JP2018152153A - 不揮発性記憶装置およびその駆動方法 - Google Patents
不揮発性記憶装置およびその駆動方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 6
- 230000008859 change Effects 0.000 claims abstract description 147
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 description 46
- 229910052751 metal Inorganic materials 0.000 description 46
- 238000010586 diagram Methods 0.000 description 14
- 230000014759 maintenance of location Effects 0.000 description 6
- 230000010354 integration Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 241000588731 Hafnia Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 102200115883 rs121918076 Human genes 0.000 description 2
- 102220182402 rs80133178 Human genes 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 102220485790 Destrin_S40R_mutation Human genes 0.000 description 1
- 102220467908 Protein Dok-7_S30W_mutation Human genes 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 102220206201 rs1057524801 Human genes 0.000 description 1
- 102220153358 rs142411445 Human genes 0.000 description 1
- 102220141469 rs543096490 Human genes 0.000 description 1
- 102220088072 rs771342044 Human genes 0.000 description 1
- 102220085952 rs864622045 Human genes 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0064—Verifying circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/005—Read using potential difference applied between cell electrodes
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/33—Material including silicon
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- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
抵抗変化層40の抵抗値<<電流制限層60の抵抗値・・・(1)
の関係が成立すると、セット動作では、抵抗変化層40に電圧が印加されずに、抵抗変化層40内での金属イオン30aの拡散が起こり難くなる。つまり、セット動作ができないことを意味する。一方、
抵抗変化層40の抵抗値=電流制限層60の抵抗値・・・(2)
の関係が成立すると、電極間に印加される電圧の半分が抵抗変化層40に印加される。このため、セット電圧が最適値より上昇することになる。
抵抗変化層40の抵抗値>>電流制限層60の抵抗値・・・(3)
の関係が保つように、電流制限層60の抵抗値を設定する。
抵抗変化層40の抵抗値>電流制限層60の抵抗値・・・(4)
の関係が成立すると、フィラメント30fに電流が流れすぎて、フィラメント30fの破壊が起こる可能性がある。
抵抗変化層40の抵抗値(フィラメント30fの抵抗値)<<電流制限層60の抵抗値・・・(5)
の関係が成立すれば、電流制限層60によってフィラメント30fに流れる電流が制御できる。
Claims (2)
- 第1配線層と、
第2配線層と、
前記第1配線層と前記第2配線層との間に接続される金属イオン源層と、
前記金属イオン源層と前記第1配線層との間に接続され、前記金属イオン源層から放出される金属イオンがその内部に拡散することが可能な抵抗変化層と、
前記抵抗変化層に第1データを書き込むときは、前記第1配線層と前記第2配線層との間に第1セット電圧を印加し、前記第1データを読み出すときは、前記第1配線層と前記第2配線層との間に前記第1セット電圧よりも低い第1読出電圧を印加し、前記抵抗変化層に第2データを書き込むときは、前記第1配線層と前記第2配線層との間に前記第1セット電圧よりも高い第2セット電圧を印加し、前記第2データを読み出すときは、前記第1配線層と前記第2配線層との間に前記第1読出電圧よりも低い第2読出電圧を印加し、前記抵抗変化層に第3データを書き込むときは、前記第1配線層と前記第2配線層との間に前記第2セット電圧よりも高い第3セット電圧を印加し、前記第3データを読み出すときは、前記第1配線層と前記第2配線層との間に前記第2読出電圧よりも低い第3読出電圧を印加する制御回路部と、
を備えた不揮発性記憶装置。 - 第1配線層と第2配線層との間に、金属イオン源層、及び、前記金属イオン源層から放出される金属イオンが内部を拡散可能な抵抗変化層が直列に接続された不揮発性記憶装置の駆動方法であって、
前記第1配線層と前記第2配線層との間に第1セット電圧を印加することにより、前記抵抗変化層に第1データを書き込み、
前記第1配線層と前記第2配線層との間に前記第1セット電圧よりも低い第1読出電圧を印加することにより、前記第1データを読み出し、
前記第1配線層と前記第2配線層との間に前記第1セット電圧よりも高い第2セット電圧を印加することにより、前記抵抗変化層に第2データを書き込み、
前記第1配線層と前記第2配線層との間に前記第1読出電圧よりも低い第2読出電圧を印加することにより、前記第2データを読み出し、
前記第1配線層と前記第2配線層との間に前記第2セット電圧よりも高い第3セット電圧を印加することにより、前記抵抗変化層に第3データを書き込み、
前記第1配線層と前記第2配線層との間に前記第2読出電圧よりも低い第3読出電圧を印加することにより、前記第3データを読み出す、
不揮発性記憶装置の駆動方法。
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US201462031631P | 2014-07-31 | 2014-07-31 | |
US62/031,631 | 2014-07-31 |
