JP4053647B2 - 半導体記憶装置及びその製造方法 - Google Patents

半導体記憶装置及びその製造方法 Download PDF

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Publication number
JP4053647B2
JP4053647B2 JP04365798A JP4365798A JP4053647B2 JP 4053647 B2 JP4053647 B2 JP 4053647B2 JP 04365798 A JP04365798 A JP 04365798A JP 4365798 A JP4365798 A JP 4365798A JP 4053647 B2 JP4053647 B2 JP 4053647B2
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Japan
Prior art keywords
film
electrode
memory device
semiconductor memory
capacitor
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Expired - Fee Related
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JP04365798A
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English (en)
Japanese (ja)
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JPH10303396A (ja
JPH10303396A5 (enExample
Inventor
克彦 稗田
経敏 有門
勝弥 奥村
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Toshiba Corp
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Toshiba Corp
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Priority to JP04365798A priority Critical patent/JP4053647B2/ja
Priority to US09/030,809 priority patent/US6015990A/en
Publication of JPH10303396A publication Critical patent/JPH10303396A/ja
Publication of JPH10303396A5 publication Critical patent/JPH10303396A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP04365798A 1997-02-27 1998-02-25 半導体記憶装置及びその製造方法 Expired - Fee Related JP4053647B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP04365798A JP4053647B2 (ja) 1997-02-27 1998-02-25 半導体記憶装置及びその製造方法
US09/030,809 US6015990A (en) 1997-02-27 1998-02-26 Semiconductor memory device and method of manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-44009 1997-02-27
JP4400997 1997-02-27
JP04365798A JP4053647B2 (ja) 1997-02-27 1998-02-25 半導体記憶装置及びその製造方法

Publications (3)

Publication Number Publication Date
JPH10303396A JPH10303396A (ja) 1998-11-13
JPH10303396A5 JPH10303396A5 (enExample) 2005-04-21
JP4053647B2 true JP4053647B2 (ja) 2008-02-27

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Family Applications (1)

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JP04365798A Expired - Fee Related JP4053647B2 (ja) 1997-02-27 1998-02-25 半導体記憶装置及びその製造方法

Country Status (2)

Country Link
US (1) US6015990A (enExample)
JP (1) JP4053647B2 (enExample)

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KR100291182B1 (ko) * 1998-10-28 2001-07-12 박종섭 강유전체메모리장치
JP3249496B2 (ja) * 1998-11-10 2002-01-21 株式会社東芝 半導体装置及び半導体装置の製造方法
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JP3955409B2 (ja) * 1999-03-17 2007-08-08 株式会社ルネサステクノロジ 半導体記憶装置
KR20010061172A (ko) * 1999-12-28 2001-07-07 박종섭 반도체 소자의 강유전체 캐패시터 제조 방법
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JP4540899B2 (ja) * 2001-09-13 2010-09-08 パナソニック株式会社 半導体装置の製造方法
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KR100449948B1 (ko) * 2002-05-18 2004-09-30 주식회사 하이닉스반도체 콘택저항을 감소시킨 콘택플러그 형성방법
KR100480469B1 (ko) * 2002-10-17 2005-04-07 동부아남반도체 주식회사 반도체 소자내 커패시터 제조방법
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
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JPH10303396A (ja) 1998-11-13
US6015990A (en) 2000-01-18

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