JPH10303396A5 - - Google Patents

Info

Publication number
JPH10303396A5
JPH10303396A5 JP1998043657A JP4365798A JPH10303396A5 JP H10303396 A5 JPH10303396 A5 JP H10303396A5 JP 1998043657 A JP1998043657 A JP 1998043657A JP 4365798 A JP4365798 A JP 4365798A JP H10303396 A5 JPH10303396 A5 JP H10303396A5
Authority
JP
Japan
Prior art keywords
electrode
capacitor
transistor
memory device
dielectric film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998043657A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10303396A (ja
JP4053647B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP04365798A priority Critical patent/JP4053647B2/ja
Priority claimed from JP04365798A external-priority patent/JP4053647B2/ja
Priority to US09/030,809 priority patent/US6015990A/en
Publication of JPH10303396A publication Critical patent/JPH10303396A/ja
Publication of JPH10303396A5 publication Critical patent/JPH10303396A5/ja
Application granted granted Critical
Publication of JP4053647B2 publication Critical patent/JP4053647B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP04365798A 1997-02-27 1998-02-25 半導体記憶装置及びその製造方法 Expired - Fee Related JP4053647B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP04365798A JP4053647B2 (ja) 1997-02-27 1998-02-25 半導体記憶装置及びその製造方法
US09/030,809 US6015990A (en) 1997-02-27 1998-02-26 Semiconductor memory device and method of manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4400997 1997-02-27
JP9-44009 1997-02-27
JP04365798A JP4053647B2 (ja) 1997-02-27 1998-02-25 半導体記憶装置及びその製造方法

Publications (3)

Publication Number Publication Date
JPH10303396A JPH10303396A (ja) 1998-11-13
JPH10303396A5 true JPH10303396A5 (enExample) 2005-04-21
JP4053647B2 JP4053647B2 (ja) 2008-02-27

Family

ID=26383457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04365798A Expired - Fee Related JP4053647B2 (ja) 1997-02-27 1998-02-25 半導体記憶装置及びその製造方法

Country Status (2)

Country Link
US (1) US6015990A (enExample)
JP (1) JP4053647B2 (enExample)

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JP4103421B2 (ja) * 2001-03-28 2008-06-18 セイコーエプソン株式会社 電子デバイス及び電子機器
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US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6498358B1 (en) 2001-07-20 2002-12-24 Motorola, Inc. Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
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JP4540899B2 (ja) * 2001-09-13 2010-09-08 パナソニック株式会社 半導体装置の製造方法
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KR100480469B1 (ko) * 2002-10-17 2005-04-07 동부아남반도체 주식회사 반도체 소자내 커패시터 제조방법
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
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US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
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US6900502B2 (en) * 2003-04-03 2005-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel on insulator device
US6882025B2 (en) * 2003-04-25 2005-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Strained-channel transistor and methods of manufacture
US6867433B2 (en) * 2003-04-30 2005-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors
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US20050012087A1 (en) * 2003-07-15 2005-01-20 Yi-Ming Sheu Self-aligned MOSFET having an oxide region below the channel
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US6940705B2 (en) * 2003-07-25 2005-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitor with enhanced performance and method of manufacture
US20050019960A1 (en) * 2003-07-25 2005-01-27 Moon-Sook Lee Method and apparatus for forming a ferroelectric layer
US7078742B2 (en) * 2003-07-25 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel semiconductor structure and method of fabricating the same
US7101742B2 (en) * 2003-08-12 2006-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel complementary field-effect transistors and methods of manufacture
US7112495B2 (en) * 2003-08-15 2006-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
US20050035410A1 (en) * 2003-08-15 2005-02-17 Yee-Chia Yeo Semiconductor diode with reduced leakage
US7071052B2 (en) * 2003-08-18 2006-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Resistor with reduced leakage
US7888201B2 (en) 2003-11-04 2011-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US7161227B2 (en) 2001-08-14 2007-01-09 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object

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