TWI478408B - 記憶體裝置 - Google Patents

記憶體裝置 Download PDF

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Publication number
TWI478408B
TWI478408B TW097147443A TW97147443A TWI478408B TW I478408 B TWI478408 B TW I478408B TW 097147443 A TW097147443 A TW 097147443A TW 97147443 A TW97147443 A TW 97147443A TW I478408 B TWI478408 B TW I478408B
Authority
TW
Taiwan
Prior art keywords
state
layer
electrode
written
antifuse
Prior art date
Application number
TW097147443A
Other languages
English (en)
Chinese (zh)
Other versions
TW200937692A (en
Inventor
德永肇
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW200937692A publication Critical patent/TW200937692A/zh
Application granted granted Critical
Publication of TWI478408B publication Critical patent/TWI478408B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Read Only Memory (AREA)
TW097147443A 2007-12-14 2008-12-05 記憶體裝置 TWI478408B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007323241 2007-12-14

Publications (2)

Publication Number Publication Date
TW200937692A TW200937692A (en) 2009-09-01
TWI478408B true TWI478408B (zh) 2015-03-21

Family

ID=40752007

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097147443A TWI478408B (zh) 2007-12-14 2008-12-05 記憶體裝置

Country Status (4)

Country Link
US (1) US8735885B2 (enExample)
JP (1) JP5371400B2 (enExample)
CN (1) CN101458966B (enExample)
TW (1) TWI478408B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI830096B (zh) * 2021-07-20 2024-01-21 大陸商立訊電子科技（昆山）有限公司 電子設備

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US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
JP5641840B2 (ja) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
US8519509B2 (en) * 2010-04-16 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9342775B2 (en) * 2011-11-01 2016-05-17 Avery Dennison Corporation Dual mode chip having radio frequency identification and electronic article surveillance capability
CN104463266B (zh) * 2014-10-31 2018-07-10 江苏凯路威电子科技有限公司 Rfid防伪方法及芯片
US10476680B2 (en) * 2016-02-03 2019-11-12 Ememory Technology Inc. Electronic device with self-protection and anti-cloning capabilities and related method
CN106372498B (zh) * 2016-09-05 2020-08-28 新华三技术有限公司 一种软件保护的方法和装置
US10446248B1 (en) 2018-04-23 2019-10-15 Micron Technology, Inc. Non-volatile memory devices and systems with read-only memory features and methods for operating the same
US11049565B2 (en) * 2018-04-23 2021-06-29 Micron Technology, Inc. Non-volatile memory devices and systems with volatile memory features and methods for operating the same

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US20030022420A1 (en) * 2000-04-28 2003-01-30 Bendik Kleveland Three-dimensional memory array incorporating serial chain diode stack

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EP0592078A1 (en) * 1992-09-23 1994-04-13 Actel Corporation Antifuse element and fabrication method
US5426614A (en) * 1994-01-13 1995-06-20 Texas Instruments Incorporated Memory cell with programmable antifuse technology
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US5468680A (en) * 1994-03-18 1995-11-21 Massachusetts Institute Of Technology Method of making a three-terminal fuse
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EP0680087A2 (en) * 1994-04-28 1995-11-02 Canon Kabushiki Kaisha Semiconductor devices utilising silicide reaction for manufacturing adaptable interconnections
US20030022420A1 (en) * 2000-04-28 2003-01-30 Bendik Kleveland Three-dimensional memory array incorporating serial chain diode stack

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI830096B (zh) * 2021-07-20 2024-01-21 大陸商立訊電子科技（昆山）有限公司 電子設備

Also Published As

Publication number Publication date
CN101458966A (zh) 2009-06-17
CN101458966B (zh) 2015-04-01
JP2009164587A (ja) 2009-07-23
US8735885B2 (en) 2014-05-27
TW200937692A (en) 2009-09-01
US20090152549A1 (en) 2009-06-18
JP5371400B2 (ja) 2013-12-18

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