JP2009164587A5 - - Google Patents

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Publication number
JP2009164587A5
JP2009164587A5 JP2008308748A JP2008308748A JP2009164587A5 JP 2009164587 A5 JP2009164587 A5 JP 2009164587A5 JP 2008308748 A JP2008308748 A JP 2008308748A JP 2008308748 A JP2008308748 A JP 2008308748A JP 2009164587 A5 JP2009164587 A5 JP 2009164587A5
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JP
Japan
Prior art keywords
state
electrode
antifuse
writing
voltage
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Application number
JP2008308748A
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English (en)
Japanese (ja)
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JP2009164587A (ja
JP5371400B2 (ja
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Priority to JP2008308748A priority Critical patent/JP5371400B2/ja
Priority claimed from JP2008308748A external-priority patent/JP5371400B2/ja
Publication of JP2009164587A publication Critical patent/JP2009164587A/ja
Publication of JP2009164587A5 publication Critical patent/JP2009164587A5/ja
Application granted granted Critical
Publication of JP5371400B2 publication Critical patent/JP5371400B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008308748A 2007-12-14 2008-12-03 メモリ及び半導体装置 Expired - Fee Related JP5371400B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008308748A JP5371400B2 (ja) 2007-12-14 2008-12-03 メモリ及び半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007323241 2007-12-14
JP2007323241 2007-12-14
JP2008308748A JP5371400B2 (ja) 2007-12-14 2008-12-03 メモリ及び半導体装置

Publications (3)

Publication Number Publication Date
JP2009164587A JP2009164587A (ja) 2009-07-23
JP2009164587A5 true JP2009164587A5 (enExample) 2012-01-12
JP5371400B2 JP5371400B2 (ja) 2013-12-18

Family

ID=40752007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008308748A Expired - Fee Related JP5371400B2 (ja) 2007-12-14 2008-12-03 メモリ及び半導体装置

Country Status (4)

Country Link
US (1) US8735885B2 (enExample)
JP (1) JP5371400B2 (enExample)
CN (1) CN101458966B (enExample)
TW (1) TWI478408B (enExample)

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US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
JP5641840B2 (ja) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
US8519509B2 (en) * 2010-04-16 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9342775B2 (en) * 2011-11-01 2016-05-17 Avery Dennison Corporation Dual mode chip having radio frequency identification and electronic article surveillance capability
CN104463266B (zh) * 2014-10-31 2018-07-10 江苏凯路威电子科技有限公司 Rfid防伪方法及芯片
US10476680B2 (en) * 2016-02-03 2019-11-12 Ememory Technology Inc. Electronic device with self-protection and anti-cloning capabilities and related method
CN106372498B (zh) * 2016-09-05 2020-08-28 新华三技术有限公司 一种软件保护的方法和装置
US10446248B1 (en) 2018-04-23 2019-10-15 Micron Technology, Inc. Non-volatile memory devices and systems with read-only memory features and methods for operating the same
US11049565B2 (en) * 2018-04-23 2021-06-29 Micron Technology, Inc. Non-volatile memory devices and systems with volatile memory features and methods for operating the same
CN113540076B (zh) * 2021-07-20 2024-11-05 立讯电子科技（昆山）有限公司 一种开关元件和电子设备

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