JP5371400B2 - メモリ及び半導体装置 - Google Patents

メモリ及び半導体装置

Info

Publication number
JP5371400B2
JP5371400B2 JP2008308748A JP2008308748A JP5371400B2 JP 5371400 B2 JP5371400 B2 JP 5371400B2 JP 2008308748 A JP2008308748 A JP 2008308748A JP 2008308748 A JP2008308748 A JP 2008308748A JP 5371400 B2 JP5371400 B2 JP 5371400B2
Authority
JP
Japan
Prior art keywords
state
antifuse
electrode
layer
written
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008308748A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009164587A5 (enExample
JP2009164587A (ja
Inventor
肇 徳永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008308748A priority Critical patent/JP5371400B2/ja
Publication of JP2009164587A publication Critical patent/JP2009164587A/ja
Publication of JP2009164587A5 publication Critical patent/JP2009164587A5/ja
Application granted granted Critical
Publication of JP5371400B2 publication Critical patent/JP5371400B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Read Only Memory (AREA)
JP2008308748A 2007-12-14 2008-12-03 メモリ及び半導体装置 Expired - Fee Related JP5371400B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008308748A JP5371400B2 (ja) 2007-12-14 2008-12-03 メモリ及び半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007323241 2007-12-14
JP2007323241 2007-12-14
JP2008308748A JP5371400B2 (ja) 2007-12-14 2008-12-03 メモリ及び半導体装置

Publications (3)

Publication Number Publication Date
JP2009164587A JP2009164587A (ja) 2009-07-23
JP2009164587A5 JP2009164587A5 (enExample) 2012-01-12
JP5371400B2 true JP5371400B2 (ja) 2013-12-18

Family

ID=40752007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008308748A Expired - Fee Related JP5371400B2 (ja) 2007-12-14 2008-12-03 メモリ及び半導体装置

Country Status (4)

Country Link
US (1) US8735885B2 (enExample)
JP (1) JP5371400B2 (enExample)
CN (1) CN101458966B (enExample)
TW (1) TWI478408B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
JP5641840B2 (ja) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
US8519509B2 (en) * 2010-04-16 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9342775B2 (en) * 2011-11-01 2016-05-17 Avery Dennison Corporation Dual mode chip having radio frequency identification and electronic article surveillance capability
CN104463266B (zh) * 2014-10-31 2018-07-10 江苏凯路威电子科技有限公司 Rfid防伪方法及芯片
US10476680B2 (en) * 2016-02-03 2019-11-12 Ememory Technology Inc. Electronic device with self-protection and anti-cloning capabilities and related method
CN106372498B (zh) * 2016-09-05 2020-08-28 新华三技术有限公司 一种软件保护的方法和装置
US10446248B1 (en) 2018-04-23 2019-10-15 Micron Technology, Inc. Non-volatile memory devices and systems with read-only memory features and methods for operating the same
US11049565B2 (en) * 2018-04-23 2021-06-29 Micron Technology, Inc. Non-volatile memory devices and systems with volatile memory features and methods for operating the same
CN113540076B (zh) * 2021-07-20 2024-11-05 立讯电子科技（昆山）有限公司 一种开关元件和电子设备

