1 (en) 2010-02-24
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CN101681888A (zh) 2010-03-24
JP5093235B2 (ja) 2012-12-12
US20100089629A1 (en) 2010-04-15
EP2157605B1 (en) 2016-07-13
CN101681888B (zh) 2012-08-22
EP2157605A4 (en) 2013-09-25
US20110268977A1 (en) 2011-11-03

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