JP2012509581A - ヘテロ構造を作製するためのサファイア基板の表面の前処理 - Google Patents
ヘテロ構造を作製するためのサファイア基板の表面の前処理 Download PDFInfo
- Publication number
- JP2012509581A JP2012509581A JP2011536838A JP2011536838A JP2012509581A JP 2012509581 A JP2012509581 A JP 2012509581A JP 2011536838 A JP2011536838 A JP 2011536838A JP 2011536838 A JP2011536838 A JP 2011536838A JP 2012509581 A JP2012509581 A JP 2012509581A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- bonding
- sapphire
- manufacturing
- stoving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H10P14/20—
-
- H10P90/1922—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
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- H10P10/128—
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- H10P90/1914—
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- H10W10/181—
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0857854 | 2008-11-19 | ||
| FR0857854A FR2938702B1 (fr) | 2008-11-19 | 2008-11-19 | Preparation de surface d'un substrat saphir pour la realisation d'heterostructures |
| PCT/EP2009/065202 WO2010057842A1 (en) | 2008-11-19 | 2009-11-16 | Preparing a surface of a sapphire substrate for fabricating heterostructures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012509581A true JP2012509581A (ja) | 2012-04-19 |
| JP2012509581A5 JP2012509581A5 (enExample) | 2012-12-06 |
Family
ID=40796247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011536838A Withdrawn JP2012509581A (ja) | 2008-11-19 | 2009-11-16 | ヘテロ構造を作製するためのサファイア基板の表面の前処理 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20120015497A1 (enExample) |
| EP (1) | EP2359391A1 (enExample) |
| JP (1) | JP2012509581A (enExample) |
| KR (1) | KR20110086038A (enExample) |
| CN (1) | CN102217037A (enExample) |
| FR (1) | FR2938702B1 (enExample) |
| WO (1) | WO2010057842A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014178356A1 (ja) * | 2013-05-01 | 2014-11-06 | 信越化学工業株式会社 | ハイブリッド基板の製造方法及びハイブリッド基板 |
| JP2016181699A (ja) * | 2015-03-24 | 2016-10-13 | ソイテックSoitec | 基板の表面の金属汚染物を減少させるための方法 |
| KR20200019677A (ko) * | 2017-06-30 | 2020-02-24 | 소이텍 | 상이한 열 팽창 계수들을 갖는 지지 기판으로 박층을 전달하기 위한 프로세스 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103477420B (zh) | 2011-04-08 | 2016-11-16 | Ev集团E·索尔纳有限责任公司 | 永久性粘合晶片的方法 |
| FR2977260B1 (fr) | 2011-06-30 | 2013-07-19 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede |
| US8778737B2 (en) | 2011-10-31 | 2014-07-15 | International Business Machines Corporation | Flattened substrate surface for substrate bonding |
| US10052848B2 (en) | 2012-03-06 | 2018-08-21 | Apple Inc. | Sapphire laminates |
| JP6099744B2 (ja) * | 2012-07-24 | 2017-03-22 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | ウェハを持続的に結合する方法及び装置 |
| US9221289B2 (en) | 2012-07-27 | 2015-12-29 | Apple Inc. | Sapphire window |
| US9232672B2 (en) | 2013-01-10 | 2016-01-05 | Apple Inc. | Ceramic insert control mechanism |
| US9608433B2 (en) * | 2013-03-14 | 2017-03-28 | Hubbell Incorporated | GFCI test monitor circuit |
| US9678540B2 (en) | 2013-09-23 | 2017-06-13 | Apple Inc. | Electronic component embedded in ceramic material |
| US9632537B2 (en) | 2013-09-23 | 2017-04-25 | Apple Inc. | Electronic component embedded in ceramic material |
| US9154678B2 (en) | 2013-12-11 | 2015-10-06 | Apple Inc. | Cover glass arrangement for an electronic device |
| US9225056B2 (en) | 2014-02-12 | 2015-12-29 | Apple Inc. | Antenna on sapphire structure |
| US10406634B2 (en) | 2015-07-01 | 2019-09-10 | Apple Inc. | Enhancing strength in laser cutting of ceramic components |
| FR3042649B1 (fr) * | 2015-10-20 | 2019-06-21 | Soitec | Procede de fabrication d'une structure hybride |
| CN117373954A (zh) * | 2016-02-16 | 2024-01-09 | Ev 集团 E·索尔纳有限责任公司 | 用于接合衬底的方法与设备 |
| CN108493321A (zh) * | 2018-03-26 | 2018-09-04 | 华灿光电(浙江)有限公司 | 一种发光二极管芯片及其制备方法 |
| CN111041423B (zh) * | 2019-12-10 | 2021-11-19 | 太原理工大学 | 蓝宝石表面结构与成分梯度层设计改善其焊接性能的方法 |
| CN114695602B (zh) * | 2020-12-29 | 2025-12-16 | 广东中图半导体科技股份有限公司 | 一种双层图形化蓝宝石衬底、制备方法及led外延片 |
| CN119812021B (zh) * | 2024-12-27 | 2025-06-27 | 杭州芯聚半导体有限公司 | 一种蓝宝石衬底与硅衬底热压键合涨缩问题的改善方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5849627A (en) * | 1990-02-07 | 1998-12-15 | Harris Corporation | Bonded wafer processing with oxidative bonding |
| JPH0636413B2 (ja) * | 1990-03-29 | 1994-05-11 | 信越半導体株式会社 | 半導体素子形成用基板の製造方法 |
| JPH05235312A (ja) * | 1992-02-19 | 1993-09-10 | Fujitsu Ltd | 半導体基板及びその製造方法 |
| US5441591A (en) * | 1993-06-07 | 1995-08-15 | The United States Of America As Represented By The Secretary Of The Navy | Silicon to sapphire bond |
| JP3250721B2 (ja) * | 1995-12-12 | 2002-01-28 | キヤノン株式会社 | Soi基板の製造方法 |
| EP1018153A1 (en) * | 1997-08-29 | 2000-07-12 | Sharon N. Farrens | In situ plasma wafer bonding method |
| US6423613B1 (en) * | 1998-11-10 | 2002-07-23 | Micron Technology, Inc. | Low temperature silicon wafer bond process with bulk material bond strength |
| US6281146B1 (en) * | 1999-09-15 | 2001-08-28 | Taiwan Semiconductor Manufacturing Company | Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformity |
| US6563133B1 (en) * | 2000-08-09 | 2003-05-13 | Ziptronix, Inc. | Method of epitaxial-like wafer bonding at low temperature and bonded structure |
| US6576564B2 (en) * | 2000-12-07 | 2003-06-10 | Micron Technology, Inc. | Photo-assisted remote plasma apparatus and method |
| US6930041B2 (en) * | 2000-12-07 | 2005-08-16 | Micron Technology, Inc. | Photo-assisted method for semiconductor fabrication |
| US20030089950A1 (en) * | 2001-11-15 | 2003-05-15 | Kuech Thomas F. | Bonding of silicon and silicon-germanium to insulating substrates |
| SE521938C2 (sv) * | 2001-12-27 | 2003-12-23 | Cerbio Tech Ab | Keramiskt material, förfarande för framställning av keramiskt material och benimplantat, tandfyllnadsimplantat och biocement innefattande det keramiska materialet |
| US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| US6911375B2 (en) * | 2003-06-02 | 2005-06-28 | International Business Machines Corporation | Method of fabricating silicon devices on sapphire with wafer bonding at low temperature |
| DE10326578B4 (de) * | 2003-06-12 | 2006-01-19 | Siltronic Ag | Verfahren zur Herstellung einer SOI-Scheibe |
| FR2884966B1 (fr) * | 2005-04-22 | 2007-08-17 | Soitec Silicon On Insulator | Procede de collage de deux tranches realisees dans des materiaux choisis parmi les materiaux semiconducteurs |
| US7601271B2 (en) * | 2005-11-28 | 2009-10-13 | S.O.I.Tec Silicon On Insulator Technologies | Process and equipment for bonding by molecular adhesion |
-
2008
- 2008-11-19 FR FR0857854A patent/FR2938702B1/fr not_active Expired - Fee Related
-
2009
- 2009-11-16 CN CN2009801460442A patent/CN102217037A/zh active Pending
- 2009-11-16 WO PCT/EP2009/065202 patent/WO2010057842A1/en not_active Ceased
- 2009-11-16 KR KR1020117010800A patent/KR20110086038A/ko not_active Withdrawn
- 2009-11-16 US US13/130,239 patent/US20120015497A1/en not_active Abandoned
- 2009-11-16 EP EP09749151A patent/EP2359391A1/en not_active Withdrawn
- 2009-11-16 JP JP2011536838A patent/JP2012509581A/ja not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014178356A1 (ja) * | 2013-05-01 | 2014-11-06 | 信越化学工業株式会社 | ハイブリッド基板の製造方法及びハイブリッド基板 |
| KR20160002814A (ko) * | 2013-05-01 | 2016-01-08 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 하이브리드 기판의 제조 방법 및 하이브리드 기판 |
| JPWO2014178356A1 (ja) * | 2013-05-01 | 2017-02-23 | 信越化学工業株式会社 | ハイブリッド基板の製造方法及びハイブリッド基板 |
| US9741603B2 (en) | 2013-05-01 | 2017-08-22 | Shin-Etsu Chemical Co., Ltd. | Method for producing hybrid substrate, and hybrid substrate |
| KR102229397B1 (ko) | 2013-05-01 | 2021-03-17 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 하이브리드 기판의 제조 방법 및 하이브리드 기판 |
| JP2016181699A (ja) * | 2015-03-24 | 2016-10-13 | ソイテックSoitec | 基板の表面の金属汚染物を減少させるための方法 |
| KR20200019677A (ko) * | 2017-06-30 | 2020-02-24 | 소이텍 | 상이한 열 팽창 계수들을 갖는 지지 기판으로 박층을 전달하기 위한 프로세스 |
| KR102552244B1 (ko) * | 2017-06-30 | 2023-07-06 | 소이텍 | 상이한 열 팽창 계수들을 갖는 지지 기판으로 박층을 전달하기 위한 프로세스 |
| US11742817B2 (en) | 2017-06-30 | 2023-08-29 | Soitec | Process for transferring a thin layer to a support substrate that have different thermal expansion coefficients |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2938702A1 (fr) | 2010-05-21 |
| WO2010057842A1 (en) | 2010-05-27 |
| EP2359391A1 (en) | 2011-08-24 |
| FR2938702B1 (fr) | 2011-03-04 |
| US20120015497A1 (en) | 2012-01-19 |
| CN102217037A (zh) | 2011-10-12 |
| KR20110086038A (ko) | 2011-07-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120924 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121018 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20130617 |