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JP2014184844A Division JP2016033843A (ja) | 2014-07-31 | 2014-09-11 | 不揮発性記憶装置およびその駆動方法 |
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JP2018033711A Pending JP2018152153A (ja) | 2014-07-31 | 2018-02-27 | 不揮発性記憶装置およびその駆動方法 |
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TWI605622B (zh) * | 2016-04-27 | 2017-11-11 | 國立中山大學 | 電阻式記憶體 |
JP7150787B2 (ja) | 2020-07-31 | 2022-10-11 | ウィンボンド エレクトロニクス コーポレーション | 抵抗変化型クロスバーアレイ装置 |
FR3125163B1 (fr) * | 2021-07-12 | 2024-08-30 | Commissariat Energie Atomique | Procede de lecture d’une rram multi-niveaux |
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US20040257854A1 (en) * | 2003-06-18 | 2004-12-23 | Macronix International Co., Ltd. | Multi-level memory device and methods for programming and reading the same |
US20100165712A1 (en) * | 2008-12-29 | 2010-07-01 | Ferdinando Bedeschi | Method for low-stress multilevel reading of phase change memory cells and multilevel phase change memory |
JP2010225227A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2014099557A (ja) * | 2012-11-15 | 2014-05-29 | Toshiba Corp | 抵抗変化素子、記憶装置および駆動方法 |
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JP3658066B2 (ja) * | 1994-12-26 | 2005-06-08 | 新日本製鐵株式会社 | 不揮発性半導体記憶装置及びその書き換え方法 |
US5969985A (en) * | 1996-03-18 | 1999-10-19 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
KR100887138B1 (ko) * | 2007-08-10 | 2009-03-04 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치의 구동 방법 |
JP4901930B2 (ja) * | 2009-09-17 | 2012-03-21 | 株式会社東芝 | 不揮発性半導体記憶装置とその製造方法 |
JP5367641B2 (ja) * | 2010-06-03 | 2013-12-11 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US8693233B2 (en) * | 2010-06-18 | 2014-04-08 | Sandisk 3D Llc | Re-writable resistance-switching memory with balanced series stack |
KR101846336B1 (ko) * | 2010-06-25 | 2018-04-06 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 방법 |
KR20120063136A (ko) * | 2010-12-07 | 2012-06-15 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 구동방법 |
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KR102178832B1 (ko) * | 2014-07-22 | 2020-11-13 | 삼성전자 주식회사 | 저항성 메모리 장치 및 저항성 메모리 장치의 동작 방법 |
-
2014
- 2014-09-11 JP JP2014184844A patent/JP2016033843A/ja active Pending
-
2015
- 2015-03-06 US US14/640,478 patent/US20160035416A1/en not_active Abandoned
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- 2018-02-27 JP JP2018033711A patent/JP2018152153A/ja active Pending
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US20040257854A1 (en) * | 2003-06-18 | 2004-12-23 | Macronix International Co., Ltd. | Multi-level memory device and methods for programming and reading the same |
JP2005012186A (ja) * | 2003-06-18 | 2005-01-13 | Macronix Internatl Co Ltd | マルチレベルメモリ素子およびこれをプログラムし読出す方法 |
US20100165712A1 (en) * | 2008-12-29 | 2010-07-01 | Ferdinando Bedeschi | Method for low-stress multilevel reading of phase change memory cells and multilevel phase change memory |
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JP2010225227A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2014099557A (ja) * | 2012-11-15 | 2014-05-29 | Toshiba Corp | 抵抗変化素子、記憶装置および駆動方法 |
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