JP2010050374A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2010050374A JP2010050374A JP2008215125A JP2008215125A JP2010050374A JP 2010050374 A JP2010050374 A JP 2010050374A JP 2008215125 A JP2008215125 A JP 2008215125A JP 2008215125 A JP2008215125 A JP 2008215125A JP 2010050374 A JP2010050374 A JP 2010050374A
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- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- 239000003990 capacitor Substances 0.000 claims abstract description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 10
- 238000009825 accumulation Methods 0.000 abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】MOS型のキャパシタの電荷蓄積領域6のシリコン基板にトレンチを設けることにより、P型シリコン基板1とN型低濃度ウェル領域2の接触面積を減少させたから、N型低濃度ウェル領域2からP型シリコン基板1へのリーク電流を低減させたMOS型キャパシタを得ることが出来る。
【選択図】図1
Description
2 N型低濃度ウェル領域
3 トレンチ
4 酸化膜
5 ポリシリコン電極
6 電荷蓄積領域
7 N型高濃度領域
8 基板側電極
9 N型高濃度電荷蓄積領域
100 半導体装置
101 半導体装置
Claims (2)
- MOS型キャパシタを含む半導体装置であって、
第1導電型シリコン基板と、
前記シリコン基板に拡散された第2導電型低濃度ウェル領域と、
前記第2導電型低濃度ウェル領域に形成された電荷蓄積領域と、
前記電荷蓄積領域に形成された複数のトレンチと、
前記電荷蓄積領域の外側に形成され、前記第2導電型低濃度ウェル領域より不純物濃度の高い第2導電型高濃度領域と、
前記電荷蓄積領域内の前記複数のトレンチおよび前記第1導電型シリコン基板表面に設けられた酸化膜と、
前記酸化膜上に設けられたポリシリコン電極と、
前記第2導電型高濃度領域と接触するように設けられた基板側電極とからなる半導体装置。 - MOS型キャパシタを含む半導体装置であって、
第1導電型シリコン基板と、
前記シリコン基板に拡散された第2導電型低濃度ウェル領域と、
前記第2導電型低濃度ウェル領域に形成された電荷蓄積領域と、
前記電荷蓄積領域に形成された複数のトレンチと、
前記電荷蓄積領域の外側に形成され、前記第2導電型低濃度ウェル領域より不純物濃度の高い第2導電型高濃度領域と、
前記電荷蓄積領域内の前記複数のトレンチおよび前記第1導電型シリコン基板表面に設けられた第2導電型高濃度電荷蓄積領域と、
前記第2導電型電荷蓄積領域上に設けられた酸化膜と、
前記酸化膜上に設けられたポリシリコン電極と、
前記第2導電型高濃度領域と接触するように設けられた基板側電極とからなる半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008215125A JP2010050374A (ja) | 2008-08-25 | 2008-08-25 | 半導体装置 |
KR1020090076117A KR20100024353A (ko) | 2008-08-25 | 2009-08-18 | 반도체 디바이스 |
US12/545,431 US7952128B2 (en) | 2008-08-25 | 2009-08-21 | Semiconductor device |
TW98128205A TWI472040B (zh) | 2008-08-25 | 2009-08-21 | 半導體裝置 |
CN200910171599A CN101661961A (zh) | 2008-08-25 | 2009-08-25 | 半导体器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008215125A JP2010050374A (ja) | 2008-08-25 | 2008-08-25 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010050374A true JP2010050374A (ja) | 2010-03-04 |
Family
ID=41695543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008215125A Pending JP2010050374A (ja) | 2008-08-25 | 2008-08-25 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7952128B2 (ja) |
JP (1) | JP2010050374A (ja) |
KR (1) | KR20100024353A (ja) |
CN (1) | CN101661961A (ja) |
TW (1) | TWI472040B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020071320A1 (ja) * | 2018-10-04 | 2020-04-09 | ソニーセミコンダクタソリューションズ株式会社 | 半導体素子および半導体装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102544121A (zh) * | 2010-12-21 | 2012-07-04 | 上海华虹Nec电子有限公司 | 电压控制变容器结构及其制备方法 |
CN103000624B (zh) * | 2011-09-19 | 2015-07-01 | 群联电子股份有限公司 | 适于应用于集成电路的电容结构 |
CN107946359B (zh) * | 2017-05-02 | 2024-02-06 | 中国电子科技集团公司第二十四研究所 | 一种带电荷收集槽的功率mosfet器件及其制造方法 |
CN116544283B (zh) * | 2023-04-28 | 2024-06-14 | 上海朗矽科技有限公司 | 嵌入式电容器及嵌入式电容器的制作方法 |
Citations (3)
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JP2000340674A (ja) * | 1999-05-31 | 2000-12-08 | Mitsumi Electric Co Ltd | Mosコンデンサ及びmosコンデンサの製造方法 |
JP2003309182A (ja) * | 2002-04-17 | 2003-10-31 | Hitachi Ltd | 半導体装置の製造方法及び半導体装置 |
JP2006054403A (ja) * | 2004-08-16 | 2006-02-23 | Nec Electronics Corp | 半導体装置およびその製造方法 |
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-
2008
- 2008-08-25 JP JP2008215125A patent/JP2010050374A/ja active Pending
-
2009
- 2009-08-18 KR KR1020090076117A patent/KR20100024353A/ko not_active Application Discontinuation
- 2009-08-21 US US12/545,431 patent/US7952128B2/en not_active Expired - Fee Related
- 2009-08-21 TW TW98128205A patent/TWI472040B/zh not_active IP Right Cessation
- 2009-08-25 CN CN200910171599A patent/CN101661961A/zh active Pending
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JP2000340674A (ja) * | 1999-05-31 | 2000-12-08 | Mitsumi Electric Co Ltd | Mosコンデンサ及びmosコンデンサの製造方法 |
JP2003309182A (ja) * | 2002-04-17 | 2003-10-31 | Hitachi Ltd | 半導体装置の製造方法及び半導体装置 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020071320A1 (ja) * | 2018-10-04 | 2020-04-09 | ソニーセミコンダクタソリューションズ株式会社 | 半導体素子および半導体装置 |
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Also Published As
Publication number | Publication date |
---|---|
TW201017892A (en) | 2010-05-01 |
KR20100024353A (ko) | 2010-03-05 |
US7952128B2 (en) | 2011-05-31 |
TWI472040B (zh) | 2015-02-01 |
CN101661961A (zh) | 2010-03-03 |
US20100044765A1 (en) | 2010-02-25 |
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