JPH11220103A - 半導体記憶装置及びその製造方法 - Google Patents

半導体記憶装置及びその製造方法

Info

Publication number
JPH11220103A
JPH11220103A JP10019578A JP1957898A JPH11220103A JP H11220103 A JPH11220103 A JP H11220103A JP 10019578 A JP10019578 A JP 10019578A JP 1957898 A JP1957898 A JP 1957898A JP H11220103 A JPH11220103 A JP H11220103A
Authority
JP
Japan
Prior art keywords
layer
substrate
bonding
capacitor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10019578A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11220103A5 (enExample
Inventor
Takashi Kawakubo
隆 川久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10019578A priority Critical patent/JPH11220103A/ja
Priority to US09/143,400 priority patent/US6242298B1/en
Publication of JPH11220103A publication Critical patent/JPH11220103A/ja
Publication of JPH11220103A5 publication Critical patent/JPH11220103A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP10019578A 1997-08-29 1998-01-30 半導体記憶装置及びその製造方法 Pending JPH11220103A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10019578A JPH11220103A (ja) 1998-01-30 1998-01-30 半導体記憶装置及びその製造方法
US09/143,400 US6242298B1 (en) 1997-08-29 1998-08-28 Semiconductor memory device having epitaxial planar capacitor and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10019578A JPH11220103A (ja) 1998-01-30 1998-01-30 半導体記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH11220103A true JPH11220103A (ja) 1999-08-10
JPH11220103A5 JPH11220103A5 (enExample) 2005-07-28

Family

ID=12003170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10019578A Pending JPH11220103A (ja) 1997-08-29 1998-01-30 半導体記憶装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPH11220103A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128643A (ja) * 2004-09-30 2006-05-18 Tdk Corp 誘電体薄膜、薄膜誘電体素子及びその製造方法
CN113451354A (zh) * 2020-03-24 2021-09-28 铠侠股份有限公司 存储装置及存储装置的制造方法
JP2022513855A (ja) * 2018-12-18 2022-02-09 長江存儲科技有限責任公司 転写された相互接続層を有する３次元メモリデバイスおよびそれらを形成するための方法
KR20220088472A (ko) * 2020-06-26 2022-06-27 샌디스크 테크놀로지스 엘엘씨 접합된 메모리 디바이스 및 그 제조 방법
US11903218B2 (en) 2020-06-26 2024-02-13 Sandisk Technologies Llc Bonded memory devices and methods of making the same
US12362301B2 (en) 2020-06-26 2025-07-15 SanDisk Technologies, Inc. Bonded memory devices and methods of making the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128643A (ja) * 2004-09-30 2006-05-18 Tdk Corp 誘電体薄膜、薄膜誘電体素子及びその製造方法
JP2022513855A (ja) * 2018-12-18 2022-02-09 長江存儲科技有限責任公司 転写された相互接続層を有する３次元メモリデバイスおよびそれらを形成するための方法
CN113451354A (zh) * 2020-03-24 2021-09-28 铠侠股份有限公司 存储装置及存储装置的制造方法
CN113451354B (zh) * 2020-03-24 2024-03-19 铠侠股份有限公司 存储装置及存储装置的制造方法
KR20220088472A (ko) * 2020-06-26 2022-06-27 샌디스크 테크놀로지스 엘엘씨 접합된 메모리 디바이스 및 그 제조 방법
US11903218B2 (en) 2020-06-26 2024-02-13 Sandisk Technologies Llc Bonded memory devices and methods of making the same
US12362301B2 (en) 2020-06-26 2025-07-15 SanDisk Technologies, Inc. Bonded memory devices and methods of making the same

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