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US825694A (en) * 1905-03-29 1906-07-10 Emilio Barbaroux Means for signaling on automobiles or the like vehicles.
JPS60117660A (ja) 1983-11-30 1985-06-25 Fujitsu Ltd 半導体記憶装置
US5166556A (en) * 1991-01-22 1992-11-24 Myson Technology, Inc. Programmable antifuse structure, process, logic cell and architecture for programmable integrated circuits
EP0592078A1 (en) * 1992-09-23 1994-04-13 Actel Corporation Antifuse element and fabrication method
US5426614A (en) * 1994-01-13 1995-06-20 Texas Instruments Incorporated Memory cell with programmable antifuse technology
JPH07263647A (ja) * 1994-02-04 1995-10-13 Canon Inc 電子回路装置
US5468680A (en) * 1994-03-18 1995-11-21 Massachusetts Institute Of Technology Method of making a three-terminal fuse
JP3501416B2 (ja) 1994-04-28 2004-03-02 忠弘 大見 半導体装置
DE69700241T2 (de) 1996-03-01 1999-11-04 Mitsubishi Denki K.K., Tokio/Tokyo Halbleiterspeichergerät, um Fehlfunktion durch Zeilenauswahlleitungsunterbrechung zu vermeiden
EP0953983A3 (en) 1996-03-01 2005-10-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with clamping circuit for preventing malfunction
US6631085B2 (en) * 2000-04-28 2003-10-07 Matrix Semiconductor, Inc. Three-dimensional memory array incorporating serial chain diode stack
US20030062594A1 (en) * 2001-10-01 2003-04-03 Chin-Yang Chen Anti-fuse structure with low on-state resistance and low off-state leakage
US7038248B2 (en) * 2002-02-15 2006-05-02 Sandisk Corporation Diverse band gap energy level semiconductor device
US20040108573A1 (en) * 2002-03-13 2004-06-10 Matrix Semiconductor, Inc. Use in semiconductor devices of dielectric antifuses grown on silicide
US6946719B2 (en) * 2003-12-03 2005-09-20 Matrix Semiconductor, Inc Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
JP4370100B2 (ja) 2003-01-10 2009-11-25 パナソニック株式会社 半導体記憶装置
US6690597B1 (en) * 2003-04-24 2004-02-10 Hewlett-Packard Development Company, L.P. Multi-bit PROM memory cell
EP1714294B1 (en) * 2004-02-10 2016-04-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory
JP4515134B2 (ja) 2004-04-06 2010-07-28 成田国際空港株式会社 航空手荷物管理システム
JP2005045282A (ja) 2004-10-04 2005-02-17 Foundation For Advancement Of International Science 半導体装置
JP5046525B2 (ja) 2005-02-28 2012-10-10 株式会社半導体エネルギー研究所 半導体装置
US8193606B2 (en) * 2005-02-28 2012-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a memory element
US7782650B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7224630B2 (en) * 2005-06-24 2007-05-29 Freescale Semiconductor, Inc. Antifuse circuit
TWI411095B (zh) * 2005-09-29 2013-10-01 Semiconductor Energy Lab 記憶裝置
JP5027470B2 (ja) 2005-09-29 2012-09-19 株式会社半導体エネルギー研究所 記憶装置
JP4908901B2 (ja) 2006-04-11 2012-04-04 ラピスセミコンダクタ株式会社 不揮発性メモリの製造方法
US7759765B2 (en) * 2006-07-07 2010-07-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device mounted with fuse memory
US7499355B2 (en) * 2006-07-31 2009-03-03 Sandisk 3D Llc High bandwidth one time field-programmable memory
US7649798B2 (en) * 2006-08-17 2010-01-19 Broadcom Corporation Memory device using antifuses
CN101523611B (zh) * 2006-10-04 2012-07-04 株式会社半导体能源研究所 半导体器件及其制造方法
KR101481400B1 (ko) * 2006-10-24 2015-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 저장 디바이스를 포함하는 반도체 디바이스와 이를 구동하기 위한 방법
KR101416876B1 (ko) * 2006-11-17 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조방법
US7994607B2 (en) * 2007-02-02 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5525694B2 (ja) 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US7701746B2 (en) * 2007-06-28 2010-04-20 Sandisk 3D, Llc Method of making memory cell with voltage modulated sidewall poly resistor
US7759666B2 (en) * 2007-06-29 2010-07-20 Sandisk 3D Llc 3D R/W cell with reduced reverse leakage
US7872934B2 (en) * 2007-12-14 2011-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for writing data into memory

Also Published As

Publication number Publication date
CN101458966A (zh) 2009-06-17
CN101458966B (zh) 2015-04-01
JP2009164587A (ja) 2009-07-23
US8735885B2 (en) 2014-05-27
TW200937692A (en) 2009-09-01
US20090152549A1 (en) 2009-06-18
TWI478408B (zh) 2015-03-21

Similar Documents

Publication Publication Date Title
JP5371400B2 (ja) メモリ及び半導体装置
JP5268600B2 (ja) 半導体装置及びメモリのデータ書き込み方法
TWI459542B (zh) 半導體裝置
US8698220B2 (en) Semiconductor device having concentration difference of impurity element in semiconductor films
US8854191B2 (en) Semiconductor device and method for operating the same
JP5604567B2 (ja) 半導体装置
US9965713B2 (en) Semiconductor device
KR101389119B1 (ko) 발진회로 및 그것을 구비한 반도체장치
US8609464B2 (en) Method for shielding semiconductor device
CN101097613A (zh) 半导体装置
US8168512B2 (en) Manufacturing method of semiconductor device
US8127998B2 (en) Semiconductor device
CN1930580B (zh) 半导体设备、无线芯片、ic卡、ic标签、应答器、帐单、证券、护照、电子设备、书包和服装
KR101205195B1 (ko) 반도체 장치
JP2008136180A (ja) 発振回路およびそれを備えた半導体装置
JP4836523B2 (ja) 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄ、トランスポンダ、紙幣、有価証券類、パスポート、電子機器、バッグ及び衣類

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111121

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111121

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130731

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130806

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130826

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130910

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130917

R150 Certificate of patent or registration of utility model

Ref document number: 5371400

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees