CN101438392A - 非易失纳米晶体存储器及其方法 - Google Patents

非易失纳米晶体存储器及其方法 Download PDF

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Publication number
CN101438392A
CN101438392A CNA2005800409629A CN200580040962A CN101438392A CN 101438392 A CN101438392 A CN 101438392A CN A2005800409629 A CNA2005800409629 A CN A2005800409629A CN 200580040962 A CN200580040962 A CN 200580040962A CN 101438392 A CN101438392 A CN 101438392A
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CN
China
Prior art keywords
insulating barrier
forms
nitrogen content
semiconductor device
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800409629A
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English (en)
Chinese (zh)
Inventor
拉杰什·A·拉奥
拉马钱德兰·穆拉利德哈
布鲁斯·E·怀特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN101438392A publication Critical patent/CN101438392A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/697—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having trapping at multiple separated sites, e.g. multi-particles trapping sites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Carbon And Carbon Compounds (AREA)
CNA2005800409629A 2005-01-26 2005-12-14 非易失纳米晶体存储器及其方法 Pending CN101438392A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/043,826 2005-01-26
US11/043,826 US7361567B2 (en) 2005-01-26 2005-01-26 Non-volatile nanocrystal memory and method therefor

Publications (1)

Publication Number Publication Date
CN101438392A true CN101438392A (zh) 2009-05-20

Family

ID=36697390

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800409629A Pending CN101438392A (zh) 2005-01-26 2005-12-14 非易失纳米晶体存储器及其方法

Country Status (9)

Country Link
US (1) US7361567B2 (enExample)
EP (1) EP1844492B1 (enExample)
JP (1) JP4980931B2 (enExample)
KR (1) KR101219067B1 (enExample)
CN (1) CN101438392A (enExample)
AT (1) ATE473515T1 (enExample)
DE (1) DE602005022229D1 (enExample)
TW (1) TWI407492B (enExample)
WO (1) WO2006080999A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102709315A (zh) * 2012-05-22 2012-10-03 上海华力微电子有限公司 一种具有锥形能带的be-sonos结构器件及形成方法
CN102709330A (zh) * 2012-05-22 2012-10-03 上海华力微电子有限公司 一种具有低操作电压的be-sonos结构器件及形成方法

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KR100673205B1 (ko) * 2004-11-24 2007-01-22 주식회사 하이닉스반도체 플래쉬 메모리소자의 제조방법
US20060166435A1 (en) * 2005-01-21 2006-07-27 Teo Lee W Synthesis of GE nanocrystal memory cell and using a block layer to control oxidation kinetics
US7338894B2 (en) * 2005-01-26 2008-03-04 Freescale Semiconductor, Inc. Semiconductor device having nitridated oxide layer and method therefor
JP2007036025A (ja) * 2005-07-28 2007-02-08 Nec Electronics Corp 不揮発性メモリ半導体装置およびその製造方法
US7525149B2 (en) * 2005-08-24 2009-04-28 Micron Technology, Inc. Combined volatile and non-volatile memory device with graded composition insulator stack
TWI289336B (en) * 2005-11-07 2007-11-01 Ind Tech Res Inst Nanocrystal memory component, manufacturing method thereof and memory comprising the same
US7767588B2 (en) * 2006-02-28 2010-08-03 Freescale Semiconductor, Inc. Method for forming a deposited oxide layer
US7773493B2 (en) * 2006-09-29 2010-08-10 Intel Corporation Probe-based storage device
US20080150004A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US8686490B2 (en) * 2006-12-20 2014-04-01 Sandisk Corporation Electron blocking layers for electronic devices
US20080150009A1 (en) * 2006-12-20 2008-06-26 Nanosys, Inc. Electron Blocking Layers for Electronic Devices
US7847341B2 (en) 2006-12-20 2010-12-07 Nanosys, Inc. Electron blocking layers for electronic devices
US7846793B2 (en) * 2007-10-03 2010-12-07 Applied Materials, Inc. Plasma surface treatment for SI and metal nanocrystal nucleation
US7871886B2 (en) * 2008-12-19 2011-01-18 Freescale Semiconductor, Inc. Nanocrystal memory with differential energy bands and method of formation
US7799634B2 (en) * 2008-12-19 2010-09-21 Freescale Semiconductor, Inc. Method of forming nanocrystals
US8021970B2 (en) * 2009-03-20 2011-09-20 Freescale Semiconductor, Inc. Method of annealing a dielectric layer
JP6125846B2 (ja) * 2012-03-22 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US8994006B2 (en) * 2012-10-02 2015-03-31 International Business Machines Corporation Non-volatile memory device employing semiconductor nanoparticles
US8895397B1 (en) 2013-10-15 2014-11-25 Globalfoundries Singapore Pte. Ltd. Methods for forming thin film storage memory cells
US9171858B2 (en) 2013-12-30 2015-10-27 Globalfoundries Singapore Pte. Ltd. Multi-level memory cells and methods for forming multi-level memory cells
US9953841B2 (en) * 2015-05-08 2018-04-24 Macronix International Co., Ltd. Semiconductor device and method of fabricating the same
DE102020100099B4 (de) * 2019-09-30 2025-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. Gatestrukturen in halbleitervorrichtungen und deren herstellung
US11756832B2 (en) * 2019-09-30 2023-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gate structures in semiconductor devices

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US6320784B1 (en) * 2000-03-14 2001-11-20 Motorola, Inc. Memory cell and method for programming thereof
AU2001263370A1 (en) * 2000-06-16 2002-01-02 Motorola, Inc. Memory device including nanoclusters and method for manufacture
US6413819B1 (en) * 2000-06-16 2002-07-02 Motorola, Inc. Memory device and method for using prefabricated isolated storage elements
US6297095B1 (en) * 2000-06-16 2001-10-02 Motorola, Inc. Memory device that includes passivated nanoclusters and method for manufacture
TW525263B (en) * 2000-09-28 2003-03-21 Chartered Semiconductor Mfg Formation of interfacial oxide layer at the Si3N4/Si interface by H2/O2 annealing
US6444545B1 (en) * 2000-12-19 2002-09-03 Motorola, Inc. Device structure for storing charge and method therefore
JP2002261175A (ja) 2000-12-28 2002-09-13 Sony Corp 不揮発性半導体記憶装置およびその製造方法
JP2002231834A (ja) * 2001-02-02 2002-08-16 Ricoh Co Ltd 半導体記憶装置
US6713127B2 (en) * 2001-12-28 2004-03-30 Applied Materials, Inc. Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
TW569377B (en) * 2002-03-20 2004-01-01 Taiwan Semiconductor Mfg Improvement method for thickness uniformity of super-thin nitridation gate dielectric
JP2004207613A (ja) * 2002-12-26 2004-07-22 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7338894B2 (en) * 2005-01-26 2008-03-04 Freescale Semiconductor, Inc. Semiconductor device having nitridated oxide layer and method therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102709315A (zh) * 2012-05-22 2012-10-03 上海华力微电子有限公司 一种具有锥形能带的be-sonos结构器件及形成方法
CN102709330A (zh) * 2012-05-22 2012-10-03 上海华力微电子有限公司 一种具有低操作电压的be-sonos结构器件及形成方法
CN102709330B (zh) * 2012-05-22 2016-04-27 上海华力微电子有限公司 一种具有低操作电压的be-sonos结构器件及形成方法

Also Published As

Publication number Publication date
EP1844492A4 (en) 2009-10-21
TWI407492B (zh) 2013-09-01
KR20070099625A (ko) 2007-10-09
DE602005022229D1 (de) 2010-08-19
KR101219067B1 (ko) 2013-01-18
US20060166452A1 (en) 2006-07-27
ATE473515T1 (de) 2010-07-15
JP2008532260A (ja) 2008-08-14
TW200629383A (en) 2006-08-16
EP1844492A2 (en) 2007-10-17
JP4980931B2 (ja) 2012-07-18
WO2006080999A3 (en) 2009-04-23
WO2006080999A2 (en) 2006-08-03
US7361567B2 (en) 2008-04-22
EP1844492B1 (en) 2010-07-07

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Open date: 20090520